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Ultra-thin Epitaxial MgB2 on SiC: Substrate Surface Polarity Dependent Properties
Authors:
Weibing Yang,
Leila Kasaei,
Hussein Hijazi,
Sylvie Rangan,
Yao-wen Yeh,
Raj K. Sah,
Jay R. Paudel,
Ke Chen,
Alexander X. Gray,
Philip Batson,
Leonard C. Feldman,
Xiaoxing Xi
Abstract:
High quality, ultrathin, superconducting films are required for advanced devices such as hot-electron bolometers, superconducting nanowire single photon detectors, and quantum applications. Using Hybrid Physical-Chemical Vapor Deposition (HPCVD), we show that MgB2 films as thin as 4 nm can be fabricated on the carbon terminated 6H-SiC (0001) surface with a superconducting transition temperature ab…
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High quality, ultrathin, superconducting films are required for advanced devices such as hot-electron bolometers, superconducting nanowire single photon detectors, and quantum applications. Using Hybrid Physical-Chemical Vapor Deposition (HPCVD), we show that MgB2 films as thin as 4 nm can be fabricated on the carbon terminated 6H-SiC (0001) surface with a superconducting transition temperature above 33K and a rms roughness of 0.7 nm. Remarkably, the film quality is a function of the SiC surface termination, with the C-terminated surface preferred to the Si-terminated surface. To understand the MgB2 thin film/ SiC substrate interactions giving rise to this difference, we characterized the interfacial structures using Rutherford backscattering spectroscopy/channeling, electron energy loss spectroscopy, and x-ray photoemission spectroscopy. The MgB2/SiC interface structure is complex and different for the two terminations. Both terminations incorporate substantial unintentional oxide layers influencing MgB2 growth and morphology, but with different extent, intermixing and interface chemistry. In this paper, we report measurements of transport, resistivity, and critical superconducting temperature of MgB2/SiC that are different for the two terminations, and link interfacial structure variations to observed differences. The result shows that the C face of SiC is a preferred substrate for the deposition of ultrathin superconducting MgB2 films.
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Submitted 4 January, 2023;
originally announced January 2023.
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Defect engineering of silicon with ion pulses from laser acceleration
Authors:
Walid Redjem,
Ariel J. Amsellem,
Frances I. Allen,
Gabriele Benndorf,
Jianhui Bin,
Stepan Bulanov,
Eric Esarey,
Leonard C. Feldman,
Javier Ferrer Fernandez,
Javier Garcia Lopez,
Laura Geulig,
Cameron R. Geddes,
Hussein Hijazi,
Qing Ji,
Vsevolod Ivanov,
Boubacar Kante,
Anthony Gonsalves,
Jan Meijer,
Kei Nakamura,
Arun Persaud,
Ian Pong,
Lieselotte Obst-Huebl,
Peter A. Seidl,
Jacopo Simoni,
Carl Schroeder
, et al. (5 additional authors not shown)
Abstract:
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that…
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Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.
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Submitted 25 March, 2022;
originally announced March 2022.
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Local ultra-densification of single-walled carbon nanotube films: modeling and experiment
Authors:
Artem K. Grebenko,
Grigorii Drozdov,
Yuriy G. Gladush,
Igor Ostanin,
Sergey S. Zhukov,
Aleksandr V. Melentyev,
Eldar M. Khabushev,
Alexey P. Tsapenko,
Dmitry V. Krasnikov,
Boris Afinogenov,
Alexei G. Temiryazev,
Viacheslav V. Dremov,
Traian Dumitricã,
Mengjun Li,
Hussein Hijazi,
Vitaly Podzorov,
Leonard C. Feldman,
Albert G. Nasibulin
Abstract:
Fabrication of nanostructured metasurfaces poses a significant technological and fundamental challenge. Despite developing novel systems that support reversible elongation and distortion, their nanoscale patterning and control of optical properties remain an open problem. Herein we report the atomic force microscope lithography (AFML) application for nanoscale patterning of single-walled carbon na…
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Fabrication of nanostructured metasurfaces poses a significant technological and fundamental challenge. Despite developing novel systems that support reversible elongation and distortion, their nanoscale patterning and control of optical properties remain an open problem. Herein we report the atomic force microscope lithography (AFML) application for nanoscale patterning of single-walled carbon nanotube films and the associated reflection coefficient tuning. We present models of bundling reorganization, formed-pattern stability, and energy distribution describing mechanical behavior with mesoscopic distinct element method (MDEM). All observed and calculated phenomena support each other and present a platform for developing AFML patterned optical devices using meshy nanostructured matter.
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Submitted 12 March, 2022;
originally announced March 2022.
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The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces
Authors:
V. Bruevich,
L. Kasaei,
S. Rangan,
H. Hijazi,
Z. Zhang,
T. Emge,
E. Andrei,
R. A. Bartynski,
L. C. Feldman,
V. Podzorov
Abstract:
Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs bas…
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Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs based on epitaxial, single crystalline thin films of cesium lead bromide (CsPbBr3). An improved vapor-phase epitaxy has allowed growing truly large-area, atomically flat films of this perovskite with excellent structural and surface properties. FETs based on these CsPbBr3 films exhibit textbook transistor characteristics, with a very low hysteresis and high intrinsic charge carrier mobility. Availability of such high-performance devices has allowed the study of Hall effect in perovskite FETs for the first time. Our magneto-transport measurements show that the charge carrier mobility of CsPbBr3 FETs increases on cooling, from ~ 30 cm2V-1s-1 at room temperature, to ~ 250 cm2V-1s-1 at 50 K, exhibiting a band transport mostly limited by phonon scattering. The epitaxial growth and FET fabrication methodologies described here can be naturally extended to other perovskites, including the hybrid ones, thus representing a technological leap forward, overcoming the performance bottleneck in research on perovskite FETs.
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Submitted 24 December, 2021;
originally announced December 2021.
