Elucidating the role of electron transfer in the photoluminescence of $\mathrm{MoS_{2}}$ quantum dots synthesized by fs-pulse ablation
Authors:
Anubhab Sahoo,
Tejendra Dixit,
K. V. Anil Kumar,
K. Lakshmi Ganapathi,
Pramoda K. Nayak,
M. S. Ramachandra Rao,
Sivarama Krishnan
Abstract:
Herein, $\mathrm{MoS_{2}}$ quantum dot (QDs) with controlled optical, structural, and electronic properties are synthesized using the femtosecond pulsed laser ablation in liquid (fs-PLAL) technique by varying pulse-width, ablation power, and ablation time to harness the potential for next-generation optoelectronics and quantum technology. Furthermore, this work elucidates key aspects of the mechan…
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Herein, $\mathrm{MoS_{2}}$ quantum dot (QDs) with controlled optical, structural, and electronic properties are synthesized using the femtosecond pulsed laser ablation in liquid (fs-PLAL) technique by varying pulse-width, ablation power, and ablation time to harness the potential for next-generation optoelectronics and quantum technology. Furthermore, this work elucidates key aspects of the mechanisms underlying the near-UV and blue emission, the accompanying large Stokes-shift, and the consequent change in sample color with laser exposure parameters pertaining to $\mathrm{MoS_{2}}$ QDs. Through spectroscopic analysis, including UV-visible absorption, photoluminescence, and Raman spectroscopy, we successfully unravelled the mechanisms for the change in optoelectronic properties of $\mathrm{MoS_{2}}$ QDs with laser parameters. We realize that the occurrence of a secondary phase, specifically $\mathrm{MoO_{3-x}}$, is responsible for the significant Stokes-shift and blue emission observed in this QDs system. The primary factor influencing these activities is the electron transfer observed between these two phases, as validated by excitation dependent photoluminescence, XPS and Raman spectroscopies.
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Submitted 20 May, 2024;
originally announced May 2024.
Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Authors:
Hareesh Chandrasekar,
Sandeep Kumar,
K. L. Ganapathi,
Shreesha Prabhu,
Surani Bin Dolmanan,
Sudhiranjan Tripathy,
Srinivasan Raghavan,
K. N. Bhat,
Sangeneni Mohan,
R. Muralidharan,
Navakanta Bhat,
Digbijoy N. Nath
Abstract:
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conduction band offset of 1.9 eV is extracted for HfO2/GaN along with a very low density of fixed bulk and interfacial charges. Conductance measurements on HfO2/GaN MOSC…
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We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conduction band offset of 1.9 eV is extracted for HfO2/GaN along with a very low density of fixed bulk and interfacial charges. Conductance measurements on HfO2/GaN MOSCAPs reveal an interface trap state continuum with a density of 9.37x1012 eV-1cm-2 centered at 0.48 eV below EC. The forward and reverse current densities are shown to be governed by Fowler-Nordheim tunneling and Poole-Frenkel emission respectively. Normally-ON HfO2/AlGaN/GaN MISHEMTs exhibit negligible shifts in threshold voltage, transconductances of 110mS/mm for 3 μm gate length devices, and three-terminal OFF-state gate leakage currents of 20 nA/mm at a VD of 100 V. Dynamic capacitance dispersion measurements show two peaks at the AlGaN/GaN interface corresponding to slow and fast interface traps with a peak Dit of 5.5x1013 eV-1cm-2 and 1.5x1013 eV-1cm-2 at trap levels 0.55 eV and 0.46 eV below EC respectively. The HfO2/AlGaN interface exhibits a peak Dit of 4.4x1013 eV-1cm- 2 at 0.45 eV below EC.
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Submitted 12 August, 2017;
originally announced August 2017.
