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Bright single photon sources in lateral silicon carbide light emitting diodes
Authors:
Matthias Widmann,
Matthias Niethammer,
Takahiro Makino,
Torsten Rendler,
Stefan Lasse,
Takeshi Ohshima,
Jawad Ul Hassan,
Nguyen Tien Son,
Sang-Yun Lee,
Jörg Wrachtrup
Abstract:
Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine…
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Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.
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Submitted 3 July, 2020;
originally announced July 2020.
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Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
Authors:
Daniil M. Lukin,
Alexander D. White,
Rahul Trivedi,
Melissa A. Guidry,
Naoya Morioka,
Charles Babin,
Öney O. Soykal,
Jawad Ul Hassan,
Nguyen Tien Son,
Takeshi Ohshima,
Praful K. Vasireddy,
Mamdouh H. Nasr,
Shuo Sun,
Jean-Phillipe W. MacLean,
Constantin Dory,
Emilio A. Nanni,
Jörg Wrachtrup,
Florian Kaiser,
Jelena Vučković
Abstract:
The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose t…
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The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.
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Submitted 27 July, 2020; v1 submitted 27 March, 2020;
originally announced March 2020.
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The Peculiar Size and Temperature Dependence of Water Diffusion in Carbon Nanotubes studied with 2D NMR Diffusion-Relaxation D-T2eff Spectroscopy
Authors:
L. Gkoura,
G. Diamantopoulos,
M. Fardis,
D. Homouz,
S. Alhassan,
M. Beazi-Katsioti,
M. Karagianni,
A. Anastasiou,
G. Romanos,
J. Hassan,
G. Papavassiliou
Abstract:
It is well known that water inside hydrophobic nano-channels diffuses faster than bulk water. Recent theoretical studies have shown that this enhancement depends on the size of the hydrophobic nanochannels. However, experimental evidence of this dependence is lacking. Here, by combining two-dimensional Nuclear Magnetic Resonance (NMR) diffusion-relaxation D-T2eff spectroscopy in the stray field of…
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It is well known that water inside hydrophobic nano-channels diffuses faster than bulk water. Recent theoretical studies have shown that this enhancement depends on the size of the hydrophobic nanochannels. However, experimental evidence of this dependence is lacking. Here, by combining two-dimensional Nuclear Magnetic Resonance (NMR) diffusion-relaxation D-T2eff spectroscopy in the stray field of a superconducting magnet, and Molecular Dynamics (MD) simulations, we analyze the size dependence of water dynamics inside carbon nanotubes (CNTs) of different diameters (1.1 nm to 6.0 nm), in the temperature range of 265K to 305K. Depending on the CNTs diameter, the nanotube water is shown to resolve in two or more tubular components acquiring different self-diffusion coefficients. Most notable, a favourable CNTs diameter range 3.0-4.5 nm is experimentally verified for the first time, in which water molecule dynamics at the centre of the CNTs exhibit distinctly non-Arrhenius behaviour, characterized by ultrafast diffusion and extraordinary fragility, a result of significant importance in the efforts to understand water behaviour in hydrophobic nanochannels.
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Submitted 21 January, 2020; v1 submitted 19 November, 2019;
originally announced November 2019.
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Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
Authors:
Matthias Niethammer,
Matthias Widmann,
Torsten Rendler,
Naoya Morioka,
Yu-Chen Chen,
Rainer Stöhr,
Jawad Ul Hassan,
Shinobu Onoda,
Takeshi Ohshima,
Sang-Yun Lee,
Amlan Mukherjee,
Junichi Isoya,
Nguyen Tien Son,
Jörg Wrachtrup
Abstract:
Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limite…
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Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices.
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Submitted 28 March, 2019;
originally announced March 2019.
