Showing 1–14 of 14 results for author: Fuhrer, M S

Valley optoelectronics based on meta-waveguide photodetectors

Authors: Chi Li, Kaijian Xing, Wenhao Zhai, Luca Sortino, Andreas Tittl, Igor Aharonovich, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Qingdong Ou, Zhaogang Dong, Stefan A. Maier, Haoran Ren

Abstract: In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral photons, enabling ultrafast light-driven valleytronics. However, achieving fully integrated valley optoelectronics - incorporating on-chip generation, selective routing, and electrical readout of valley-dependent chiral ph… ▽ More In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral photons, enabling ultrafast light-driven valleytronics. However, achieving fully integrated valley optoelectronics - incorporating on-chip generation, selective routing, and electrical readout of valley-dependent chiral photons - remains an unresolved challenge. We present a valley-driven hybrid nanophotonic-optoelectronic circuit that integrates chirality-selective meta-waveguide photodetectors with transition metal dichalcogenides. At room temperature, our purposely designed meta-waveguide device generates near-unity valley-dependent chiral photons in the second harmonic generation from an encapsulated tungsten disulfide monolayer and selectively couples them to unidirectional waveguide modes, achieving an exceptional polarisation selectivity of 0.97. These valley-dependent waveguide modes were subsequently detected by atomically thin few-layer tungsten diselenide photodetectors, exclusively responsive to the above-bandgap upconverted photons, thereby enabling all-on-chip processing of valley-multiplexed images. Our demonstration bridges a critical gap in lightwave valleytronics, paving the way for compact, scalable valley information processing and fostering the development of light-based valleytronic quantum technologies. △ Less

Submitted 25 March, 2025; originally announced March 2025.

Comments: 21 pages, 4 figures

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

Authors: Kaijian Xing, Daniel McEwen, Weiyao Zhao, Abdulhakim Bake, David Cortie, Jingying Liu, Thi-Hai-Yen Vu, James Hone, Alastair Stacey, Mark T. Edmonds, Kenji Watanabe, Takashi Taniguchi, Qingdong Ou, Dong-Chen Qi, Michael S. Fuhrer

Abstract: Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place tran… ▽ More Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of pre-fabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any surface treatments or sacrificial layers. The technique enables transfer of large-scale arbitrary metal electrodes, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. The mechanical transfer of metal electrodes from diamond onto van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-sectional high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond-transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semi metal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to other applications such as ambipolar transistor and optoelectronics, paving the way for new device architectures and high-performance devices. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Sub-100-fs formation of dark excitons in monolayer WS2

Authors: Pavel V. Kolesnichenko, Lukas Wittenbecher, Qianhui Zhang, Run Yan Teh, Chandni Babu, Michael S. Fuhrer, Anders Mikkelsen, Donatas Zigmantas

Abstract: Two-dimensional semiconducting transition metal dichalcogenides (TMDs) are promising for optoelectronic applications due to their strongly bound excitons. While bright excitons have been thoroughly scrutinized, dark excitons are much less investigated as they are not observable with far-field spectroscopy. However, with their non-zero momenta, dark excitons are significant for applications requiri… ▽ More Two-dimensional semiconducting transition metal dichalcogenides (TMDs) are promising for optoelectronic applications due to their strongly bound excitons. While bright excitons have been thoroughly scrutinized, dark excitons are much less investigated as they are not observable with far-field spectroscopy. However, with their non-zero momenta, dark excitons are significant for applications requiring long-range transport or coupling to external fields. We access such dark excitons in WS2 monolayer using transient photoemission electron microscopy with sub-diffraction limited spatial resolution (75 nm) and exceptionally high temporal resolution (13 fs). Image time series of TMD flakes are recorded at several different fluences. We directly observe the ultrafast formation of dark K-Q excitons in monolayer WS2 occurring within 14-50 fs and follow their subsequent picosecond decay. We distinguish exciton dynamics between the interior and edges of the monolayer TMD and conclude that the long-term evolution of dark excitations is defect-mediated while intervalley scattering is not affected. △ Less

Submitted 6 August, 2024; v1 submitted 13 March, 2024; originally announced March 2024.

