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A Narrowband Spintronic Terahertz Emitter based on Magnetoelastic Heterostructures
Authors:
Shihao Zhuang,
Peter B. Meisenheimer,
John T. Heron,
Jia-Mian Hu
Abstract:
Narrowband terahertz (THz) radiation is crucial for high-resolution spectral identification, but a narrowband THz source driven by femtosecond (fs) laser has remained scarce. Here, it is computationally predicted that a metal/dielectric/magnetoelastic heterostructure enables converting a fs laser pulse into a multi-cycle THz pulse with a narrow linewidth down to ~1.5 GHz, which is in contrast with…
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Narrowband terahertz (THz) radiation is crucial for high-resolution spectral identification, but a narrowband THz source driven by femtosecond (fs) laser has remained scarce. Here, it is computationally predicted that a metal/dielectric/magnetoelastic heterostructure enables converting a fs laser pulse into a multi-cycle THz pulse with a narrow linewidth down to ~1.5 GHz, which is in contrast with the single-cycle, broadband THz pulse from the existing fs-laser-excited emitters. It is shown that such narrowband THz pulse originates from the excitation and long-distance transport of THz spin waves in the magnetoelastic film, which can be enabled by a short strain pulse obtained from fs laser irradiation of the metal film when the thicknesses of the metal and magnetoelastic films both fall into a specific range. These results therefore reveal an approach to achieving optical generation of narrowband THz pulse based on heterostructure design, which also has implications in the design of THz magnonic devices.
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Submitted 1 October, 2021; v1 submitted 1 May, 2020;
originally announced May 2020.
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Clocked Magnetostriction-Assisted Spintronic Device Design and Simulation
Authors:
Rouhollah Mousavi Iraei,
Nickvash Kani,
Sourav Dutta,
Dmitri E. Nikonov,
Sasikanth Manipatruni,
Ian A. Young,
John T. Heron,
Azad Naeemi
Abstract:
We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low voltage operation, non-reciprocity, n…
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We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low voltage operation, non-reciprocity, non-volatility, cascadability, and thermal reliability of the original ASL device. Moreover, by utilizing the deterministic switching of a magnet from the saddle point of the energy profile, the device is more efficient in terms of energy and delay and is robust to thermal fluctuations. The results of simulations show that compared to ASL devices, the proposed device achieves 21x shorter delay and 27x lower energy dissipation per bit for a 32-bit arithmetic-logic unit (ALU).
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Submitted 22 November, 2017;
originally announced November 2017.
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High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy
Authors:
Mark W. Tate,
Prafull Purohit,
Darol Chamberlain,
Kayla X. Nguyen,
Robert M. Hovden,
Celesta S. Chang,
Pratiti Deb,
Emrah Turgut,
John T. Heron,
Darrell G. Schlom,
Daniel C. Ralph,
Gregory D. Fuchs,
Katherine S. Shanks,
Hugh T. Philipp,
David A. Muller,
Sol M. Gruner
Abstract:
We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel ci…
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We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition (DAQ) system, and preliminary results from experiments with 80 to 200 keV electron beams.
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Submitted 11 November, 2015;
originally announced November 2015.
