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Using metal-organic frameworks to confine liquid samples for nanoscale NV-NMR
Authors:
Kristina S. Liu,
Xiaoxin Ma,
Roberto Rizzato,
Anna-Lisa Semrau,
Alex Henning,
Ian D. Sharp,
Roland A. Fischer,
Dominik. B. Bucher
Abstract:
Atomic-scale magnetic field sensors based on nitrogen vacancy (NV) defects in diamonds are an exciting platform for nanoscale nuclear magnetic resonance (NMR) spectroscopy. The detection of NMR signals from a few zeptoliters to single molecules or even single nuclear spins has been demonstrated using NV-centers close to the diamond surface. However, fast molecular diffusion of sample molecules in…
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Atomic-scale magnetic field sensors based on nitrogen vacancy (NV) defects in diamonds are an exciting platform for nanoscale nuclear magnetic resonance (NMR) spectroscopy. The detection of NMR signals from a few zeptoliters to single molecules or even single nuclear spins has been demonstrated using NV-centers close to the diamond surface. However, fast molecular diffusion of sample molecules in and out of nanoscale detection volumes impedes their detection and limits current experiments to solid-state or highly viscous samples. Here, we show that restricting diffusion by confinement enables nanoscale NMR spectroscopy of liquid samples. Our approach uses metal-organic frameworks (MOF) with angstrom-sized pores on a diamond chip to trap sample molecules near the NV-centers. This enables the detection of NMR signals from a liquid sample, which would not be detectable without confinement. These results set the route for nanoscale liquid-phase NMR with high spectral resolution.
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Submitted 15 September, 2022; v1 submitted 12 September, 2022;
originally announced September 2022.
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Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina
Authors:
Alex Henning,
Johannes D. Bartl,
Lukas Wolz,
Maximilian Christis,
Felix Rauh,
Michele Bissolo,
Theresa Grünleitner,
Johanna Eichhorn,
Patrick Zeller,
Matteo Amati,
Luca Gregoratti,
Jonathan J. Finley,
Bernhard Rieger,
Martin Stutzmann,
Ian D. Sharp
Abstract:
Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale. While ALD allows the synthesis of conformal films at low temperature with utmost control over the thickness, atomically-defined closed coatings and surface modi…
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Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale. While ALD allows the synthesis of conformal films at low temperature with utmost control over the thickness, atomically-defined closed coatings and surface modifications are still extremely difficult to achieve because of three-dimensional growth during nucleation. Here, we present a route towards sub-nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon (Si) substrates for the spatial control of the surface charge density and interface energetics. We use trimethylaluminum (TMA) in combination with remote hydrogen plasma instead of a gas-phase oxidant for the transformation of silicon oxide into alumina (AlOx). During the initial ALD cycles, TMA reacts with the surface oxide (SiO2) on silicon until there is a saturation of bindings sites, after which the oxygen from the underlying surface oxide is consumed, thereby transforming the silicon oxide into Si capped with AlOx. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which we exploit to create sub-nanometer thin and continuous AlOx layers deposited in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing step heights as small as 0.3 nm and surface potential steps in excess of 0.4 V. In addition, the introduction of fixed negative charges of $9 \times 10^{12}$ cm$^{-2}$ enables modulation of the surface band bending, which is relevant to the field-effect passivation of Si and low-impedance charge transfer across contact interfaces.
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Submitted 24 September, 2022; v1 submitted 29 October, 2021;
originally announced November 2021.
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Scalable transparent conductive thin films with electronically passive interfaces for direct chemical vapor deposition of 2D materials
Authors:
Theresa Grünleitner,
Alex Henning,
Michele Bissolo,
Armin Kleibert,
Carlos A. F. Vaz,
Andreas V. Stier,
Jonathan J. Finley,
Ian D. Sharp
Abstract:
We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile interfacial charge transport. This structure, which comprises an evaporated nanocrystalline carbon (nc-C) film beneath an atomic layer deposited alumina (ALD AlOx) layer, is thermally stable and allows direct chemical vapo…
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We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile interfacial charge transport. This structure, which comprises an evaporated nanocrystalline carbon (nc-C) film beneath an atomic layer deposited alumina (ALD AlOx) layer, is thermally stable and allows direct chemical vapor deposition (CVD) of 2D materials onto the surface. When the nc-C/AlOx is deposited onto a 270 nm SiO2 layer on Si, strong optical contrast for monolayer flakes is retained. Raman spectroscopy reveals good crystal quality for MoS2 and we observe a ten-fold photoluminescence intensity enhancement compared to flakes on conventional Si/SiO2. Tunneling across the ultrathin AlOx enables interfacial charge injection, which we demonstrate by artifact-free scanning electron microscopy and photoemission electron microscopy. Thus, this combination of scalable fabrication and electronic conductivity across a weakly interacting 2D/3D interface opens up new application and characterization opportunities for 2D materials.