Comments: 25 pages, 3 figures, 1 supplementary

Floquet engineering in the presence of optically excited carriers

Authors: Mitchell A. Conway, Jonathan O. Tollerud, Thi-Hai-Yen Vu, Kenji Watanabe, Takashi Taniguchi, Michael S. Fuhrer, Mark T. Edmonds, Jeffrey A. Davis

Abstract: Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still be… ▽ More Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still being able to accurately resolve bandstructure changes. Here, we drive an AC-Stark effect in monolayer WS$_2$ using pulses with constant fluence but varying pulse duration (from 25-235~fs). With shorter pump pulses, the corresponding increase in peak intensity introduces additional carriers via two-photon absorption, leading to additional decoherence and peak broadening (which makes it difficult to resolve the AC-Stark shift). We use multidimensional coherent spectroscopy to create a coherent ensemble of excitons in monolayer WS$_2$ and measure the evolution of the coherence throughout the duration of the Floquet pump pulse. Changes to the amplitude of the macroscopic coherence quantifies the additional broadening. At the same time, the evolution of the average phase allows the instantaneous changes to the bandstructure to be quantified, and is not impacted by the additional broadening. This approach to measuring the evolution of Floquet-Bloch states demonstrates a means to quantify effective heating and non-adiabaticity caused by excited carriers, while at the same time resolving the coherent evolution of the bandstructure. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Journal ref: Physical Review B 109, 104302 (2024)

A volatile polymer stamp for large-scale, etching-free, and ultraclean transfer and assembly of two-dimensional materials and its heterostructures

Authors: Zhigao Dai, Yupeng Wang, Lu Liu, Junkai Deng, Wen-Xin Tang, Qingdong Ou, Ziyu Wang, Md Hemayet Uddin, Guangyuan Si, Qianhui Zhang, Wenhui Duan, Michael S. Fuhrer, Changxi Zheng

Abstract: The intact transfer and assembly of two-dimensional (2D) materials and their heterostructures are critical for their integration into advanced electronic and optical devices. Herein, we report a facile technique called volatile polymer stamping (VPS) to achieve efficient transfer of 2D materials and assembly of large-scale heterojunctions with clean interfaces. The central feature of the VPS techn… ▽ More The intact transfer and assembly of two-dimensional (2D) materials and their heterostructures are critical for their integration into advanced electronic and optical devices. Herein, we report a facile technique called volatile polymer stamping (VPS) to achieve efficient transfer of 2D materials and assembly of large-scale heterojunctions with clean interfaces. The central feature of the VPS technique is the use of volatile polyphthalaldehyde (PPA) together with hydrophobic polystyrene (PS). While PS enables the direct delamination of 2D materials from hydrophilic substrates owing to water intercalation, PPA can protect 2D materials from solution attack and maintain their integrity during PS removal. Thereafter, PPA can be completely removed by thermal annealing at 180 °C. The proposed VPS technique overcomes the limitations of currently used transfer techniques, such as chemical etching during the delamination stage, solution tearing during cleaning, and contamination from polymer residues. △ Less

Submitted 31 July, 2023; originally announced July 2023.

Journal ref: Materials Today Physics, 27, p.100834 (2022)

Effects of Floquet Engineering on the Coherent Exciton Dynamics in Monolayer WS$_2$

Authors: Mitchell A. Conway, Stuart K. Earl, Jack B. Muir, Thi-Hai-Yen Vu, Jonathan O. Tollerud, Kenji Watanabe, Takashi Taniguchi, Michael S. Fuhrer, Mark T. Edmonds, Jeffrey A. Davis

