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Simultaneous Charge Carrier Density Mapping of SiC Epilayers and Substrates with Terahertz Time-Domain Spectroscopy
Authors:
Joshua Hennig,
Jens Klier,
Stefan Duran,
Kuei-Shen Hsu,
Jan Beyer,
Christian Roeder,
Franziska C. Beyer,
Nadine Schueler,
Nico Vieweg,
Katja Dutzi,
Georg von Freymann,
Daniel Molter
Abstract:
With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a contactless characterization. In this work, we simultaneously determine the charge carrier density of SiC epilayers and their substrates in a single measurement ov…
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With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a contactless characterization. In this work, we simultaneously determine the charge carrier density of SiC epilayers and their substrates in a single measurement over a wide range of about 8x10^(15)$ cm^(-3) to 4x10^(18) cm^(-3) using time-domain spectroscopy in a reflection geometry. Furthermore, inhomogeneities in the samples are detected by mapping the determined charge carrier densities over the whole wafer. Additional theoretical calculations confirm these results and provide thickness-dependent information on the doping range of 4H-SiC, in which terahertz time-domain spectroscopy is capable of determining the charge carrier density.
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Submitted 17 June, 2025;
originally announced June 2025.
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Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy
Authors:
Joshua Hennig,
Jens Klier,
Stefan Duran,
Kuei-Shen Hsu,
Jan Beyer,
Christian Röder,
Franziska C. Beyer,
Nadine Schüler,
Nico Vieweg,
Katja Dutzi,
Georg von Freymann,
Daniel Molter
Abstract:
Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonst…
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Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model-based approaches to extract resistivity values from terahertz time-domain spectroscopy measurements of silicon in a wide range from about 10$^{-3}$ $Ω$cm to 10$^{2}$ $Ω$cm. One method is an analytical approach and the other is an optimization approach. Four-point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X-Y scanning of the samples to detect inhomogeneities in the doping distribution.
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Submitted 23 January, 2024;
originally announced January 2024.
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Numerical analysis and optimization of a hybrid layer structure for triplet-triplet fusion mechanism in organic light-emitting diodes
Authors:
Jun-Yu Huang,
Hsiao-Chun Hung,
Kung-Chi Hsu,
Chia-Hsun Chen,
Pei-Hsi Lee,
Hung-Yi Lin,
Bo-Yen Lin,
Man-kit Leung,
Tien-Lung Chiu,
Jiun-Haw Lee,
Richard H. Friend,
Yuh-Renn Wu
Abstract:
In this study, we develop a steady state and time-dependent exciton diffusion model including singlet and triplet excitons coupled with a modified Poisson and drift-diffusion solver to explain the mechanism of hyper triplet-triplet fusion (TTF) organic light-emitting diodes (OLEDs). Using this modified simulator, we demonstrate various characteristics of OLEDs, including the J-V curve, internal qu…
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In this study, we develop a steady state and time-dependent exciton diffusion model including singlet and triplet excitons coupled with a modified Poisson and drift-diffusion solver to explain the mechanism of hyper triplet-triplet fusion (TTF) organic light-emitting diodes (OLEDs). Using this modified simulator, we demonstrate various characteristics of OLEDs, including the J-V curve, internal quantum efficiency, transient spectrum, and electric profile. This solver can also be used to explain the mechanism of hyper-TTF-OLEDs and analyze the loss from different exciton mechanisms. Furthermore, we perform additional optimization of hyper-TTF-OLEDs that increases the internal quantum efficiency by approximately 33% (from 29% to 40%).
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Submitted 31 May, 2023;
originally announced May 2023.
