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UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films
Abstract: We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithog-raphy
Submitted 8 January, 2020; originally announced January 2020.
Comments: 4 pages, 2 figures
Journal ref: Phys. Status Solidi A, 206, No. 7, 1484-1487, (2009)