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Submitted 15 October, 2021;
originally announced October 2021.
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Surface NMR using quantum sensors in diamond
Authors:
Kristina S. Liu,
Alex Henning,
Markus W. Heindl,
Robin D. Allert,
Johannes D. Bartl,
Ian D. Sharp,
Roberto Rizzato,
Dominik B. Bucher
Abstract:
Characterization of the molecular properties of surfaces under ambient or chemically reactive conditions is a fundamental scientific challenge. Moreover, many traditional analytical techniques used for probing surfaces often lack dynamic or molecular selectivity, which limits their applicability for mechanistic and kinetic studies under realistic chemical conditions. Nuclear magnetic resonance spe…
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Characterization of the molecular properties of surfaces under ambient or chemically reactive conditions is a fundamental scientific challenge. Moreover, many traditional analytical techniques used for probing surfaces often lack dynamic or molecular selectivity, which limits their applicability for mechanistic and kinetic studies under realistic chemical conditions. Nuclear magnetic resonance spectroscopy (NMR) is a widely used technique and would be ideal for probing interfaces due to the molecular information it provides noninvasively. However, it lacks the sensitivity to probe the small number of spins at surfaces. Here, we use nitrogen vacancy (NV) centers in diamond as quantum sensors to optically detect nuclear magnetic resonance signals from chemically modified aluminum oxide surfaces, prepared with atomic layer deposition (ALD). With the surface NV-NMR technique, we are able to monitor in real-time the formation kinetics of a self assembled monolayer (SAM) based on phosphonate anchoring chemistry to the surface. This demonstrates the capability of quantum sensors as a new surface-sensitive tool with sub-monolayer sensitivity for in-situ NMR analysis with the additional advantage of a strongly reduced technical complexity.
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Submitted 29 March, 2021;
originally announced March 2021.
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Low frequency fringe pattern analysis via a Fourier transform method
Authors:
Andrew John Henning,
Dawei Tang,
Xiangqian,
Jiang
Abstract:
The analysis of signals created by a variety of instruments involves calculating the phase of a sinusoidal type signal. One widely used method to extract this information is through the use of Fourier transforms, but it is known that significant errors can arise when a low number of cycles of a sinusoid are present in the signal. In the following, we examine the case where the fringe pattern of in…
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The analysis of signals created by a variety of instruments involves calculating the phase of a sinusoidal type signal. One widely used method to extract this information is through the use of Fourier transforms, but it is known that significant errors can arise when a low number of cycles of a sinusoid are present in the signal. In the following, we examine the case where the fringe pattern of interest only contains a few cycles of a sinusoid, looking at the adjustments that need to be made to the previous method in order to allow it to be used successfully, the causes of errors that arise, and the accuracy that can be expected to be obtained.
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Submitted 1 November, 2018; v1 submitted 4 October, 2018;
originally announced October 2018.
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Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions
Authors:
Alex Henning,
Vinod K. Sangwan,
Hadallia Bergeron,
Itamar Balla,
Zhiyuan Sun,
Mark C. Hersam,
Lincoln J. Lauhon
Abstract:
Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Towards that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunc…
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Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Towards that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS2 isotype heterojunctions with p-Si/MoS2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument limited response time of 1 us, which is 10 times faster than previously reported response times for planar Si/MoS2 devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors.
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Submitted 24 May, 2018;
originally announced May 2018.
