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Machine-learning based high-bandwidth magnetic sensing
Authors:
Galya Haim,
Stefano Martina,
John Howell,
Nir Bar-Gill,
Filippo Caruso
Abstract:
Recent years have seen significant growth of quantum technologies, and specifically quantum sensing, both in terms of the capabilities of advanced platforms and their applications. One of the leading platforms in this context is nitrogen-vacancy (NV) color centers in diamond, providing versatile, high-sensitivity, and high-resolution magnetic sensing. Nevertheless, current schemes for spin resonan…
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Recent years have seen significant growth of quantum technologies, and specifically quantum sensing, both in terms of the capabilities of advanced platforms and their applications. One of the leading platforms in this context is nitrogen-vacancy (NV) color centers in diamond, providing versatile, high-sensitivity, and high-resolution magnetic sensing. Nevertheless, current schemes for spin resonance magnetic sensing (as applied by NV quantum sensing) suffer from tradeoffs associated with sensitivity, dynamic range, and bandwidth. Here we address this issue, and implement machine learning tools to enhance NV magnetic sensing in terms of the sensitivity/bandwidth tradeoff in large dynamic range scenarios. We experimentally demonstrate this new approach, reaching an improvement in the relevant figure of merit by a factor of up to 5. Our results promote quantum machine learning protocols for sensing applications towards more feasible and efficient quantum technologies.
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Submitted 19 September, 2024;
originally announced September 2024.
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Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal
Authors:
T. Zabelotsky,
S. Singh,
G. Haim,
R. Malkinson,
S. Kadkhodazadeh,
I. P. Radko,
I. Aharonovich,
H. Steinberg,
Kirstine Berg-Sørensen,
A. Huck,
T. Taniguchi,
K. Watanabe,
N. Bar-Gill
Abstract:
Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defe…
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Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper we study various techniques, focused ion beam (FIB), electron irradiation and ion implantation, for the preparation of hBN flakes from bulk crystals, and relevant post-processing treatments to create VB${^-}$s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimising implantation parameters, while careful sample cleaning proved important to achieve best results.
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Submitted 9 May, 2023;
originally announced May 2023.
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Long-Timescale Magnetization Ordering Induced by an Adsorbed Chiral Monolayer on Ferromagnets
Authors:
Idan Meirzada,
Nir Sukenik,
Galya Haim,
Shira Yochelis,
Yossi Paltiel,
Nir Bar-Gill
Abstract:
When an electron passes through a chiral molecule there is a high probability for a correlation between the momentum and spin of the charge, thus leading to spin polarized current. This phenomenon is known as the chiral induced spin selectivity (CISS) effect. One of the most surprising experimental results recently demonstrated is that magnetization reversal in a ferromagnet (FM) with perpendicula…
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When an electron passes through a chiral molecule there is a high probability for a correlation between the momentum and spin of the charge, thus leading to spin polarized current. This phenomenon is known as the chiral induced spin selectivity (CISS) effect. One of the most surprising experimental results recently demonstrated is that magnetization reversal in a ferromagnet (FM) with perpendicular anisotropy can be realized solely by chemisorbing a chiral molecular monolayer without applying any current or external magnetic field. This result raises the currently open question of whether this effect is due to the bonding event, held by the ferromagnet, or a long timescale effect stabilized by exchange interactions. In this work we have performed vectorial magnetic field measurements of the magnetization reorientation of a ferromagnetic layer exhibiting perpendicular anisotropy due to CISS using nitrogen-vacancy centers in diamond, and followed the time dynamics of this effect. In parallel, we have measured the molecular monolayer tilt angle in order to find a correlation between the time dependence of the magnetization re-orientation and the change of the tilt angle of the molecular monolayer. We have identified that changes in the magnetization direction correspond to changes of the molecular monolayer tilt angle, providing evidence for a long-timescale characteristic of the induced magnetization reorientation. This suggests that the CISS effect has an effect over long-timescales which we attribute to exchange interactions. These results offer significant insights into the fundamental processes underlying the CISS effect, contributing to the implementation of CISS in state-of-the-art applications such as spintronic and magnetic memory devices.
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Submitted 3 March, 2021;
originally announced March 2021.
