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FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
Authors:
J. Casamento,
K. Nomoto,
T. S. Nguyen,
H. Lee,
C. Savant,
L. Li,
A. Hickman,
T. Maeda,
J. Encomendero,
V. Gund,
A. Lal,
J. C. M. Hwang,
H. G. Xing,
D. Jena
Abstract:
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high…
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We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics.
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Submitted 27 February, 2023;
originally announced February 2023.
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HZO-based FerroNEMS MAC for In-Memory Computing
Authors:
Shubham Jadhav,
Ved Gund,
Benyamin Davaji,
Debdeep Jena,
Huili,
Xing,
Amit Lal
Abstract:
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $μ$m $\times$ 30 $μ$m unimorph cantilever with 20 nm thick ferroelectric HZO on 1 $μ$m $SiO_2$.Partial ferroelectric switching in HZO achieves analog programmable control of the…
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This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $μ$m $\times$ 30 $μ$m unimorph cantilever with 20 nm thick ferroelectric HZO on 1 $μ$m $SiO_2$.Partial ferroelectric switching in HZO achieves analog programmable control of the piezoelectric coefficient ($d_{31}$) which serves as the computational weight for multiply-accumulate (MAC) operations. The displacement of the piezoelectric unimorph was recorded by actuating the device with different input voltages $V_{in}$. The resulting displacement was measured as a function of the ferroelectric programming/poling voltage $V_p$. The slopes of central beam displacement ($δ_{max}$) vs $V_{in}$ were measured to be between 182.9nm/V (for -8 $V_p$) and -90.5nm/V (for 8 $V_p$), demonstrating that $V_p$ can be used to change the direction of motion of the beam. The resultant ($δ_{max}$) from AC actuation is in the range of -18 to 36 nm and is a scaled product of the input voltage and programmed $d_{31}$ (governed by the $V_p$). The multiplication function serves as the fundamental unit for MAC operations with the ferroelectric NEMS unimorph. The displacement from many such beams can be added by summing the capacitance changes, providing a pathway to implement a multi-input and multi-weight neuron. A scaling and fabrication analysis suggests that this device can be CMOS compatible, achieving high in-memory computational throughput.
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Submitted 12 August, 2022;
originally announced August 2022.
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Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric
Authors:
Joseph Casamento,
Hyunjea Lee,
Takuya Maeda,
Ved Gund,
Kazuki Nomoto,
Len van Deurzen,
Amit Lal,
Huili,
Xing,
Debdeep Jena
Abstract:
Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($ε_r$) values relative to AlN. $ε_r$ values of ~17 to 21 for Sc contents of 17 to 25% (x=0.17 to 0.25) measured electrically by capacitance-voltage (CV) measurements at 500 kHz frequency indicate Sc$_x$Al$_{1-x}$N has the largest relative dielectric…
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Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($ε_r$) values relative to AlN. $ε_r$ values of ~17 to 21 for Sc contents of 17 to 25% (x=0.17 to 0.25) measured electrically by capacitance-voltage (CV) measurements at 500 kHz frequency indicate Sc$_x$Al$_{1-x}$N has the largest relative dielectric permittivity of any existing nitride material. This points toward the usage of Sc$_x$Al$_{1-x}$N as potential epitaxial, single-crystalline dielectric material that can be deposited in situ on GaN and AlN electronic and photonic devices for enhanced performance.
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Submitted 27 October, 2021;
originally announced October 2021.
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Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures
Authors:
Joseph Casamento,
Ved Gund,
Hyunjea Lee,
Kazuki Nomoto,
Takuya Maeda,
Benyamin Davaji,
Mohammad Javad Asadi,
John Wright,
Yu-Tsun Shao,
David A. Muller,
Amit Lal,
Huili,
Xing,
Debdeep Jena
Abstract:
Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement c…
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Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement conditions, and in multiple samples. The measured coercive field values are Ec~0.7 MV/cm at room temperature, with remnant polarization Pr~10 μC/cm2 for ~100 nm thick ScAlN layers. These values are substantially lower than comparable ScAlN control layers deposited by sputtering. Importantly, the coercive field of MBE ScAlN is smaller than the critical breakdown field of GaN, offering the potential for low voltage ferroelectric switching. The low coercive field ferroelectricity of ScAlN on GaN heralds the possibility of new forms of electronic and photonic devices with epitaxially integrated ferroelectric/semiconductor heterostructures that take advantage of the GaN electronic and photonic semiconductor platform, where the underlying semiconductors themselves exhibit spontaneous and piezoelectric polarization.
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Submitted 20 May, 2021;
originally announced May 2021.
