-
Optomechanical cavities based on epitaxial GaP on nominally (001)-oriented Si
Authors:
Paula Mouriño,
Laura Mercadé,
Miguel Sinusía Lozano,
Raquel Resta,
Amadeu Griol,
Karim Ben Saddik,
Enrique Barrigón,
Sergio Fernández-Garrido,
Basilio Javier García,
Alejandro Martínez,
Víctor J. Gómez
Abstract:
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V substrates to keep its crystallinity and later transferred to silicon wafers for further processing. Here, an alternative promising route for the fabrication of op…
▽ More
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V substrates to keep its crystallinity and later transferred to silicon wafers for further processing. Here, an alternative promising route for the fabrication of optomechanical (OM) cavities on GaP epitaxially grown on nominally (001)-oriented Si is introduced by using a two-step process consisting of a low-temperature etching of GaP followed by selective etching of the underneath silicon. The low-temperature (-30 $^o$C) during the dry-etching of GaP hinders the lateral etching rate, preserving the pattern with a deviation between the design and the pattern in the GaP layer lower than 5 %, avoiding the complex process of transferring and bonding a GaP wafer to a silicon-on-insulator wafer. To demonstrate the quality and feasibility of the proposed fabrication route, suspended OM cavities are fabricated and experimentally characterized. The cavities show optical quality factors between 10$^3$ and 10$^4$, and localized mechanical resonances at frequencies around 3.1 GHz. Both optical and mechanical resonances are close to those previously reported on crystalline GaP structures. These results suggest a simple and low-cost way to build GaP-based photonic devices directly integrated on industry-standard Si(001) photonic wafers.
△ Less
Submitted 28 March, 2024;
originally announced March 2024.
-
Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator
Authors:
Fernando Martín-Romero,
Víctor Jesús Gómez
Abstract:
We present the design, simulation and optimization of a graphene-on-silicon nitride (GOSiN) integrated waveguide dual-mode electro-absorption modulator operating with a speed between 27-109 GHz and an energy consumption below 6 pJ/bit. This device individually modulates the TE$_0$ and TE$_1$ modes in a single-arm dual-mode waveguide with modulation depths up to 316 dB/cm and 273 dB/cm, respectivel…
▽ More
We present the design, simulation and optimization of a graphene-on-silicon nitride (GOSiN) integrated waveguide dual-mode electro-absorption modulator operating with a speed between 27-109 GHz and an energy consumption below 6 pJ/bit. This device individually modulates the TE$_0$ and TE$_1$ modes in a single-arm dual-mode waveguide with modulation depths up to 316 dB/cm and 273 dB/cm, respectively. It has promising applications in Multimode Division Multiplexing (MDM) systems, where single-mode modulation induces high losses and costs. We have started from the design of GOSiN TE$_0$ and TE$_1$ passive low-loss mode filters. Then, applying a gate voltage to graphene via transparent IHO electrodes, we have combined both filters and shown that the light absorption can be modulated to obtain four logical values in transmission: (0,0), (0,1), (1,0) and (1,1). Our proposed devices can potentially boost the development of efficient MDM systems for ultra-fast on-chip interconnections.
△ Less
Submitted 3 May, 2024; v1 submitted 26 January, 2024;
originally announced January 2024.
-
Plasma induced surface modification of sapphire and its influence on graphene grown by PECVD
Authors:
Miguel Sinusia Lozano,
Ignacio Bernat-Montoya,
Todora Ivanova Angelova,
Alberto Boscá Mojena,
Francisco J. Díaz-Fernández,
Miroslavna Kovylina,
Alejandro Martínez,
Elena Pinilla Cienfuegos,
Víctor J. Gómez
Abstract:
The catalyst-free synthesis of graphene on dielectrics prevents the damage induced by the transfer process. Although challenging, to master this synthesis would boost the integration of graphene on consumer electronics since defects hinder its optoelectronic properties. In this work, the influence of the different surface terminations of c-plane sapphire substrates on the synthesis of graphene via…
▽ More
The catalyst-free synthesis of graphene on dielectrics prevents the damage induced by the transfer process. Although challenging, to master this synthesis would boost the integration of graphene on consumer electronics since defects hinder its optoelectronic properties. In this work, the influence of the different surface terminations of c-plane sapphire substrates on the synthesis of graphene via plasma-enhanced chemical vapour deposition (PECVD) is studied. The different terminations of the sapphire surface are controlled by a plasma etching process. A design of experiments (DoE) procedure was carried out to evaluate the major effects governing the etching process of four different parameters: i.e. discharge power, time, pressure and gas employed. In the characterization of the substrate, two sapphire surface terminations were identified and characterized by means of contact angle measurements, being a hydrophilic (hydrophobic) surface the fingerprint of an Al- (OH-) terminated surface, respectively. The defects within the synthesized graphene were analysed by Raman spectroscopy. Notably, we found that the ID/IG ratio decreases for graphene grown on OH-terminated surfaces. Furthermore, two different regimes related to the nature of graphene defects were identified and depending on the sapphire terminated surface are bound either to vacancy or boundary like defects. Finally, studying the density of defects and the crystallite area, as well as their relationship with the sapphire surface termination paves the way for increasing the crystallinity of the synthesized graphene.
△ Less
Submitted 1 March, 2023;
originally announced March 2023.
-
Effect of different buffer layers on the quality of InGaN layers grown on Si
Authors:
V. J. Gómez,
J. Grandal,
A. Núñez-Cascajero,
F. B. Naranjo,
M. Varela,
M. A. Sánchez-García,
E. Calleja
Abstract:
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet e…
▽ More
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
△ Less
Submitted 29 August, 2019;
originally announced August 2019.
