Hybrid electroluminescence device for on-demand single photon generation at room temperature
Authors:
Aleksander Rodek,
Mateusz Hajdel,
Kacper Oreszczuk,
Anna Kafar,
Muhammed Aktas,
Lucja Marona,
Marek Potemski,
Czeslaw Skierbiszewski,
Piotr Kossacki
Abstract:
Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into potential optoelectronic devices due to the layered structur…
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Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into potential optoelectronic devices due to the layered structure of the host crystal. This work presents compact hybrid electroluminescence devices, in which GaN laser diodes (LDs) are used for bottom-to-top excitation of hBN nanoflakes deposited on the laser facets. Our approach circumvents the issue of electroluminescence generation from hBN and provides access to the SPE's signal without optical driving by an external laser. Using laser diodes upgraded with Bragg reflectors a room-temperature generation of single photons from hBN is confirmed by an 80%-dip in their g(2) second-order correlation. The on-demand emission of single photons at room temperature is demonstrated by driving the laser diodes in pulsed operation, with confidence supported by a measured g(2)(0) value of 0.37.
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Submitted 5 August, 2024; v1 submitted 1 August, 2024;
originally announced August 2024.
Electrically pumped blue laser diodes with nanoporous bottom cladding
Authors:
Marta Sawicka,
Grzegorz Muziol,
Natalia Fiuczek,
Mateusz Hajdel,
Marcin Siekacz,
Anna Feduniewicz-Żmuda,
Krzesimir Nowakowski-Szkudlarek,
Paweł Wolny,
Mikołaj Żak,
Henryk Turski,
Czesław Skierbiszewski
Abstract:
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cla…
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We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cladding are compared to the refer-ence structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The de-sign of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.
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Submitted 11 January, 2022;
originally announced January 2022.
