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Polarization and resistive switching in epitaxial 2 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ tunnel junctions
Authors:
Milena Cervo Sulzbach,
Huan Tan,
Saul Estandia,
Jaume Gazquez,
Florencio Sanchez,
Ignasi Fina,
Josep Fontcuberta
Abstract:
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementatio…
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In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementation. Here, we show that ferroelectric and electroresistive switching can be observed in ultrathin 2 nm epitaxial Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) tunnel junctions in large area capacitors (${\approx} 300μm^2$). We observe that the resistance area product is reduced to about 160 $Ω{\cdot}$cm$^2$ and 65 $Ω{\cdot}$cm$^2$ for OFF and ON resistance states, respectively. These values are two orders of magnitude smaller than those obtained in equivalent 5 nm HZO tunnel devices while preserving a similar OFF/ON resistance ratio (210 ${\%}$). The devices show memristive and spike-timing-dependent plasticity (STDP) behavior and good retention. Electroresistance and ferroelectric loops closely coincide, signaling ferroelectric switching as a driving mechanism for resistance change.
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Submitted 23 August, 2021;
originally announced August 2021.
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Nanostructure engineering of epitaxial piezoelectric α-quartz thin films on silicon
Authors:
Q. Zhang,
D. Sánchez-garcia,
R. Desgarceaux,
A. Gomez,
P. Escofet-Majora,
J. Oró-soler,
J. Gazquez,
G. Larrieu,
B. Charlot,
M. Gich,
A. Carretero-Genevrier
Abstract:
The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we report unprecedented large-scale fabrication of ordered arrays of piezoelectric epitaxial quartz nanostructures on silicon substrates by the combination of soft-chemistry and three cost effective lithographic techniques: (i)…
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The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we report unprecedented large-scale fabrication of ordered arrays of piezoelectric epitaxial quartz nanostructures on silicon substrates by the combination of soft-chemistry and three cost effective lithographic techniques: (i) laser transfer lithography, (ii) soft nanoimprint lithography on Sr-doped SiO2 sol-gel thin films and (iii) self-assembled SrCO3 nanoparticles reactive nanomasks. Epitaxial α-quartz nanopillars with different diameters (down to 50 nm) and heights (up to 2000 nm) were obtained for the first time. This work proves the control over the shape, micro- and nano-patterning of quartz thin films while preserving its crystallinity, texture and piezoelectricity. This work opens up the opportunity to fabricate new high frequency resonators and high sensitivity sensors relevant in different fields of application.
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Submitted 19 August, 2019;
originally announced August 2019.
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Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
Authors:
J. Lyu,
I. Fina,
R. Bachelet,
G. Saint-Girons,
S. Estandia,
J. Gazquez,
J. Fontcuberta,
F. Sanchez
Abstract:
SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4…
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SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4 V present long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates paves the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2.
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Submitted 5 June, 2019;
originally announced June 2019.
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Solving and refining novel thin film phases using Cu X-ray radiation: the epitaxy-induced CuMnAs tetragonal phase
Authors:
P. Wadley,
A. Crespi,
J. Gazquez,
M. A. Roldan,
P. Garcia,
V. Novak,
R. Campion,
T. Jungwirth,
C. Rinaldi,
X. Marti,
V. Holy,
C. Frontera,
J. Rius
Abstract:
We present a combined experimental and computational method which enables the precise determination of the atomic positions in a thin film using CuKα radiation, only. The capabilities of this technique surpass simple structure refinement and allow solving unknown phases stabilized by substrate-induced stress. We derive the appropriate corrections to transform the measured integrated intensities in…
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We present a combined experimental and computational method which enables the precise determination of the atomic positions in a thin film using CuKα radiation, only. The capabilities of this technique surpass simple structure refinement and allow solving unknown phases stabilized by substrate-induced stress. We derive the appropriate corrections to transform the measured integrated intensities into structure factors. Data collection was performed entirely on routinely available laboratory diffractometers (CuKα radiation); the subsequent analysis was carried out by single-crystal direct methods (δ recycling procedure) followed by the least-squares refinement of the structural parameters of the unit cell content. We selected an epitaxial thin film of CuMnAs grown on top of a GaAs substrate, which formed a crystal structure with tetragonal symmetry, differing from the bulk material which is orthorhombic. Here we demonstrate the new tetragonal form of epitaxial CuMnAs grown on GaAs substrate and present consistent high-resolution scanning transmission electron microscopy and stoichiometry analyses.
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Submitted 22 January, 2013;
originally announced January 2013.
