Hybrid integrated near UV lasers using the deep-UV Al2O3 platform
Authors:
C. A. A. Franken,
W. A. P. M. Hendriks,
L. V. Winkler,
M. Dijkstra,
A. R. do Nascimento Jr,
A. van Rees,
M. R. S. Mardani,
R. Dekker,
J. van Kerkhof,
P. J. M. van der Slot,
S. M. García-Blanco,
K. -J. Boller
Abstract:
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable…
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Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
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Submitted 22 February, 2023;
originally announced February 2023.
