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Polarization and resistive switching in epitaxial 2 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ tunnel junctions
Authors:
Milena Cervo Sulzbach,
Huan Tan,
Saul Estandia,
Jaume Gazquez,
Florencio Sanchez,
Ignasi Fina,
Josep Fontcuberta
Abstract:
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementatio…
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In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementation. Here, we show that ferroelectric and electroresistive switching can be observed in ultrathin 2 nm epitaxial Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) tunnel junctions in large area capacitors (${\approx} 300μm^2$). We observe that the resistance area product is reduced to about 160 $Ω{\cdot}$cm$^2$ and 65 $Ω{\cdot}$cm$^2$ for OFF and ON resistance states, respectively. These values are two orders of magnitude smaller than those obtained in equivalent 5 nm HZO tunnel devices while preserving a similar OFF/ON resistance ratio (210 ${\%}$). The devices show memristive and spike-timing-dependent plasticity (STDP) behavior and good retention. Electroresistance and ferroelectric loops closely coincide, signaling ferroelectric switching as a driving mechanism for resistance change.
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Submitted 23 August, 2021;
originally announced August 2021.
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Flexible antiferromagnetic FeRh tapes as memory elements
Authors:
Ignasi Fina,
Nico Dix,
Enric Menéndez,
Anna Crespi,
Michael Foerster,
Lucia Aballe,
Florencio Sánchez,
Josep Fontcuberta
Abstract:
The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displa…
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The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 oC. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05 %) is used to illustrate data writing/reading capability.
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Submitted 16 February, 2021;
originally announced February 2021.
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Strain and voltage control of magnetic and electric properties of FeRh films
Authors:
Ignasi Fina,
Josep Fontcuberta
Abstract:
FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and it can be sensitively modulated by composition and external parameters, including pressure and strain. Consequently, thin films of FeRh have received attention for applications in spintronics, antiferromagnetic spintroni…
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FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and it can be sensitively modulated by composition and external parameters, including pressure and strain. Consequently, thin films of FeRh have received attention for applications in spintronics, antiferromagnetic spintronics and sensing. Interestingly, the extreme sensitivity of its properties to strain has created expectations for energy friendly voltage-control of the magnetic state of FeRh, with a number of potential applications at the horizon. Here, after summarizing the current understanding of strain effects on the magnetic properties of FeRh thin films, we review achievements on exploiting piezoelectric substrates for in-operando tuning of their magneto-electric properties. We end with a brief summary and an outlook for future initiatives.
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Submitted 13 November, 2019;
originally announced November 2019.
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Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
Authors:
J. Lyu,
I. Fina,
R. Bachelet,
G. Saint-Girons,
S. Estandia,
J. Gazquez,
J. Fontcuberta,
F. Sanchez
Abstract:
SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4…
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SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4 V present long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates paves the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2.
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Submitted 5 June, 2019;
originally announced June 2019.
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Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
Authors:
Jike Lyu,
Ignasi Fina,
Josep Fontcuberta,
Florencio Sánchez
Abstract:
Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years…
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Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years for writing field of around 5 MV/cm, and the capacitors show endurance up to 1E9 cycles for writing voltage of around 4 MV/cm. It is found that the formation of the orthorhombic ferroelectric phase depends critically on the bottom electrode, being achieved on La0.67Sr0.33MnO3 but not on LaNiO3. The demonstration of excellent ferroelectric properties in epitaxial films of Hf0.5Zr0.5O2 on Si(001) is relevant towards fabrication of devices that require homogeneity in the nanometer scale, as well as for better understanding of the intrinsic properties of this promising ferroelectric oxide.
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Submitted 14 February, 2019;
originally announced February 2019.
