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Ultralow-loss photonic integrated chips on 8-inch anomalous-dispersion Si$_3$N$_4$-SiO$_2$-Si Wafer
Authors:
Shuai Liu,
Matthew W. Puckett,
Jianfeng Wu,
Abdulkarim Hariri,
Yuheng Zhang,
Zheshen Zhang
Abstract:
We report the fabrication of 8-inch crack-free, dispersion-engineered Si$_3$N$_4$-SiO$_2$-Si wafers fully compatible with industrial foundry silicon photonics fabrication lines. By combining these wafers with a developed amorphous silicon (a-Si) hardmask etching technique, we achieve ultra-low-loss Si$_3$N$_4$ photonic integrated circuits (PICs) with intrinsic quality factors exceeding…
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We report the fabrication of 8-inch crack-free, dispersion-engineered Si$_3$N$_4$-SiO$_2$-Si wafers fully compatible with industrial foundry silicon photonics fabrication lines. By combining these wafers with a developed amorphous silicon (a-Si) hardmask etching technique, we achieve ultra-low-loss Si$_3$N$_4$ photonic integrated circuits (PICs) with intrinsic quality factors exceeding $25 \times 10^6$ using electron beam lithography and $24 \times 10^6$ using standard ultraviolet stepper photolithography. Frequency-comb generation is demonstrated on these high-quality Si$_3$N$_4$ PICs, corroborating the designed anomalous dispersion. These results establish the feasibility of mass-manufacturing high-performance, dispersion-engineered Si$_3$N$_4$ PICs using standard foundry-grade processes, opening new pathways for applications in optical communications, nonlinear optics, and quantum optics.
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Submitted 9 February, 2025;
originally announced February 2025.
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Entangled dual-comb spectroscopy
Authors:
Abdulkarim Hariri,
Shuai Liu,
Haowei Shi,
Quntao Zhuang,
Xudong Fan,
Zheshen Zhang
Abstract:
Optical frequency combs have emerged as a cornerstone for a wide range of areas, including spectroscopy, ranging, optical clocks, time and frequency transfer, waveform synthesis, and communications. However, quantum mechanical fluctuations of the optical carrier impose fundamental performance limits on the precision of traditional classical laser frequency combs, particularly in their use for inte…
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Optical frequency combs have emerged as a cornerstone for a wide range of areas, including spectroscopy, ranging, optical clocks, time and frequency transfer, waveform synthesis, and communications. However, quantum mechanical fluctuations of the optical carrier impose fundamental performance limits on the precision of traditional classical laser frequency combs, particularly in their use for interferometry and spectroscopy. Entanglement, as a quintessential quantum resource, allows for surpassing the fundamental limits of classical systems. Here, we introduce and experimentally demonstrate entangled dual-comb spectroscopy (EDCS) that surmounts the fundamental limits of classical DCS. EDCS builds on tailored entangled spectral structures of the frequency combs, enabling simultaneous detection of all comb lines below the standard quantum limit of classical DCS. Applying EDCS in gas detection, we achieve a 2.6 dB enhancement in signal-to-noise ratio and a 1.7-fold reduction in integration time over classical DCS, rendering EDCS particularly suited for dynamic chemical and biological sensing, where fast, precise measurements subject to power constraints are required. EDCS represents a new paradigm for quantum frequency combs, underscoring their prospects in a plethora of applications in precision metrology, spectroscopy, and timekeeping.
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Submitted 27 December, 2024;
originally announced December 2024.
