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Ultra-thin transistors and circuits for conformable electronics
Authors:
Federico Parenti,
Riccardo Sargeni,
Elisabetta Dimaggio,
Francesco Pieri,
Filippo Fabbri,
Tommaso Losi,
Fabrizio Antonio Viola,
Arindam Bala,
Zhenyu Wang,
Andras Kis,
Mario Caironi,
Gianluca Fiori
Abstract:
Adapting electronics to perfectly conform to non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic and scientific interest ranging from health to robotics, wearable electronics, human machine interface and Internet of Things. The key to success lies in defining a technology that can lead to the fabr…
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Adapting electronics to perfectly conform to non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic and scientific interest ranging from health to robotics, wearable electronics, human machine interface and Internet of Things. The key to success lies in defining a technology that can lead to the fabrication of ultra-thin devices while exploiting materials that are ultimately thin, with high mechanical flexibility and excellent electrical properties. Here, we report a hybrid approach for the definition of high-performance, ultra-thin and conformable electronic devices and circuits, based on the integration of ultimately thin semiconducting transition metal dichalcogenides (TMDC), i.e., MoS2, with organic gate dielectric material, i.e., polyvinyl formal (PVF) combined with the ink-jet printing of conductive PEDOT:PSS ink for electrodes definition. Through this cost-effective, fully bottom-up and solution-based approach, transistors and simple digital and analogue circuits are fabricated by a sequential stacking of ultrathin (nanometer) layers on a few micron thick polyimide substrate, which guarantees the high flexibility mandatory for the targeted applications.
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Submitted 6 December, 2024; v1 submitted 4 June, 2024;
originally announced June 2024.
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CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors
Authors:
Daniel S. Schneider,
Leonardo Lucchesi,
Eros Reato,
Zhenyu Wang,
Agata Piacentini,
Jens Bolten,
Damiano Marian,
Enrique G. Marin,
Aleksandra Radenovic,
Zhenxing Wang,
Gianluca Fiori,
Andras Kis,
Giuseppe Iannaccone,
Daniel Neumaier,
Max C. Lemme
Abstract:
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metal…
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Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$Ω$$μ$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits.
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Submitted 5 April, 2024; v1 submitted 3 April, 2023;
originally announced April 2023.
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A Ballistic Two-Dimensional Lateral Heterojunction Bipolar Transistor
Authors:
Leonardo Lucchesi,
Gaetano Calogero,
Gianluca Fiori,
Giuseppe Iannaccone
Abstract:
We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode…
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We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode. As typical of bipolar transistors, the collector current undergoes a tenfold increase for each 60 mV increase of the base voltage over several orders of magnitude at room temperature, without sophisticated optimization of the electrostatics. We present a detailed investigation based on self-consistent simulations of electrostatics and quantum transport for both electron and holes of a pnp device using MoS$_2$ for the 10-nm base and WSe$_2$ for emitter and collector. Our three-terminal device simulations confirm the working principle and a large current modulation I$_\text{ON}$/I$_\text{OFF}\sim 10^8$ for $ΔV_{\rm EB}=0.5$ V. Assuming ballistic transport, we are able to achieve a current gain $β\sim$ 10$^4$ over several orders of magnitude of collector current and a cutoff frequency up to the THz range. Exploration of the rich world of bipolar nanoscale device concepts in 2D materials is promising for their potential applications in electronics and optoelectronics.
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Submitted 24 March, 2021;
originally announced March 2021.
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Naturally-Degradable Photonic Devices with Transient Function by Heterostructured Waxy-Sublimating and Water-Soluble Materials
Authors:
Andrea Camposeo,
Francesca D'Elia,
Alberto Portone,
Francesca Matino,
Matteo Archimi,
Silvia Conti,
Gianluca Fiori,
Dario Pisignano,
Luana Persano
Abstract:
Combined dry-wet transient materials and devices are introduced, which are based on water-dissolvable dye-doped polymers layered onto non-polar cyclic hydrocarbon sublimating substrates. Light-emitting heterostructures showing amplified spontaneous emission are used as illumination sources for speckle-free, full-field imaging, and transient optical labels are realized that incorporate QR codes wit…
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Combined dry-wet transient materials and devices are introduced, which are based on water-dissolvable dye-doped polymers layered onto non-polar cyclic hydrocarbon sublimating substrates. Light-emitting heterostructures showing amplified spontaneous emission are used as illumination sources for speckle-free, full-field imaging, and transient optical labels are realized that incorporate QR codes with stably encoded information. The transient behavior is also studied at the microscopic scale, highlighting the real time evolution of material domains in the sublimating compound. Finally, the exhausted components are fully soluble in water thus being naturally degradable.
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Submitted 8 December, 2020;
originally announced December 2020.
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Flexible One-Dimensional Metal-Insulator-Graphene Diode
Authors:
Zhenxing Wang,
Burkay Uzlu,
Mehrdad Shaygan,
Martin Otto,
Mário Ribeiro,
Enrique González Marín,
Giuseppe Iannaccone,
Gianluca Fiori,
Mohamed Saeed Elsayed,
Renato Negra,
Daniel Neumaier
Abstract:
In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry deliv…
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In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.
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Submitted 18 March, 2020;
originally announced March 2020.