Abstract: Coherent optical manipulation of electronic bandstructures via Floquet Engineering is a promising means to control quantum systems on an ultrafast timescale. However, the ultrafast switching on/off of the driving field comes with questions regarding the limits of validity of the Floquet formalism, which is defined for an infinite periodic drive, and to what extent the transient changes can be driv… ▽ More Coherent optical manipulation of electronic bandstructures via Floquet Engineering is a promising means to control quantum systems on an ultrafast timescale. However, the ultrafast switching on/off of the driving field comes with questions regarding the limits of validity of the Floquet formalism, which is defined for an infinite periodic drive, and to what extent the transient changes can be driven adibatically. Experimentally addressing these questions has been difficult, in large part due to the absence of an established technique to measure coherent dynamics through the duration of the pulse. Here, using multidimensional coherent spectroscopy we explicitly excite, control, and probe a coherent superposition of excitons in the $K$ and $K^\prime$ valleys in monolayer WS$_2$. With a circularly polarized, red-detuned, pump pulse, the degeneracy of the $K$ and $K^\prime$ excitons can be lifted and the phase of the coherence rotated. We demonstrate phase rotations during the 100 fs driving pulse that exceed $π$, and show that this can be described by a combination of the AC-Stark shift of excitons in one valley and Bloch-Siegert shift of excitons in the opposite valley. Despite showing a smooth evolution of the phase that directly follows the intensity envelope of the pump pulse, the process is not perfectly adiabatic. By measuring the magnitude of the macroscopic coherence as it evolves before, during, and after the pump pulse we show that there is additional decoherence caused by power broadening in the presence of the pump. This non-adiabaticity may be a problem for many applications, such as manipulating q-bits in quantum information processing, however these measurements also suggest ways such effects can be minimised or eliminated. △ Less

Submitted 29 January, 2023; originally announced January 2023.

Journal ref: ACS Nano 17, 14545 (2023)

Influence of direct deposition of dielectric materials on the optical response of monolayer WS$_2$

Authors: Tinghe Yun, Matthias Wurdack, Maciej Pieczarka, Semonti Bhattacharyya, Qingdong Ou, Christian Notthoff, Patrick Kluth, Michael S. Fuhrer, Andrew G. Truscott, Eliezer Estrecho, Elena A. Ostrovskaya

Abstract: The integration of two-dimensional transition metal dichalcogenide crystals (TMDCs) into a dielectric environment is critical for optoelectronic and photonic device applications. Here, we investigate the effects of direct deposition of different dielectric materials (Al$_2$O$_3$, SiO$_2$, SiN$_x$) onto atomically thin (monolayer) TMDC WS$_2$ on its optical response. Atomic layer deposition (ALD),… ▽ More The integration of two-dimensional transition metal dichalcogenide crystals (TMDCs) into a dielectric environment is critical for optoelectronic and photonic device applications. Here, we investigate the effects of direct deposition of different dielectric materials (Al$_2$O$_3$, SiO$_2$, SiN$_x$) onto atomically thin (monolayer) TMDC WS$_2$ on its optical response. Atomic layer deposition (ALD), electron beam evaporation (EBE), plasma enhanced chemical vapour deposition (PECVD), and magnetron sputtering methods of material deposition are investigated. The photoluminescence (PL) measurements reveal quenching of the excitonic emission after all deposition processes. The reduction in neutral exciton PL is linked to the increased level of charge doping and associated rise of the trion emission, and/or the localized (bound) exciton emission. Furthermore, Raman spectroscopy allows us to clearly correlate the observed changes of excitonic emission with the increased levels of lattice disorder and defects. Overall, the EBE process results in the lowest level of doping and defect densities and preserves the spectral weight of the exciton emission in the PL, as well as the exciton oscillator strength. Encapsulation with ALD appears to cause chemical changes, which makes it distinct from all other techniques. Sputtering is revealed as the most aggressive deposition method for WS$_2$, fully quenching its optical response. Our results demonstrate and quantify the effects of direct deposition of dielectric materials onto monolayer WS$_2$, which can provide a valuable guidance for the efforts to integrate monolayer TMDCs into functional optoelectronic devices. △ Less

Submitted 20 April, 2021; originally announced April 2021.

Hybridized hyperbolic surface phonon polaritons at α-MoO3 and polar dielectric interfaces

Authors: Qing Zhang, Qingdong Ou, Guangwei Hu, Jingying Liu, Zhigao Dai, Michael S. Fuhrer, Qiaoliang Bao, Cheng-Wei Qiu

