-
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
Authors:
Johannes K. Zettler,
Pierre Corfdir,
Christian Hauswald,
Esperanza Luna,
Uwe Jahn,
Timur Flissikowski,
Emanuel Schmidt,
Carsten Ronning,
Achim Trampert,
Lutz Geelhaar,
Holger T. Grahn,
Oliver Brandt,
Sergio Fernández-Garrido
Abstract:
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative s…
▽ More
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement.
△ Less
Submitted 30 January, 2024;
originally announced January 2024.
-
A 3.5-THz, x6-Harmonic, Single-Ended Schottky Diode Mixer for Frequency Stabilization of Quantum-Cascade Lasers
Authors:
Divya Jayasankar,
Vladimir Drakinskiy,
Nick Rothbart,
Heiko Richter,
Xiang Lü,
Lutz Schrottke,
Holger T. Grahn,
Martin Wienold,
Heinz-Wilhelm Hübers,
Peter Sobis,
Jan Stake
Abstract:
Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed frequency converter is based on a single-ended, planar Schottky diode with a sub-micron anode contact area defined on a suspended 2-$μ$m ultra-thin GaAs substrate. The…
▽ More
Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed frequency converter is based on a single-ended, planar Schottky diode with a sub-micron anode contact area defined on a suspended 2-$μ$m ultra-thin GaAs substrate. The dc-grounded anode pad was combined with the radio frequency E-plane probe, which resulted in an electrically compact circuit. At 200 MHz intermediate frequency, a mixer conversion loss of about 59 dB is measured and resulting in a 40 dB signal-to-noise ratio for phase locking 3.5-THz quantum-cascade laser. Using a quasi-static diode model combined with electromagnetic simulations, good agreement with the measured results was obtained. Harmonic frequency converters without the need of cryogenic cooling will help in the realization of highly sensitive space and air-borne heterodyne receivers.
△ Less
Submitted 29 August, 2021; v1 submitted 17 June, 2021;
originally announced July 2021.
-
Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells
Authors:
Hanno Küpers,
Ryan B. Lewis,
Pierre Corfdir,
Michael Niehle,
Timur Flissikowski,
Holger T. Grahn,
Achim Trampert,
Oliver Brandt,
Lutz Geelhaar
Abstract:
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell qu…
▽ More
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency. The photoluminescence intensity of shell quantum wells grown with a flux sequence corresponding to migration enhanced epitaxy, i. e. when As and the group-III metals essentially do not impinge at the same time, is more than two orders of magnitude higher than for shell quantum wells prepared with substantially overlapping fluxes. Transmission electron microscopy does not reveal any extended defects explaining this difference. Our analysis of photoluminescence transients shows that co-deposition has two detrimental microscopic effects. First, a higher density of electrically active point defects leads to internal electric fields reducing the electron-hole wave function overlap. Second, more point defects form that act as nonradiative recombination centers. Our study demonstrates that the source arrangement of the growth reactor, which is of mere technical relevance for planar structures, can have drastic consequences for the materials properties of nanowire shells. We expect that this finding holds also for other alloy nanowire shells.
△ Less
Submitted 23 June, 2021;
originally announced June 2021.
-
Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
Authors:
Oliver Brandt,
Vladimir M. Kaganer,
Jonas Lähnemann,
Timur Flissikowski,
Carsten Pfüller,
Karl K. Sabelfeld,
Anastasya E. Kireeva,
Caroline Chèze,
Raffaella Calarco,
Holger T. Grahn,
Uwe Jahn
Abstract:
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatur…
▽ More
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatures lower than 120 K, a quantum capture process has to be taken into account in addition. Combining the diffusion length extracted from these profiles and the effective carrier lifetime measured by time-resolved photoluminescence experiments, we deduce the carrier diffusivity as a function of temperature. The experimental values are found to be close to theoretical ones for the ambipolar diffusivity of free carriers limited only by intrinsic phonon scattering. This agreement is shown to be fortuitous. The high diffusivity at low temperatures instead originates from an increasing participation of excitons in the diffusion process.
△ Less
Submitted 23 November, 2021; v1 submitted 29 September, 2020;
originally announced September 2020.
-
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields
Authors:
T. Auzelle,
M. Azadmand,
T. Flissikowski,
M. Ramsteiner,
K. Morgenroth,
C. Stemmler,
S. Fernández-Garrido,
S. Sanguinetti,
H. T. Grahn,
L. Geelhaar,
O. Brandt
Abstract:
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times a…
▽ More
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending. We propose a unified mechanism accounting for nonradiative recombination in GaN nanowires of arbitrary diameter.
△ Less
Submitted 4 February, 2021; v1 submitted 17 January, 2020;
originally announced January 2020.
-
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
Authors:
C. Sinito,
P. Corfdir,
C. Pfüller,
G. Gao,
J. Bartolomé Vílchez,
S. Kölling,
A. Rodil Doblado,
U. Jahn,
J. Lähnemann,
T. Auzelle,
J. K. Zettler,
T. Flissikowski,
P. Koenraad,
H. T. Grahn,
L. Geelhaar,
S. Fernández-Garrido,
O. Brandt
Abstract:
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN qua…
▽ More
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction. These quantum disks are found to exhibit intense emission at unexpectedly high energies, namely, significantly above the GaN bandgap, and almost independent of the disk thickness. An in-depth investigation of the actual structure and composition of the nanowires reveals a spontaneously formed Al gradient both along and across the nanowire, resulting in a complex core/shell structure with an Al deficient core and an Al rich shell with continuously varying Al content along the entire length of the (Al,Ga)N segment. This compositional change along the nanowire growth axis induces a polarization doping of the shell that results in a degenerate electron gas in the disk, thus screening the built-in electric fields. The high carrier density not only results in the unexpectedly high transition energies, but also in radiative lifetimes depending only weakly on temperature, leading to a comparatively high internal quantum efficiency of the GaN quantum disks up to room temperature.
△ Less
Submitted 8 August, 2019; v1 submitted 10 May, 2019;
originally announced May 2019.
