Showing 1–6 of 6 results for author: Hatsui, T

Single-Shot 3D Diffractive Imaging of Core-Shell Nanoparticles with Elemental Specificity

Authors: Alan Pryor Jr, Arjun Rana, Rui Xu, Jose A. Rodriguez, Yongsoo Yang, Marcus Gallagher-Jones, Huaidong Jiang, Jaehyun Park, Sunam Kim, Sangsoo Kim, Daewong Nam, Yu Yue, Jiadong Fan, Zhibin Sun, Bosheng Zhang, Dennis F. Gardner, Carlos Sato Baraldi Dias, Yasumasa Joti, Takaki Hatsui, Takashi Kameshima, Yuichi Inubushi, Kensuke Tono, Jim Yang Lee, Makina Yabashi, Changyong Song , et al. (4 additional authors not shown)

Abstract: We report 3D coherent diffractive imaging of Au/Pd core-shell nanoparticles with 6 nm resolution on 5-6 femtosecond timescales. We measured single-shot diffraction patterns of core-shell nanoparticles using very intense and short x-ray free electron laser pulses. By taking advantage of the curvature of the Ewald sphere and the symmetry of the nanoparticle, we reconstructed the 3D electron density… ▽ More We report 3D coherent diffractive imaging of Au/Pd core-shell nanoparticles with 6 nm resolution on 5-6 femtosecond timescales. We measured single-shot diffraction patterns of core-shell nanoparticles using very intense and short x-ray free electron laser pulses. By taking advantage of the curvature of the Ewald sphere and the symmetry of the nanoparticle, we reconstructed the 3D electron density of 34 core-shell structures from single-shot diffraction patterns. We determined the size of the Au core and the thickness of the Pd shell to be 65.0 +/- 1.0 nm and 4.0 +/- 0.5 nm, respectively, and identified the 3D elemental distribution inside the nanoparticles with an accuracy better than 2%. We anticipate this method can be used for quantitative 3D imaging of symmetrical nanostructures and virus particles. △ Less

Submitted 18 February, 2017; originally announced February 2017.

Comments: 14 pages, 4 figures

Compensation for TID Damage in SOI Pixel Devices

Authors: Naoshi Tobita, Shunsuke Honda, Kazuhiko Hara, Wataru Aoyagi, Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi, Takaki Hatsui, Togo Kudo, Kazuo Kobayashi

Abstract: We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath th… ▽ More We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath the BOX (Buried OXide) layer - in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by Co gamma-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100~Gy to 2~MGy. △ Less

Submitted 21 July, 2015; originally announced July 2015.

X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement

Authors: Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai, Marie Mochizuki, Masao Okihara, Takaki Hatsui, Kazuhiko Hara, Yasuo Arai

Abstract: X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the rad… ▽ More X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement. △ Less

Submitted 29 June, 2015; originally announced June 2015.

Comments: Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03

Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor

Authors: Takeshi G. Tsuru, Hideaki Matsumura, Ayaki Takeda, Takaaki Tanaka, Shinya Nakashima, Yasuo Arai, Koji Mori, Ryota Takenaka, Yusuke Nishioka, Takayoshi Kohmura, Takaki Hatsui, Takashi Kameshima, Kyosuke Ozaki, Yoshiki Kohmura, Tatsuya Wagai, Dai Takei, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Hiroki Kamehama, Sumeet Shrestha

Abstract: We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A f… ▽ More We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$α$ and K$β$. Moreover, we produced a fully depleted layer with a thickness of $500~{\rm μm}$. The event-driven readout mode has already been successfully demonstrated. △ Less

Submitted 20 August, 2014; originally announced August 2014.