Abstract: Surface phonon polaritons (SPhPs) in polar dielectrics offer new opportunities for infrared nanophotonics due to sub-diffraction confinement with low optical losses. Though the polaritonic field confinement can be significantly improved by modifying the dielectric environment, it is challenging to break the fundamental limits in photon confinement and propagation behavior of SPhP modes. In particu… ▽ More Surface phonon polaritons (SPhPs) in polar dielectrics offer new opportunities for infrared nanophotonics due to sub-diffraction confinement with low optical losses. Though the polaritonic field confinement can be significantly improved by modifying the dielectric environment, it is challenging to break the fundamental limits in photon confinement and propagation behavior of SPhP modes. In particular, as SPhPs inherently propagate isotropically in these bulk polar dielectrics, how to collectively realize ultra-large field confinement, in-plane hyperbolicity and unidirectional propagation remains elusive. Here, we report an approach to solve the aforementioned issues of bulk polar dielectric's SPhPs at one go by constructing a heterostructural interface between biaxial van der Waals material (e.g., MoO3) and bulk polar dielectric (e.g., SiC, AlN, and GaN). Due to anisotropy-oriented mode couplings at the interface, the hybridized SPhPs with a large confinement factor (>100) show in-plane hyperbolicity that has been switched to the orthogonal direction as compared to that in natural MoO3. More interestingly, this proof of concept allows steerable, angle-dependent and unidirectional polariton excitation by suspending MoO3 on patterned SiC air cavities. Our finding exemplifies a generalizable framework to manipulate the flow of nano-light and engineer unusual polaritonic responses in many other hybrid systems consisting of van der Waals materials and bulk polar dielectrics. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Progress in epitaxial thin-film Na3Bi as a topological electronic material

Authors: I. Di Bernardo, J. Hellerstedt, C. Liu, G. Akhgar, W. Wu, S. A. Yang, D. Culcer, S. -K. Mo, S. Adam, M. T. Edmonds, M. S. Fuhrer

Abstract: Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising to… ▽ More Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising topological electronic devices such as topological transistors. In this review, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large-area thin films synthesised via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semi-classical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field driven topological phase transitions, are addressed, with an outlook towards current challenges and expected future progress. △ Less

Submitted 1 September, 2020; originally announced September 2020.

Journal ref: Advanced Materials 33, 2005897 (2021)

Quantum Transport in Air-stable Na3Bi Thin Films

Authors: Chang Liu, Golrokh Akhgar, James L. Collins, Jack Hellerstedt, Shaffique Adam, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films pas… ▽ More Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) capping layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure. △ Less

Submitted 29 March, 2020; originally announced March 2020.

Journal ref: ACS Appl. Mater. Interfaces 12, 31, 35542 (2020)

Multidimensional Analysis of Excitonic Spectra of Monolayers of Tungsten Disulphide: Towards Computer Aided Identification of Structural and Environmental Perturbations of 2D Materials

Authors: Pavel V. Kolesnichenko, Qianhui Zhang, Changxi Zheng, Michael S. Fuhrer, Jeffrey A. Davis

Abstract: Despite 2D materials holding great promise for a broad range of applications, the proliferation of devices and their fulfillment of real-life demands are still far from being realized. Experimentally obtainable samples commonly experience a wide range of perturbations (ripples and wrinkles, point and line defects, grain boundaries, strain field, doping, water intercalation, oxidation, edge reconst… ▽ More Despite 2D materials holding great promise for a broad range of applications, the proliferation of devices and their fulfillment of real-life demands are still far from being realized. Experimentally obtainable samples commonly experience a wide range of perturbations (ripples and wrinkles, point and line defects, grain boundaries, strain field, doping, water intercalation, oxidation, edge reconstructions) significantly deviating the properties from idealistic models. These perturbations, in general, can be entangled or occur in groups with each group forming a complex perturbation making the interpretations of observable physical properties and the disentanglement of simultaneously acting effects a highly non-trivial task even for an experienced researcher. Here we generalise statistical correlation analysis of excitonic spectra of monolayer WS2, acquired by hyperspectral absorption and photoluminescence imaging, to a multidimensional case, and examine multidimensional correlations via unsupervised machine learning algorithms. Using principle component analysis we are able to identify 4 dominant components that are correlated with tensile strain, disorder induced by adsorption or intercalation of environmental molecules, multi-layer regions and charge doping, respectively. This approach has the potential to determine the local environment of WS2 monolayers or other 2D materials from simple optical measurements, and paves the way towards advanced, machine-aided, characterisation of monolayer matter. △ Less

Submitted 28 July, 2020; v1 submitted 4 March, 2020; originally announced March 2020.

Comments: 12 pages, 4 figures, supplementary materials

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Authors: Fuyou Liao, Zhongxun Guo, Yin Wang, Yufeng Xie, Simeng Zhang, Yaochen Sheng, Hongwei Tang, Zihan Xu, Antoine Riaud, Peng Zhou, Jing Wan, Michael S. Fuhrer, Xiangwei Jiang, David Wei Zhang, Yang Chai, Wenzhong Bao

Abstract: In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structu… ▽ More In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics. △ Less

Submitted 17 December, 2019; originally announced December 2019.

