Showing 1–7 of 7 results for author: Hartsuiker, A

Observation of sub-Bragg diffraction of waves in crystals

Authors: Simon R. Huisman, Rajesh V. Nair, Alex Hartsuiker, Léon A. Woldering, Allard P. Mosk, Willem L. Vos

Abstract: We investigate the diffraction conditions and associated formation of stopgaps for waves in crystals with different Bravais lattices. We identify a prominent stopgap in high-symmetry directions that occurs at a frequency below the ubiquitous first-order Bragg condition. This sub-Bragg diffraction condition is demonstrated by reflectance spectroscopy on two-dimensional photonic crystals with a cent… ▽ More We investigate the diffraction conditions and associated formation of stopgaps for waves in crystals with different Bravais lattices. We identify a prominent stopgap in high-symmetry directions that occurs at a frequency below the ubiquitous first-order Bragg condition. This sub-Bragg diffraction condition is demonstrated by reflectance spectroscopy on two-dimensional photonic crystals with a centred rectangular lattice, revealing prominent diffraction peaks for both the sub-Bragg and first-order Bragg condition. These results have implications for wave propagation in 2 of the 5 two-dimensional Bravais lattices and 7 out of 14 three-dimensional Bravais lattices, such as centred rectangular, triangular, hexagonal and body-centred cubic. △ Less

Submitted 15 December, 2011; v1 submitted 15 August, 2011; originally announced August 2011.

Journal ref: Phys. Rev. Lett. 108, 083901 (2012)

Ultimate fast optical switching of a planar microcavity in the telecom wavelength range

Authors: Georgios Ctistis, Emre Yüce, Alex Hartsuiker, Julien Claudon, Maela Bazin, Jean-Michel Gérard, Willem L. Vos

Abstract: We have studied a GaAs-AlAs planar microcavity with a resonance near 1300 nm in the telecom range by ultrafast pump-probe reflectivity. By the judicious choice of pump frequency, we observe a ultimate fast and reversible decrease of the resonance frequency by more than half a linewidth due to the instantaneous electronic Kerr effect. The switch-on and switch-off? of the cavity is only limited by t… ▽ More We have studied a GaAs-AlAs planar microcavity with a resonance near 1300 nm in the telecom range by ultrafast pump-probe reflectivity. By the judicious choice of pump frequency, we observe a ultimate fast and reversible decrease of the resonance frequency by more than half a linewidth due to the instantaneous electronic Kerr effect. The switch-on and switch-off? of the cavity is only limited by the cavity storage time of ?tcav = 0.3ps and not by intrinsic material parameters. Our results pave the way to supra-THz switching rates for on-chip data modulation and real-time cavity quantum electrodynamics. △ Less

Submitted 30 March, 2011; v1 submitted 16 February, 2011; originally announced February 2011.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 98, 161114 (2011)

Optical characterization and selective addressing of the resonant modes of a micropillar cavity with a white light beam

Authors: Georgios Ctistis, Alex Hartsuiker, Edwin van der Pol, Julien Claudon, Willem L. Vos, Jean-Michel Gérard

Abstract: We have performed white-light reflectivity measurements on GaAs/AlAs micropillar cavities with diameters ranging from 1 μm up to 20 μm. We are able to resolve the spatial field distribution of each cavity mode in real space by scanning a small-sized beam across the top facet of each micropillar. We spectrally resolve distinct transverse optical cavity modes in reflectivity. Using this procedure we… ▽ More We have performed white-light reflectivity measurements on GaAs/AlAs micropillar cavities with diameters ranging from 1 μm up to 20 μm. We are able to resolve the spatial field distribution of each cavity mode in real space by scanning a small-sized beam across the top facet of each micropillar. We spectrally resolve distinct transverse optical cavity modes in reflectivity. Using this procedure we can selectively address a single mode in the multimode micropillar cavity. Calculations for the coupling efficiency of a small-diameter beam to each mode are in very good agreement with our reflectivity measurements. △ Less

Submitted 10 November, 2010; v1 submitted 2 July, 2010; originally announced July 2010.

