Dephasing of ion beams as Magnetic Vortex Acceleration regime transitions into a bubble-like field structure
Authors:
Sahel Hakimi,
Stepan S. Bulanov,
Axel Huebl,
Lieselotte Obst-Huebl,
Kei Nakamura,
Anthony Gonsalves,
Thomas Schenkel,
Jeroen van Tilborg,
Jean-Luc Vay,
Carl B. Schroeder,
Eric Esarey,
Cameron R. Geddes
Abstract:
The interaction of an ultra-intense laser pulse with a near critical density target results in the formation of a plasma channel, a strong azimuthal magnetic field and moving vortices. An application of this is the generation of energetic and collimated ion beams via Magnetic Vortex Acceleration. The optimized regime of Magnetic Vortex Acceleration is becoming experimentally accessible with new hi…
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The interaction of an ultra-intense laser pulse with a near critical density target results in the formation of a plasma channel, a strong azimuthal magnetic field and moving vortices. An application of this is the generation of energetic and collimated ion beams via Magnetic Vortex Acceleration. The optimized regime of Magnetic Vortex Acceleration is becoming experimentally accessible with new high intensity laser beamlines coming online and advances made in near critical density target fabrication. The robustness of the acceleration mechanism with realistic experimental conditions is examined with three-dimensional simulations. Of particular interest is the acceleration performance with different laser temporal contrast conditions, in some cases leading to pre-expanded target profiles prior to the arrival of the main pulse. Preplasma effects on the structure of the accelerating fields is explored, including a detailed analysis of the ion beam properties and the efficiency of the process. Improved scaling laws for the MVA mechanism, including the laser focal spot size effects, are presented.
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Submitted 13 September, 2024;
originally announced September 2024.
Defect engineering of silicon with ion pulses from laser acceleration
Authors:
Walid Redjem,
Ariel J. Amsellem,
Frances I. Allen,
Gabriele Benndorf,
Jianhui Bin,
Stepan Bulanov,
Eric Esarey,
Leonard C. Feldman,
Javier Ferrer Fernandez,
Javier Garcia Lopez,
Laura Geulig,
Cameron R. Geddes,
Hussein Hijazi,
Qing Ji,
Vsevolod Ivanov,
Boubacar Kante,
Anthony Gonsalves,
Jan Meijer,
Kei Nakamura,
Arun Persaud,
Ian Pong,
Lieselotte Obst-Huebl,
Peter A. Seidl,
Jacopo Simoni,
Carl Schroeder
, et al. (5 additional authors not shown)
Abstract:
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that…
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Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.
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Submitted 25 March, 2022;
originally announced March 2022.