Disentangling the effects of doping, strain and defects in monolayer WS2 by optical spectroscopy

Authors: Pavel V. Kolesnichenko, Qianhui Zhang, Changxi Zheng, Michael S. Fuhrer, Jeffrey A. Davis

Abstract: Monolayers of transition metal dichalcogenides (TMdC) are promising candidates for realization of a new generation of optoelectronic devices. The optical properties of these two-dimensional materials, however, vary from flake to flake, or even across individual flakes, and change over time, all of which makes control of the optoelectronic properties challenging. There are many different perturbati… ▽ More Monolayers of transition metal dichalcogenides (TMdC) are promising candidates for realization of a new generation of optoelectronic devices. The optical properties of these two-dimensional materials, however, vary from flake to flake, or even across individual flakes, and change over time, all of which makes control of the optoelectronic properties challenging. There are many different perturbations that can alter the optical properties, including charge doping, defects, strain, oxidation, and water intercalation. Identifying which perturbations are present is usually not straightforward and requires multiple measurements using multiple experimental modalities, which presents barriers when attempting to optimise preparation of these materials. Here, we apply highresolution photoluminescence and differential reflectance hyperspectral imaging in situ to CVD-grown WS2 monolayers. By combining these two optical measurements and using a statistical correlation analysis we are able to disentangle three contributions modulating optoelectronic properties of these materials: electron doping, strain and defects. In separating these contributions, we also observe that the B-exciton energy is less sensitive to variations in doping density than A-excitons. △ Less

Submitted 18 September, 2019; originally announced September 2019.

Comments: 27 pages, 5 figures

Oxidation of Monolayer WS$_{2}$ in Ambient is a Photoinduced Process

Authors: Jimmy C. Kotsakidis, Quianhui Zhang, Amadeo L. Vazquez de Parga, Marc Currie, Kristian Helmerson, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We have studied the ambient air oxidation of chemical vapor deposition (CVD) grown monolayers of the semiconducting transition metal dichalcogenide (S-TMD) WS$_{2}$ using optical microscopy, laser scanning confocal microscopy (LSCM), photoluminescence (PL) spectroscopy, and atomic force microscopy (AFM). Monolayer WS$_{2}$ exposed to ambient conditions in the presence of light (typical laboratory… ▽ More We have studied the ambient air oxidation of chemical vapor deposition (CVD) grown monolayers of the semiconducting transition metal dichalcogenide (S-TMD) WS$_{2}$ using optical microscopy, laser scanning confocal microscopy (LSCM), photoluminescence (PL) spectroscopy, and atomic force microscopy (AFM). Monolayer WS$_{2}$ exposed to ambient conditions in the presence of light (typical laboratory ambient light for weeks, or typical PL spectroscopy map), exhibits damage due to oxidation which can be detected with the LSCM and AFM; though may not be evident in conventional optical microscopy due to poorer contrast and resolution. Additionally, this oxidation was not random, and correlated with 'high-symmetry' and red-shifted areas in the PL spectroscopy map - areas thought to contain a higher concentration of sulfur vacancies. In contrast, samples kept in ambient and darkness showed no signs of oxidation for up to 10 months. Low-irradiance/fluence experiments showed that samples subjected to excitation energies at or above the trion excitation energy (532 nm/2.33 eV and 660 nm/1.88 eV) oxidized in as little as 7 days, even for irradiances and fluences eight and four orders of magnitude lower (respectively) than previously reported. No significant oxidation was observed for 760 nm/1.63 eV light exposure, which lies below the trion excitation energy in WS$_{2}$. The strong wavelength dependence and apparent lack of irradiance dependence suggests that ambient oxidation of WS$_{2}$ is initiated by photon-mediated electronic band transitions, that is, photo-oxidation. These findings have important implications for prior, present and future studies concerning S-TMDs measured, stored or manipulated in ambient conditions. △ Less

Submitted 3 July, 2019; v1 submitted 2 June, 2019; originally announced June 2019.

Comments: 35 pages, 3 figures, 1 table, submitted to ACS Nano Letters