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Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
Authors:
B. Lefaucher,
J. -B. Jager,
V. Calvo,
A. Durand,
Y. Baron,
F. Cache,
V. Jacques,
I. Robert-Philip,
G. Cassabois,
T. Herzig,
J. Meijer,
S. Pezzagna,
M. Khoury,
M. Abbarchi,
A. Dréau,
J. -M. Gérard
Abstract:
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wi…
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We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wide spectral range that is covered by G centers emission. By finely tuning the size of the microrings, we match their zero-phonon line at 1278 nm with a resonant mode of quality factor around 3000 and volume 7.2 (lambda over n)^3. The zero-phonon line intensity is enhanced by a factor of 5, both in continuous-wave and time-resolved measurements. This is attributed to the Purcell enhancement of zero-phonon spontaneous emission into the resonant mode and quantitatively understood considering the distribution of the G centers dipoles. Despite the enhancement of the zero-phonon emission, we do not observe any sizeable decrease of the average lifetime of the G centers, which points at a low radiative yield (<10%). We reveal the detrimental impact of parasitic defects in heavily implanted silicon, and discuss the perspectives for quantum electrodynamics experiments with individual color centers in lightly implanted SOI rings. Our results provide key information for the development of deterministic single photon sources for integrated quantum photonics.
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Submitted 11 October, 2022;
originally announced October 2022.
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Broad diversity of near-infrared single-photon emitters in silicon
Authors:
A. Durand,
Y. Baron,
W. Redjem,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
J. -M. Gérard,
I. Robert-Philip,
M. Abbarchi,
V. Jacques,
G. Cassabois,
A. Dréau
Abstract:
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse the…
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We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.
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Submitted 23 October, 2020; v1 submitted 21 October, 2020;
originally announced October 2020.
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Single artificial atoms in silicon emitting at telecom wavelengths
Authors:
W. Redjem,
A. Durand,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
H. S. Nguyen,
S. Cueff,
J. -M. Gérard,
I. Robert-Philip,
B. Gil,
D. Caliste,
P. Pochet,
M. Abbarchi,
V. Jacques,
A. Dréau,
G. Cassabois
Abstract:
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exch…
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Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.
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Submitted 7 January, 2020;
originally announced January 2020.
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Giant non-linear interaction between two optical beams via a quantum dot embeddedin a photonic wire
Authors:
H. A Nguyen,
T. Grange,
B Reznychenko,
I. Yeo,
P. -L De Assis,
D Tumanov,
F Fratini,
N Malik,
E Dupuy,
N Gregersen,
A Auffèves,
J. -M Gérard,
J Claudon,
J. -Ph Poizat
Abstract:
Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a…
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Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a three-level structure in a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. The large coupling efficiency and the broad operation bandwidth of the photonic wire enable us to have two different laser beams interacting with the QD in order to control the reflectivity of a laser beam with the other one using as few as 10 photons per QD lifetime. We discuss the possibilities offered by this easily integrable system for ultra-low power logical gates and optical quantum gates.
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Submitted 9 March, 2018; v1 submitted 11 May, 2017;
originally announced May 2017.
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Electric field sensing with a scanning fiber-coupled quantum dot
Authors:
D. Cadeddu,
M. Munsch,
N. Rossi,
J. Claudon,
J. -M. Gérard,
R. J. Warburton,
M. Poggio
Abstract:
We demonstrate the application of a fiber-coupled quantum-dot-in-a-tip as a probe for scanning electric field microscopy. We map the out-of-plane component of the electric field induced by a pair of electrodes by measurement of the quantum-confined Stark effect induced on a quantum dot spectral line. Our results are in agreement with finite element simulations of the experiment. Furthermore, we pr…
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We demonstrate the application of a fiber-coupled quantum-dot-in-a-tip as a probe for scanning electric field microscopy. We map the out-of-plane component of the electric field induced by a pair of electrodes by measurement of the quantum-confined Stark effect induced on a quantum dot spectral line. Our results are in agreement with finite element simulations of the experiment. Furthermore, we present results from analytic calculations and simulations which are relevant to any electric field sensor embedded in a dielectric tip. In particular, we highlight the impact of the tip geometry on both the resolution and sensitivity.
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Submitted 5 May, 2017;
originally announced May 2017.
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Corotating Magnetic Reconnection Site in Saturn's Magnetosphere
Authors:
Zhonghua Yao,
A. J. Coates,
L. C. Ray,
I. J. Rae,
D. Grodent,
G. H. Jones,
M. K. Dougherty,
C. J. Owen,
R. L. Guo,
W. Dunn,
A. Radioti,
Z. Y. Pu,
G. R. Lewis,
J. H. Waite,
J. -C. Gerard
Abstract:
Using measurements from the Cassini spacecraft in Saturn's magnetosphere, we propose a 3D physical picture of a corotating reconnection site, which can only be driven by an internally generated source. Our results demonstrate that the corotating magnetic reconnection can drive an expansion of the current sheet in Saturn's magnetosphere and, consequently, can produce Fermi acceleration of electrons…
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Using measurements from the Cassini spacecraft in Saturn's magnetosphere, we propose a 3D physical picture of a corotating reconnection site, which can only be driven by an internally generated source. Our results demonstrate that the corotating magnetic reconnection can drive an expansion of the current sheet in Saturn's magnetosphere and, consequently, can produce Fermi acceleration of electrons. This reconnection site lasted for longer than one of Saturn's rotation period. The long-lasting and corotating natures of the magnetic reconnection site at Saturn suggest fundamentally different roles of magnetic reconnection in driving magnetospheric dynamics (e.g., the auroral precipitation) from the Earth. Our corotating reconnection picture could also potentially shed light on the fast rotating magnetized plasma environments in the solar system and beyond.
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Submitted 7 September, 2017; v1 submitted 17 January, 2017;
originally announced January 2017.