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Self-Aligned van der Waals Heterojunction Diodes and Transistors
Authors:
Vinod K. Sangwan,
Megan E. Beck,
Alex Henning,
Jiajia Luo,
Hadallia Bergeron,
Junmo Kang,
Itamar Balla,
Hadass Inbar,
Lincoln J. Lauhon,
Mark C. Hersam
Abstract:
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojun…
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A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of anti-ambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated anti-ambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with sub-diffraction channel lengths in the range of 150 nm to 800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step towards the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.
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Submitted 3 February, 2018;
originally announced February 2018.
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Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)
Authors:
Eran Edri,
Saar Kirmayer,
Alex Henning,
Sabyasachi Mukhopadhyay,
Konstantin Gartsman,
Yossi Rosenwaks,
Gary Hodes,
David Cahen
Abstract:
CH3NH3PbI3-based solar cells were characterized with electron beam-induced current (EBIC), and compared to CH3NH3PbI3-xClx ones. A spatial map of charge separation efficiency in working cells shows p-i-n structures for both thin film cells. Effective diffusion lengths, LD, (from EBIC profile) show that holes are extracted significantly more efficiently than electrons in CH3NH3PbI3, explaining why…
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CH3NH3PbI3-based solar cells were characterized with electron beam-induced current (EBIC), and compared to CH3NH3PbI3-xClx ones. A spatial map of charge separation efficiency in working cells shows p-i-n structures for both thin film cells. Effective diffusion lengths, LD, (from EBIC profile) show that holes are extracted significantly more efficiently than electrons in CH3NH3PbI3, explaining why CH3NH3PbI3-based cells require mesoporous electron conductors, while CH3NH3PbI3-xClx ones, where LD values are comparable for both charge types, do not.
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Submitted 12 January, 2014;
originally announced January 2014.
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Using dynamical barriers to control the transmission of light through slowly-varying photonic crystals
Authors:
A. J. Henning,
T. M. Fromhold,
P. B. Wilkinson
Abstract:
We use semiclassical Hamiltonian optics to investigate the propagation of light rays through two-dimensional photonic crystals when slow spatial modulation of the lattice parameters induces mixed stable-chaotic ray dynamics. This modulation changes both the shape and frequency range of the allowed frequency bands, thereby bending the resulting semiclassical ray trajectories and confining them with…
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We use semiclassical Hamiltonian optics to investigate the propagation of light rays through two-dimensional photonic crystals when slow spatial modulation of the lattice parameters induces mixed stable-chaotic ray dynamics. This modulation changes both the shape and frequency range of the allowed frequency bands, thereby bending the resulting semiclassical ray trajectories and confining them within particular regions of the crystal. The curved boundaries of these regions, combined with the bending of the orbits themselves, creates a hierarchy of stable and unstable chaotic trajectories in phase space. For certain lattice parameters and electromagnetic wave frequencies, islands of stable orbits act as a dynamical barrier, which separates the chaotic trajectories into two distinct regions of the crystal, thereby preventing the rays propagating through the structure. We show that changing the frequency of the light strongly affects the distribution of stable and unstable orbits in both real and phase space. This switches the dynamical barriers on and off and thus modulates the transmission of rays through the crystal. We propose microwave analogues of the photonic crystals as a route to the experimental study of the transport effects that we predict.
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Submitted 17 December, 2010; v1 submitted 2 September, 2010;
originally announced September 2010.
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Label-free electrical quantification of the dielectrophoretic response of DNA
Authors:
Anja Henning,
Joerg Henkel,
Frank F Bier,
Ralph Hoelzel
Abstract:
A purely electrical sensing scheme is presented that determines the concentration of macromolecules in solution by measuring the capacitance between planar microelectrodes. Concentrations of DNA in the ng/mL range have been used in samples of 1 microL volume. The method has been applied to the characterisation of the dielectrophoretic response of DNA without the need for any chemical modificatio…
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A purely electrical sensing scheme is presented that determines the concentration of macromolecules in solution by measuring the capacitance between planar microelectrodes. Concentrations of DNA in the ng/mL range have been used in samples of 1 microL volume. The method has been applied to the characterisation of the dielectrophoretic response of DNA without the need for any chemical modifications. The influence of electrical parameters like duty cycle, voltage and frequency has been investigated. The results are in good agreement with data from dielectrophoretic studies on fluorescently labelled DNA. Extension of the method down to the single molecule level appears feasible.
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Submitted 19 January, 2009;
originally announced January 2009.