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Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper
Authors:
Silvia Conti,
Lorenzo Pimpolari,
Gabriele Calabrese,
Robyn Worsley,
Subimal Majee,
Dmitry K. Polyushkin,
Matthias Paur,
Simona Pace,
Dong Hoon Keum,
Filippo Fabbri,
Giuseppe Iannaccone,
Massimo Macucci,
Camilla Coletti,
Thomas Mueller,
Cinzia Casiraghi,
Gianluca Fiori
Abstract:
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, c…
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Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.
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Submitted 14 October, 2020; v1 submitted 14 November, 2019;
originally announced November 2019.
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Analogue two-dimensional semiconductor electronics
Authors:
Dmitry K. Polyushkin,
Stefan Wachter,
Lukas Mennel,
Maksym Paliy,
Giuseppe Iannaccone,
Gianluca Fiori,
Daniel Neumaier,
Barbara Canto,
Thomas Mueller
Abstract:
While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital cou…
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While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital counterparts - pushed for research into alternative materials. In recent years two-dimensional materials have received considerable research interest, fitting their promising properties for future electronics. In this work we demonstrate an operational amplifier - a basic building block of analogue electronics - using a two-dimensional semiconductor, namely molybdenum disulfide, as active material. Our device is capable of stable operation with good performance, and we demonstrate its use in feedback circuits such as inverting amplifiers, integrators, log amplifiers, and transimpedance amplifiers.
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Submitted 31 August, 2019;
originally announced September 2019.
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All-2D Material Inkjet-Printed Capacitors: Towards Fully-Printed Integrated Circuits
Authors:
Robyn Worsley,
Lorenzo Pimpolari,
Daryl McManus,
Ning Ge,
Robert Ionescu,
Jarrid A. Wittkopf,
Adriana Alieva,
Giovanni Basso,
Massimo Macucci,
Giuseppe Iannaccone,
Kostya S. Novoselov,
Helen Holder,
Gianluca Fiori,
Cinzia Casiraghi
Abstract:
A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet…
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A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, non-contact approach, which also allows for device design flexibility, produces no material wastage and offers compatibility with almost any surface of interest, including flexible substrates. In this work we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 \pm 0.3 nF cm^(-2) for a dielectric thickness of \sim 3 μm and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 \pm 1.7. The inkjet printed hBN dielectric has a breakdown field of 1.9 \pm 0.3 MV cm^(-1). Fully printed capacitors with sub-/mu m hBN layer thicknesses have also been demonstrated. The capacitors are then exploited in two fully printed demonstrators: a resistor-capacitor (RC) low-pass filter and a graphene-based field effect transistor.
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Submitted 20 November, 2018;
originally announced December 2018.
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Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering
Authors:
Vikram Passi,
Amit Gahoi,
Enrique G. Marin,
Teresa Cusati,
Alessandro Fortunelli,
Giuseppe Iannaccone,
Gianluca Fiori,
Max C. Lemme
Abstract:
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific contact resistivity is reduced from 1372 Ωm for a device with surface contacts to 456 Ωm when contacts are patterned with holes. Electrostatic doping o…
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A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific contact resistivity is reduced from 1372 Ωm for a device with surface contacts to 456 Ωm when contacts are patterned with holes. Electrostatic doping of the graphene further reduces contact resistivity from 519 Ωm to 45 Ωm, a substantial decrease of 91%. The experimental results are supported and understood via a multi-scale numerical model, based on density-functional-theory calculations and transport simulations. The data is analyzed with regards to the edge perimeter and hole-to-graphene ratio, which provides insights into optimized contact geometries. The current work thus indicates a reliable and reproducible approach for fabricating low resistance contacts in graphene devices. We provide a simple guideline for contact design that can be exploited to guide graphene and 2D material contact engineering.
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Submitted 12 July, 2018;
originally announced July 2018.
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High Performance Metal-Insulator-Graphene Diodes for Radio Frequency Power Detection Application
Authors:
Mehrdad Shaygan,
Zhenxing Wang,
Mohamed Saeed Elsayed,
Martin Otto,
Giuseppe Iannaccone,
Ahmed Hamed Ghareeb,
Gianluca Fiori,
Renato Negra,
Daniel Neumaier
Abstract:
Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. Th…
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Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A/cm^2, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V^{-1}, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V/W at 2.4 GHz and 1.1 V/W at 49.4 GHz.
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Submitted 26 April, 2018;
originally announced April 2018.
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Inkjet Printed 2D-Crystal Based Strain Gauges on Paper
Authors:
C. Casiraghi,
M. Macucci,
K. Parvez,
R. Worsley,
Y. Shin,
F. Bronte,
C. Borri,
M. Paggi,
G. Fiori
Abstract:
We present an investigation of inkjet printed strain gauges based on two-dimensional (2D) materials. The technology leverages water-based and biocompatible inks to fabricate strain measurement devices on flexible substrates such as paper. We demonstrate that the device performance and sensitivity are strongly dependent on the printing parameter (i.e., drop- spacing, number of printing passes, etc.…
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We present an investigation of inkjet printed strain gauges based on two-dimensional (2D) materials. The technology leverages water-based and biocompatible inks to fabricate strain measurement devices on flexible substrates such as paper. We demonstrate that the device performance and sensitivity are strongly dependent on the printing parameter (i.e., drop- spacing, number of printing passes, etc.). We show that values of the Gauge Factor up to 125 can be obtained, with large sensitivity (>20%) even when small strains (0.3%) are applied. Furthermore, we provide preliminary examples of heterostructure-based strain sensors, enabled by the inkjet printing technology.
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Submitted 14 December, 2017; v1 submitted 9 August, 2017;
originally announced August 2017.
