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Deterministic multi-level spin orbit torque switching using He+ microscopy patterning
Authors:
Jinu Kurian,
Aleena Joseph,
Salia Cherifi-Hertel,
Ciaran Fowley,
Gregor Hlawacek,
Peter Dunne,
Michelangelo Romeo,
Gwenaël Atcheson,
J. M. D. Coey,
Bernard Doudin
Abstract:
He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with full deterministic control of the position and order of the individual switching elements. Key pattern design parameters are specified, opening a way to scalabl…
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He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with full deterministic control of the position and order of the individual switching elements. Key pattern design parameters are specified, opening a way to scalable multilevel switching devices.
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Submitted 4 January, 2023;
originally announced January 2023.
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A photonic platform hosting telecom photon emitters in silicon
Authors:
Michael Hollenbach,
Nagesh S. Jagtap,
Ciarán Fowley,
Juan Baratech,
Verónica Guardia-Arce,
Ulrich Kentsch,
Anna Eichler-Volf,
Nikolay V. Abrosimov,
Artur Erbe,
ChaeHo Shin,
Hakseong Kim,
Manfred Helm,
Woo Lee,
Georgy V. Astakhov,
Yonder Berencén
Abstract:
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a…
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Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.
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Submitted 5 December, 2021;
originally announced December 2021.
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Spin polarization and magnetotransport properties of systematically disordered $\mathrm{Fe}_{60}\mathrm{Al}_{40}$ thin films
Authors:
Kiril Borisov,
Jonathan Ehrler,
Ciaran Fowley,
Benedikt Eggert,
Heiko Wende,
Steffen Cornelius,
Kay Potzger,
Juergen Lindner,
Juergen Fassbender,
Rantej Bali,
Plamen Stamenov
Abstract:
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 n…
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We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 nm thick films irradiated with 2 $\cdot$ 10$^{16}$ ions/cm$^2$ at 30 keV. An interesting divergence in the trends of the magnetization and SHA is observed for low disorder concentrations. The high spin polarization and its broad tunability range make ion-irradiated Fe$_{60}$Al$_{40}$ a promising material for application in spin electronic devices.
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Submitted 30 April, 2021;
originally announced April 2021.
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Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication
Authors:
Ewa Kowalska,
Akio Fukushima,
Volker Sluka,
Ciarán Fowley,
Attila Kákay,
Yuriy Aleksandrov,
Jürgen Lindner,
Jürgen Fassbender,
Shinji Yuasa,
Alina M. Deac
Abstract:
Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF) oscillators for wireless communication. Currently, the structure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunnel junction (MTJ) with a fixed layer…
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Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF) oscillators for wireless communication. Currently, the structure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunnel junction (MTJ) with a fixed layer magnetized in the plane of the layers and a free layer magnetized perpendicular to the plane. This structure allows for most of the tunnel magnetoresistance (TMR) to be converted into output power. Here, we experimentally and theoretically demonstrate that the main mechanism sustaining steady-state precession in such structures is the angular dependence of the magnetoresistance. The TMR of such devices is known to exhibit a broken-linear dependence versus the applied bias. Our results show that the TMR bias dependence effectively quenches spin-transfer-driven precession and introduces a non-monotonic frequency dependence at high applied currents. Thus we expect the bias dependence of the TMR to have an even more dramatic effect in MTJs with Mn-Ga-based free layers, which could be used to design wireless oscillators extending towards the THz gap, but have been experimentally shown to exhibit a non-trivial TMR bias dependence.
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Submitted 17 August, 2018;
originally announced August 2018.
