Charge transfer mediated giant photo-amplification in air-stable $α$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric contacts
Authors:
Shreyasi Das,
Arup Ghorai,
Sourabh Pal,
Somnath Mahato,
Soumen Das,
Samit K. Ray
Abstract:
Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI…
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Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI$_3$/WS$_2$) mixed dimensional heterostructure based photo-field-effect-transistors (photo-FETs) with asymmetric metal electrodes (Cr/WS$_2$/Au), exhibiting extremely low dark current (~10-12 A) with a responsivity of ~102 A/W at zero gate bias. The Schottky barrier (WS$_2$/Au interface) induced rectification characteristics in the channel accompanied by the excellent photogating effect from solution-processed $α$-phase CsPbI$_3$ NCs sensitizers, resulting in gate-tunable broadband photodetection with a very high responsivity (~104 A/W) and excellent sensitivity (~106). Most interestingly, the device shows superior performance even under high humidity (50-65%) conditions owing to the formation of cubic $α$-phase CsPbI$_3$ nanocrystals with a relatively smaller lattice constant (a = 6.2315 Å) and filling of surface vacancies (Pb2+ centres) with the sulfur atoms from WS$_2$ layer, thus protecting it from environmental degradation. These results emphasise a novel strategy for developing mixed dimensional hybrid heterostructure based phototransistors for futuristic integrated nano-optoelectronic systems.
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Submitted 30 December, 2022;
originally announced January 2023.
Impact of Trap Filling on Carrier Diffusion in MAPbBr$_3$ Single Crystals
Authors:
N. Ganesh,
Anaranya Ghorai,
Shrreya Krishnamurthy,
Suman Banerjee,
K. L. Narasimhan,
Satishchandra B. Ogale,
K. S. Narayan
Abstract:
We present experimental evidence showing that the effective carrier diffusion length ($L_d$) and lifetime ($τ$) depend on the carrier density in MAPbBr$_3$ single crystals. Independent measurements reveal that both $L_d$ and $τ$ decrease with an increase in photo-carrier density. Scanning photocurrent microscopy is used to extract the characteristic photocurrent $I_{ph}$ decay-length parameter,…
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We present experimental evidence showing that the effective carrier diffusion length ($L_d$) and lifetime ($τ$) depend on the carrier density in MAPbBr$_3$ single crystals. Independent measurements reveal that both $L_d$ and $τ$ decrease with an increase in photo-carrier density. Scanning photocurrent microscopy is used to extract the characteristic photocurrent $I_{ph}$ decay-length parameter, $L_d$, which is a measure of effective carrier diffusion. The $L_d$ magnitudes for electrons and holes were determined to be ~ 13.3 $μ$m and ~ 13.8 $μ$m respectively. A marginal increase in uniform light bias ($\leq 5 \times 10^{15}$ photons/cm$^2$) increases the modulated photocurrent magnitude and reduces the $L_d$ parameter by a factor of two and three for electrons and holes respectively, indicating that the recombination is not monomolecular. The $L_d$ variations were correlated to the features in photoluminescence lifetime studies. Analysis of lifetime variation shows intensity-dependent monomolecular and bimolecular recombination trends with recombination constants determined to be ~ 9.3 $\times 10^6$ s$^{-1}$ and ~ 1.4 $\times 10^{-9}$ cm$^{3}$s$^{-1}$ respectively. Based on the trends of $L_d$ and lifetime, it is inferred that the sub-band-gap trap recombination influences carrier transport in the low-intensity excitation regime, while bimolecular recombination and transport dominate at high intensity.
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Submitted 26 July, 2020;
originally announced July 2020.