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Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching
Authors:
Shuai Liu,
Yuheng Zhang,
Abdulkarim Hariri,
Abdur-Raheem Al-Hallak,
Zheshen Zhang
Abstract:
Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have emerged as a versatile platform for a wide range of applications, such as nonlinear optics, narrow-linewidth lasers, and quantum photonics. While thin-film Si$_3$N$_4$ processes have been extensively developed, many nonlinear and quantum optics applications require the use of thick Si$_3$N$_4$ films with engineered dispersion,…
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Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have emerged as a versatile platform for a wide range of applications, such as nonlinear optics, narrow-linewidth lasers, and quantum photonics. While thin-film Si$_3$N$_4$ processes have been extensively developed, many nonlinear and quantum optics applications require the use of thick Si$_3$N$_4$ films with engineered dispersion, high mode confinement, and low optical loss. However, high tensile stress in thick Si$_3$N$_4$ films often leads to cracking, making the fabrication challenging to meet these requirements. In this work, we present a robust and reliable fabrication method for ultra-low-loss, dispersion-engineered Si$_3$N$_4$ PICs using amorphous silicon (a-Si) hardmask etching. This approach enables smooth etching of thick Si$_3$N$_4$ waveguides while ensuring long-term storage of crack-free Si$_3$N$_4$ wafers. We achieve intrinsic quality factors ($Q_i$) as high as $25.6 \times 10^6$, corresponding to a propagation loss of 1.6 dB/m. The introduction of a-Si hardmask etching and novel crack-isolation trenches offers notable advantages, including high etching selectivity, long-term wafer storage, high yield, and full compatibility with existing well-developed silicon-based semiconductor processes. We demonstrate frequency comb generation in the fabricated microring resonators, showcasing the platform's potential for applications in optical communication, nonlinear optics, metrology, and spectroscopy. This stable and efficient fabrication method offers high performance with significantly reduced fabrication complexity, representing a remarkable advancement toward mass production of Si$_3$N$_4$ PICs for a wide spectrum of applications.
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Submitted 3 November, 2024;
originally announced November 2024.
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Deep Learning Improves Contrast in Low-Fluence Photoacoustic Imaging
Authors:
Ali Hariri,
Kamran Alipour,
Yash Mantri,
Jurgen P. Schulze,
Jesse V. Jokerst
Abstract:
Low fluence illumination sources can facilitate clinical transition of photoacoustic imaging because they are rugged, portable, affordable, and safe. However, these sources also decrease image quality due to their low fluence. Here, we propose a denoising method using a multi-level wavelet-convolutional neural network to map low fluence illumination source images to its corresponding high fluence…
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Low fluence illumination sources can facilitate clinical transition of photoacoustic imaging because they are rugged, portable, affordable, and safe. However, these sources also decrease image quality due to their low fluence. Here, we propose a denoising method using a multi-level wavelet-convolutional neural network to map low fluence illumination source images to its corresponding high fluence excitation map. Quantitative and qualitative results show a significant potential to remove the background noise and preserve the structures of target. Substantial improvements up to 2.20, 2.25, and 4.3-fold for PSNR, SSIM, and CNR metrics were observed, respectively. We also observed enhanced contrast (up to 1.76-fold) in an in vivo application using our proposed methods. We suggest that this tool can improve the value of such sources in photoacoustic imaging.
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Submitted 19 April, 2020;
originally announced April 2020.
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Low Temperature-Mediated Enhancement of Photoacoustic Imaging Depth
Authors:
Sadreddin Mahmoodkalayeh,
Hossein Z. Jooya,
Ali Hariri,
Yang Zhou,
Qiuyun Xu,
Mohammad A. Ansari,
Mohammad R. N. Avanaki
Abstract:
We study the temperature dependence of the underlying mechanisms related to the signal strength and imaging depth in photoacoustic imaging. The presented theoretical and experimental results indicate that imaging depth can be improved by lowering the temperature of the intermediate medium that the laser passes through to reach the imaging target. We discuss the temperature dependency of optical an…
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We study the temperature dependence of the underlying mechanisms related to the signal strength and imaging depth in photoacoustic imaging. The presented theoretical and experimental results indicate that imaging depth can be improved by lowering the temperature of the intermediate medium that the laser passes through to reach the imaging target. We discuss the temperature dependency of optical and acoustic properties of the intermediate medium and their changes due to cooling. We demonstrate that the SNR improvement of the photoacoustic signal is mainly due to the reduction of Grüneisen parameter of the intermediate medium which leads to a lower level of background noise. These findings may open new possibilities toward the application of biomedical laser refrigeration.
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Submitted 20 February, 2018;
originally announced February 2018.
