Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon-Enhanced Sum-Frequency Microscopy
Authors:
Niclas S. Mueller,
Alexander P. Fellows,
Ben John,
Andrew E. Naclerio,
Christian Carbogno,
Katayoun Gharagozloo-Hubmann,
Damián Baláž,
Ryan A. Kowalski,
Hendrik H. Heenen,
Christoph Scheurer,
Karsten Reuter,
Joshua D. Caldwell,
Martin Wolf,
Piran R. Kidambi,
Martin Thämer,
Alexander Paarmann
Abstract:
Hexagonal boron nitride (hBN) is an important 2D material for van der Waals heterostructures, single photon emitters, and infrared nanophotonics. The optical characterization of mono- and few-layer samples of hBN however remains a challenge as the material is almost invisible optically. Here we introduce phase-resolved sum-frequency microscopy as a technique for imaging monolayers of hBN grown by…
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Hexagonal boron nitride (hBN) is an important 2D material for van der Waals heterostructures, single photon emitters, and infrared nanophotonics. The optical characterization of mono- and few-layer samples of hBN however remains a challenge as the material is almost invisible optically. Here we introduce phase-resolved sum-frequency microscopy as a technique for imaging monolayers of hBN grown by chemical vapor deposition (CVD) and visualize their crystal orientation. A combination of femtosecond mid-infrared (IR) and visible laser pulses is used for sum-frequency generation (SFG), which is imaged in a wide-field optical microscope. The IR laser resonantly excites a phonon of hBN that leads to an ~800-fold enhancement of the SFG intensity, making it possible to image large 100x100 μm2 sample areas in less than 1 s. Implementing heterodyne detection in combination with azimuthal rotation of the sample further provides full crystallographic information. Through combined knowledge of topography and crystal orientation, we find that triangular domains of CVD-grown monolayer hBN have nitrogen-terminated zigzag edges. Overall, SFG microscopy can be used as an ultra-sensitive tool to image crystal structure, strain, stacking sequences, and twist angles, and is applicable to the wide range of van der Waals structures, where location and identification of monolayer regions and interfaces with broken inversion symmetry is of paramount importance.
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Submitted 23 April, 2025; v1 submitted 22 April, 2025;
originally announced April 2025.