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Imaging of plasmonic modes of silver nanoparticles using high-resolution cathodoluminescence spectroscopy
Authors:
Pratik Chaturvedi,
Keng Hsu,
Anil Kumar,
James C. Mabon,
Nicholas Fang
Abstract:
Cathodoluminescence spectroscopy has been performed on silver nanoparticles in a scanning electron microscopy setup. Peaks appearing in the visible range for particles fabricated on silicon substrate are shown to arrive from excitation of out of plane eigenmodes by the electron beam. Monochromatic emission maps have been shown to resolve spatial field variation of resonant plasmon mode on length…
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Cathodoluminescence spectroscopy has been performed on silver nanoparticles in a scanning electron microscopy setup. Peaks appearing in the visible range for particles fabricated on silicon substrate are shown to arrive from excitation of out of plane eigenmodes by the electron beam. Monochromatic emission maps have been shown to resolve spatial field variation of resonant plasmon mode on length scale smaller than 25nm. Finite-difference time-domain numerical simulations are performed for both the cases of light excitation and electron excitation. The results of radiative emission under electron excitation show an excellent agreement with experiments. A complete vectorial description of induced field is given, which complements the information obtained from experiments.
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Submitted 5 June, 2009;
originally announced June 2009.
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Orbit Feedback System for the Storage Ring of SRRC
Authors:
C. H. Kuo,
Jenny Chen,
C. J. Wang,
K. H. Hu,
C. S. Chen,
K. T. Hsu
Abstract:
Orbit feedback system plays crucial roles for the operation of the 3rd generation light source. There are various issues in orbit feedback system should be addressed to achieve ultimate performance. The orbit feedback system in SRRC is upgraded recently to satisfy the requirement of demanding users. Based upon operational experiences of the last few years, new system was designed with more robus…
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Orbit feedback system plays crucial roles for the operation of the 3rd generation light source. There are various issues in orbit feedback system should be addressed to achieve ultimate performance. The orbit feedback system in SRRC is upgraded recently to satisfy the requirement of demanding users. Based upon operational experiences of the last few years, new system was designed with more robustness and flexibility. Performance analysis tools are also developed to monitor system performance. Algorithms for feedback control, data acquisition and analysis are described and measurement is also presented.
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Submitted 9 November, 2001;
originally announced November 2001.
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Data Acquisition and Uesr Interface of Beam Instrumentation System at SRRC
Authors:
Jenny Chen,
C. J. Wang,
C. H. Kuo,
K. H. Hu,
C. S. Chen,
K. T. Hsu
Abstract:
Data acquisition systems for the accelerator complex at SRRC composed various hardware and software components. Beam signals are processed by related processing electronics, and connect to control system by various type of interfaces in data acquisition front-end. These front-end include VME crates, personal computers and instruments bus adapters. Fast Ethernet connected all elements together wi…
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Data acquisition systems for the accelerator complex at SRRC composed various hardware and software components. Beam signals are processed by related processing electronics, and connect to control system by various type of interfaces in data acquisition front-end. These front-end include VME crates, personal computers and instruments bus adapters. Fast Ethernet connected all elements together with control consoles. User interface is running on control console. Real-time data capture; display and alaysis are supported on control console. Analysis tools based on Matlab scripts are adopted. Hardware and software implementation of the system will be presented. User interface supports are also described.
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Submitted 9 November, 2001;
originally announced November 2001.
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Evolution of differentiated expression patterns in digital organisms
Authors:
Charles Ofria,
Christoph Adami,
Travis C. Collier,
Grace K. Hsu
Abstract:
We investigate the evolutionary processes behind the development and optimization of multiple threads of execution in digital organisms using the avida platform, a software package that implements Darwinian evolution on populations of self-replicating computer programs. The system is seeded with a linearly executed ancestor capable only of reproducing its own genome, whereas its underlying langu…
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We investigate the evolutionary processes behind the development and optimization of multiple threads of execution in digital organisms using the avida platform, a software package that implements Darwinian evolution on populations of self-replicating computer programs. The system is seeded with a linearly executed ancestor capable only of reproducing its own genome, whereas its underlying language has the capacity for multiple threads of execution (i.e., simultaneous expression of sections of the genome.) We witness the evolution to multi-threaded organisms and track the development of distinct expression patterns. Additionally, we examine both the evolvability of multi-threaded organisms and the level of thread differentiation as a function of environmental complexity, and find that differentiation is more pronounced in complex environments.
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Submitted 29 February, 2000;
originally announced February 2000.
