Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor
Authors:
B. Pilsl,
T. Bergauer,
R. Casanova,
H. Handerkas,
C. Irmler,
U. Kraemer,
R. Marco-Hernandez,
J. Mazorra de Cos,
F. R. Palomo,
S. Portschy,
S. Powell,
P. Sieberer,
J. Sonneveld,
H. Steininger,
E. Vilella,
B. Wade,
C. Zhang,
S. Zhang
Abstract:
The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, t…
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The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, the \emph{RD50-MPW3}, including separated power domains for reduced noise, a new backside biasing scheme, and an enhanced guard ring structure, enabling operation at bias voltages up to \SI{800}{V}.
Tests with non-irradiated samples achieved hit detection efficiencies exceeding \SI{99.9}{\%} and a spatial resolution around \SI{16}{μm}. Neutron-irradiated sensors were characterized using IV measurements and test-beam campaigns, confirming the sensor's robustness in high-radiation environments. The results highlight the ability of HV-CMOS technology to restore hit detection efficiency post-irradiation by increasing the applied bias voltage. Details of these measurements and timing performance are presented in this paper.
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Submitted 22 April, 2025;
originally announced April 2025.
Characterization of the RD50-MPW4 HV-CMOS pixel sensor
Authors:
B. Pilsl,
T. Bergauer,
R. Casanova,
H. Handerkas,
C. Irmler,
U. Kraemer,
R. Marco-Hernandez,
J. Mazorra de Cos,
F. R. Palomo,
S. Powell,
P. Sieberer,
J. Sonneveld,
H. Steininger,
E. Vilella,
B. Wade,
C. Zhang,
S. Zhang
Abstract:
The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive thresho…
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The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive threshold settings and full matrix operation. Enhancements include separated power domains for peripheral and in-pixel digital readout, a new backside-biasing step, and an improved guard ring structure supporting biasing up to 500V, significantly boosting radiation hardness. Laboratory measurements and test beam results presented in this paper show significant improvements over its predecessor regarding noise behavior, spatial resolution, and efficiency.
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Submitted 16 September, 2024; v1 submitted 31 July, 2024;
originally announced July 2024.
