Single-photon light emitting diodes based on pre-selected quantum dots using a deterministic lithography technique
Authors:
Marc Sartison,
Simon Seyfferle,
Sascha Kolatschek,
Stefan Hepp,
Michael Jetter,
Peter Michler,
Simone Luca Portalupi
Abstract:
In the present study, we developed a fabrication process of an electrically driven single-photon LED based on InP QDs emitting in the red spectral range, the wavelength of interest coinciding with the high efficiency window of Si APDs. A deterministic lithography technique allowed for the pre-selection of a suitable QD, here exclusively operated under electrical carrier injection. The final device…
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In the present study, we developed a fabrication process of an electrically driven single-photon LED based on InP QDs emitting in the red spectral range, the wavelength of interest coinciding with the high efficiency window of Si APDs. A deterministic lithography technique allowed for the pre-selection of a suitable QD, here exclusively operated under electrical carrier injection. The final device was characterized under micro-electroluminescence in direct current, as well as in pulsed excitation mode. In particular, under pulsed excitation of one device, single-photon emission of a spectral line, identified as an exciton, has been observed with $g^{(2)}_\mathrm{raw}(0)=0.42\pm0.02$, where the non-zero $g^{(2)}$-value is mainly caused by background contribution in the spectrum and re-excitation processes due to the electrical pulse length. The obtained results constitute an important step forward in the fabrication of electrically driven single-photon sources, where deterministic lithography techniques can be used to sensibly improve the device performances. In principle, the developed process can be extended to any desired emitter wavelength above $600\,\mathrm{nm}$ up to the telecom bands.
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Submitted 4 February, 2019;
originally announced February 2019.
Fully on-chip single-photon Hanbury-Brown and Twiss experiment on a monolithic semiconductor-superconductor platform
Authors:
Mario Schwartz,
Ekkehart Schmidt,
Ulrich Rengstl,
Florian Hornung,
Stefan Hepp,
Simone L. Portalupi,
Konstantin Ilin,
Michael Jetter,
Michael Siegel,
Peter Michler
Abstract:
Photonic quantum technologies such as quantum cryptography, photonic quantum metrology, photonic quantum simulators and computers will largely benefit from highly scalable and small footprint quantum photonic circuits. To perform fully on-chip quantum photonic operations, three basic building blocks are required: single-photon sources, photonic circuits and single-photon detectors. Highly integrat…
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Photonic quantum technologies such as quantum cryptography, photonic quantum metrology, photonic quantum simulators and computers will largely benefit from highly scalable and small footprint quantum photonic circuits. To perform fully on-chip quantum photonic operations, three basic building blocks are required: single-photon sources, photonic circuits and single-photon detectors. Highly integrated quantum photonic chips on silicon and related platforms have been demonstrated incorporating only one or two of these basic building blocks. Previous implementations of all three components were mainly limited by laser stray light, making temporal filtering necessary or required complex manipulation to transfer all components onto one chip. So far, a monolithic, simultaneous implementation of all elements demonstrating single-photon operation remains elusive. Here, we present a fully-integrated Hanbury-Brown and Twiss setup on a micron-sized footprint, consisting of a GaAs waveguide embedding quantum dots as single-photon sources, a waveguide beamsplitter and two superconducting nanowire single-photon detectors. This enables a second-order correlation measurement at the single-photon level under both continuous-wave and pulsed resonant excitation.
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Submitted 11 June, 2018;
originally announced June 2018.