Comments: 7pages, 12figures, SPIE Astronomical Telescopes and Instrumentation 2014, Montreal, Quebec, Canada. appears as Proc. SPIE 9147, Space Telescopes and Instrumentation 2014: Ultraviolet to Gamma Ray

Single-shot 3D structure determination of nanocrystals with femtosecond X-ray free electron laser pulses

Authors: Rui Xu, Huaidong Jiang, Changyong Song, Jose A. Rodriguez, Zhifeng Huang, Chien-Chun Chen, Daewoong Nam, Jaehyun Park, Marcus Gallagher-Jones, Sangsoo Kim, Sunam Kim, Akihiro Suzuki, Yuki Takayama, Tomotaka Oroguchi, Yukio Takahashi, Jiadong Fan, Yunfei Zou, Takaki Hatsui, Yuichi Inubushi, Takashi Kameshima, Koji Yonekura, Kensuke Tono, Tadashi Togashi, Takahiro Sato, Masaki Yamamoto , et al. (4 additional authors not shown)

Abstract: Coherent diffraction imaging (CDI) using synchrotron radiation, X-ray free electron lasers (X-FELs), high harmonic generation, soft X-ray lasers, and optical lasers has found broad applications across several disciplines. An active research direction in CDI is to determine the structure of single particles with intense, femtosecond X-FEL pulses based on diffraction-before-destruction scheme. Howev… ▽ More Coherent diffraction imaging (CDI) using synchrotron radiation, X-ray free electron lasers (X-FELs), high harmonic generation, soft X-ray lasers, and optical lasers has found broad applications across several disciplines. An active research direction in CDI is to determine the structure of single particles with intense, femtosecond X-FEL pulses based on diffraction-before-destruction scheme. However, single-shot 3D structure determination has not been experimentally realized yet. Here we report the first experimental demonstration of single-shot 3D structure determination of individual nanocrystals using ~10 femtosecond X-FEL pulses. Coherent diffraction patterns are collected from high-index-faceted nanocrystals, each struck by a single X-FEL pulse. Taking advantage of the symmetry of the nanocrystal, we reconstruct the 3D structure of each nanocrystal from a single-shot diffraction pattern at ~5.5 nm resolution. As symmetry exists in many nanocrystals and virus particles, this method can be applied to 3D structure studies of such particles at nanometer resolution on femtosecond time scales. △ Less

Submitted 31 October, 2013; originally announced October 2013.

Comments: 18 pages, 4 figures

Deep inner-shell multiphoton ionization by intense x-ray free-electron laser pulses

Authors: H. Fukuzawa, S. -K. Son, K. Motomura, S. Mondal, K. Nagaya, S. Wada, X. -J. Liu, R. Feifel, T. Tachibana, Y. Ito, M. Kimura, T. Sakai, K. Matsunami, H. Hayashita, J. Kajikawa, P. Johnsson, M. Siano, E. Kukk, B. Rudek, B. Erk, L. Foucar, E. Robert, C. Miron, K. Tono, Y. Inubushi , et al. (5 additional authors not shown)

Abstract: We have investigated multiphoton multiple ionization dynamics of argon and xenon atoms using a new x-ray free electron laser (XFEL) facility, SPring-8 Angstrom Compact free electron LAser (SACLA) in Japan, and identified that highly charged Xe ions with the charge state up to +26 are produced predominantly via four-photon absorption as well as highly charged Ar ions with the charge state up to +10… ▽ More We have investigated multiphoton multiple ionization dynamics of argon and xenon atoms using a new x-ray free electron laser (XFEL) facility, SPring-8 Angstrom Compact free electron LAser (SACLA) in Japan, and identified that highly charged Xe ions with the charge state up to +26 are produced predominantly via four-photon absorption as well as highly charged Ar ions with the charge state up to +10 are produced via two-photon absorption at a photon energy of 5.5 keV. The absolute fluence of the XFEL pulse, needed for comparison between theory and experiment, has been determined using two-photon processes in the argon atom with the help of benchmark ab initio calculations. Our experimental results, in combination with a newly developed theoretical model for heavy atoms, demonstrate the occurrence of multiphoton absorption involving deep inner shells. △ Less

Submitted 2 October, 2012; originally announced October 2012.

Comments: 5 pages, 5 figures