Comments: 7 pages, 8 figures

Journal ref: Phys Rev B 82, 195330 (2010)

Observation of a stronger-than-adiabatic change of light trapped in an ultrafast switched GaAs-AlAs microcavity

Authors: Philip J. Harding, Huib J. Bakker, Alex Hartsuiker, Julien Claudon, Allard P. Mosk, Jean-Michel Gerard, Willem L. Vos

Abstract: We study the time-resolved reflectivity spectrum of a switched planar GaAs-AlAs microcavity. Between 5 and 40 ps after the switching (pump) pulse we observe a strong excess probe reflectivity and a change of the frequency of light trapped in the cavity up to 5 linewidths away from the cavity resonance. This frequency change does not adiabatically follow the fast-changing cavity resonance. The freq… ▽ More We study the time-resolved reflectivity spectrum of a switched planar GaAs-AlAs microcavity. Between 5 and 40 ps after the switching (pump) pulse we observe a strong excess probe reflectivity and a change of the frequency of light trapped in the cavity up to 5 linewidths away from the cavity resonance. This frequency change does not adiabatically follow the fast-changing cavity resonance. The frequency change is attributed to an accumulated phase change due to the time-dependent refractive index. An analytical model predicts dynamics in qualitative agreement with the experiments, and points to crucial parameters that control future applications. △ Less

Submitted 18 December, 2011; v1 submitted 26 October, 2009; originally announced October 2009.

Comments: Discussed effect of probe bandwidth. Included functional forms of n(z) and R(z)

Journal ref: J. Opt. Soc. Am. B, Vol. 29, Issue 2, pp. A1-A5 (2012)

Measuring the true quality factor of an ultrafast photonic microcavity: homogeneous versus inhomogeneous broadening

Authors: Alex Hartsuiker, Allard P. Mosk, Julien Claudon, Jean-Michel Gérard, Willem L. Vos

Abstract: We have measured time-resolved the photon storage time and the quality factor of an ultrafast photonic cavity using an autocorrelator. The cavity consists of a $λ$-thick GaAs layer sandwiched between GaAs/AlAs distributed Bragg reflectors and resonates at 985 nm wavelength. The inverse relative linewidth measured with white light reflectivity is 830, while the quality factor obtained from the ti… ▽ More We have measured time-resolved the photon storage time and the quality factor of an ultrafast photonic cavity using an autocorrelator. The cavity consists of a $λ$-thick GaAs layer sandwiched between GaAs/AlAs distributed Bragg reflectors and resonates at 985 nm wavelength. The inverse relative linewidth measured with white light reflectivity is 830, while the quality factor obtained from the time resolved measurements is 1500. The photon storage time in the cavity is 0.78 ps. We show that the difference between the quality factor and the inverse relative linewidth results from inhomogeneous broadening of the microcavity resonance due to a spatial gradient in the cavity layer. △ Less

Submitted 11 June, 2009; v1 submitted 10 June, 2009; originally announced June 2009.

Comments: 5 figures

Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity

Authors: Philip J. Harding, Allard P. Mosk, Alex Hartsuiker, Yoanna-Reine Nowicki-Bringuier, Jean-Michel Gerard, Willem L. Vos

Abstract: We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a do… ▽ More We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a change in reflectivity modulation depth. The model predicts an optimal cavity Q for any given induced carrier density, if the modulation depth is to be maximized. △ Less

Submitted 19 October, 2009; v1 submitted 24 January, 2009; originally announced January 2009.

Comments: 1.) improved introduction 2.) superior modelling, better agreement with data

Kerr and free-carrier ultrafast all-optical switching of GaAs/AlAs nanostructures near the three-photon edge of GaAs

Authors: Alex Hartsuiker, Philip J. Harding, Yoanna-Reine Nowicki-Bringuier, Jean-Michel Gérard, Willem L. Vos

Abstract: We performed non-degenerate pump-probe experiments on a GaAs/AlAs photonic structure. We switched the photonic properties using the optical Kerr effect and free carriers excited by three photon absorption. From these measurements we extracted the non-degenerate Kerr coefficients over a broad wavelength range and we extracted the three photon absorption coefficient for GaAs at three wavelengths i… ▽ More We performed non-degenerate pump-probe experiments on a GaAs/AlAs photonic structure. We switched the photonic properties using the optical Kerr effect and free carriers excited by three photon absorption. From these measurements we extracted the non-degenerate Kerr coefficients over a broad wavelength range and we extracted the three photon absorption coefficient for GaAs at three wavelengths in the near infrared. We show that the optical Kerr effect is large enough to switch a cavity resonance with a high \emph{Q} ($Q>1000$) photonic cavity. △ Less

Submitted 19 June, 2008; originally announced June 2008.

Comments: 18 pages, 8 figures pdf format

Journal ref: J. Appl. Phys. 104, 083105 (2008)