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Terahertz radiation of jerk photocurrent
Authors:
Bernardo S. Mendoza,
Benjamin M. Fregoso
Abstract:
We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of $10^{14}$ mA/V$^3$s$^2$ in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe and SnS. We show that the detailed knowledge of this tensor and its large value in single-layer GeS, GeSe, SnSe and SnS…
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We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of $10^{14}$ mA/V$^3$s$^2$ in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe and SnS. We show that the detailed knowledge of this tensor and its large value in single-layer GeS, GeSe, SnSe and SnS make it possible to predict the magnitude and angle of rotation of polarization of intense terahertz pulses generated in photoconductive switches and point to alternative functionalities of these devices.
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Submitted 9 November, 2020; v1 submitted 1 March, 2020;
originally announced March 2020.
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Injection current in ferroelectric group-IV monochalcogenide monolayers
Authors:
Suman Raj Panday,
Salvador Barraza-Lopez,
Tonatiuh Rangel,
Benjamin M. Fregoso
Abstract:
We study the injection current response tensor (also known as circular photogalvanic effect or ballistic current) in ferrolectric monolayer GeS, GeSe, SnS, and SnSe. We find that the injection current is perpendicular to the spontaneous in-plane polarization and could reach peak (bulk) values of the order of $10^{10}$A/V$^{2}$s in the visible spectrum. The magnitude of the injection current is the…
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We study the injection current response tensor (also known as circular photogalvanic effect or ballistic current) in ferrolectric monolayer GeS, GeSe, SnS, and SnSe. We find that the injection current is perpendicular to the spontaneous in-plane polarization and could reach peak (bulk) values of the order of $10^{10}$A/V$^{2}$s in the visible spectrum. The magnitude of the injection current is the largest reported in the literature to date for a two dimensional material. To rationalize the large injection current, we correlate the injection current spectrum with the joint density of states, electric polarization, strain, etc. We find that various factors such as anisotropy, in-plane polarization and wave function delocalization are important in determining the injection current tensor in these materials. We also find that compression along the polar axis can increase the injection current (or change its sign), and hence strain can be an effective control knob for their nonlinear optical response. Conversely, the injection current can be a sensitive probe of the crystal structure.
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Submitted 12 November, 2019; v1 submitted 15 November, 2018;
originally announced November 2018.
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Jerk current: A novel bulk photovoltaic effect
Authors:
Benjamin M. Fregoso,
Rodrigo A. Muniz,
J. E. Sipe
Abstract:
We investigate a physical divergence of the third order polarization susceptibility representing a photoinduced current in biased crystalline insulators. This current grows quadratically with illumination time in the absence of momentum relaxation and saturation; we refer to it as the \textit{jerk current}. Two contributions to the current are identified. The first is a hydrodynamic acceleration o…
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We investigate a physical divergence of the third order polarization susceptibility representing a photoinduced current in biased crystalline insulators. This current grows quadratically with illumination time in the absence of momentum relaxation and saturation; we refer to it as the \textit{jerk current}. Two contributions to the current are identified. The first is a hydrodynamic acceleration of optically injected carriers by the static electric field, and the second is the change in the carrier injection rate in the presence of the static electric field. The jerk current can have a component perpendicular to the static field, a feature not captured by standard hydrodynamic descriptions of carriers in electric fields. We suggest an experiment to detect the jerk current and some of its interesting features.
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Submitted 28 October, 2018; v1 submitted 11 April, 2018;
originally announced April 2018.
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Strong second harmonic generation in two-dimensional ferroelectric IV-monochalcogenides
Authors:
Suman Raj Panday,
Benjamin M. Fregoso
Abstract:
The two-dimensional ferroelectrics GeS, GeSe, SnS and SnSe are expected to have large spontaneous in-plane electric polarization and enhanced shift-current response. Using density functional methods, we show that these materials also exhibit the largest effective second harmonic generation reported so far. It can reach magnitudes up to $10$ nm/V which is about an order of magnitude larger than tha…
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The two-dimensional ferroelectrics GeS, GeSe, SnS and SnSe are expected to have large spontaneous in-plane electric polarization and enhanced shift-current response. Using density functional methods, we show that these materials also exhibit the largest effective second harmonic generation reported so far. It can reach magnitudes up to $10$ nm/V which is about an order of magnitude larger than that of prototypical GaAs. To rationalize this result we model the optical response with a simple one-dimensional two-band model along the spontaneous polarization direction. Within this model the second-harmonic generation tensor is proportional to the shift-current response tensor. The large shift current and second harmonic responses of GeS, GeSe, SnS and SnSe make them promising non-linear materials for optoelectronic applications.
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Submitted 29 September, 2017; v1 submitted 1 July, 2017;
originally announced July 2017.
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Design principles for shift current photovoltaics
Authors:
Ashley M. Cook,
Benjamin M. Fregoso,
Fernando de Juan,
Sinisa Coh,
Joel E. Moore
Abstract:
While the basic principles and limitations of conventional solar cells are well understood, relatively little attention has gone toward maximizing the potential efficiency of photovoltaic devices based on shift currents. In this work, we outline simple design principles for the optimization of shift currents for frequencies near the band gap, derived from the analysis of a general effective model.…
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While the basic principles and limitations of conventional solar cells are well understood, relatively little attention has gone toward maximizing the potential efficiency of photovoltaic devices based on shift currents. In this work, we outline simple design principles for the optimization of shift currents for frequencies near the band gap, derived from the analysis of a general effective model. The use of a novel sum rule allows us to express the band edge shift current in terms of a few model parameters and to show it depends explicitly on wavefunctions via Berry connections in addition to standard band structure. We use our approach to identify two new classes of shift current photovoltaics, ferroelectric polymer films and single-layer orthorhombic monochalcogenides such as GeS. We introduce tight-binding models for these systems, and show that they exhibit the largest shift current responsivities at the band edge reported so far. Moreover, exploring the parameter space of these models we find photoresponsivities that can exceed $100$ mA/W. Our results show how the study of the shift current via effective models allows one to improve the possible efficiency of devices based on this mechanism and better grasp their potential to compete with conventional solar cells.
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Submitted 20 January, 2017; v1 submitted 30 July, 2015;
originally announced July 2015.
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Magnetization signatures of light-induced quantum Hall edge states
Authors:
Jan P. Dahlhaus,
Benjamin M. Fregoso,
Joel E. Moore
Abstract:
Circularly polarised light opens a gap in the Dirac spectrum of graphene and topological insulator (TI) surfaces, thereby inducing a quantum Hall-like phase. We propose to detect the accompanying edge states and their current by the magnetic field they produce. The topological nature of the edge states is reflected in the mean orbital magnetization of the sample, which shows a universal linear dep…
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Circularly polarised light opens a gap in the Dirac spectrum of graphene and topological insulator (TI) surfaces, thereby inducing a quantum Hall-like phase. We propose to detect the accompanying edge states and their current by the magnetic field they produce. The topological nature of the edge states is reflected in the mean orbital magnetization of the sample, which shows a universal linear dependence as a function of a generalized chemical potential - independent of the driving details and the properties of the material. The proposed protocol overcomes several typically encountered problems in the realization and measurement of Floquet phases, including the destructive effects of phonons and coupled electron baths and provides a way to occupy the induced edge states selectively. We estimate practical experimental parameters and conclude that the magnetization signature of the Floquet topological phase may be detectable with current techniques.
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Submitted 24 June, 2015; v1 submitted 28 August, 2014;
originally announced August 2014.
