-
Highly luminescent a-SiOx<Er>/SiO2/Si multilayer structure
Authors:
Rossano Lang,
David S. L. Figueira,
Felipe Vallini,
Newton C. Frateschi
Abstract:
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with low quality factor (Q-factor) at 1540 nm. Also, the structure has higher Q-factor resonances in the wavelength range between 600 - 1200 nm. Within this range,…
▽ More
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with low quality factor (Q-factor) at 1540 nm. Also, the structure has higher Q-factor resonances in the wavelength range between 600 - 1200 nm. Within this range, strong light emission from a-SiOx defect-related radiative centers and emission from the Er3+ optical transition 4I11/2 - 4I15/2 (980 nm) are observed. A two-fold improvement in photoluminescence (PL) intensity is achieved in the wavelength range between 800 - 1000 nm. The PL intensity in the wavelength range between 1400 - 1700 nm (region of Er3+ 4I13/2 - 4I15/2 transition) is increased four times. This later higher intensity enhancement is apparently caused by optical pumping at 980 nm, higher Q-factor, with subsequent emission from the 4I13/2 level in the low Q resonance at 1540 nm. Further five times emission enhancement is obtained after optimized temperature annealing. The temperature-induced quenching in the PL intensity indicates distinct deactivation energies related to different types of Er centers which are more or less coupled to defects depending on the thermal treatment temperature.
△ Less
Submitted 10 May, 2012; v1 submitted 21 July, 2011;
originally announced July 2011.
-
Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm
Authors:
D. S. L. Figueira,
D. Mustafa,
L. R. Tessler,
N. C. Frateschi
Abstract:
We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited b…
▽ More
We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited by reactive RF co-sputtering. Secondly, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOx<Er> matrix via a hard annealing at 1150 C. The SiO2 and the a-SiOx<Er> thicknesses were designed to support resonances near the pumping wavelength (~500nm), near the Si-NC emission (~800nm) and near the a-SiOx<Er> emission (~1550nm) enhancing the optical pumping process.
△ Less
Submitted 17 June, 2009;
originally announced June 2009.
-
Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam
Authors:
F. Vallini,
D. S. L Figueira,
P. F. Jarschel,
L. A. M. Barea,
A. A. G. Von zuben,
A. S. Filho,
N. C. Frateschi
Abstract:
InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for the evaluation of Ga+ Focused Ion Beam (FIB) milling of mirrors. Electrical and optical proprieties were investigated. A 7% increment in threshold current, a 17% reduction in external quantum efficiency and 15 nm blue shift in the emission spectrum were observed after milling as compared to the as cleaved facet result. Ann…
▽ More
InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for the evaluation of Ga+ Focused Ion Beam (FIB) milling of mirrors. Electrical and optical proprieties were investigated. A 7% increment in threshold current, a 17% reduction in external quantum efficiency and 15 nm blue shift in the emission spectrum were observed after milling as compared to the as cleaved facet result. Annealing in inert atmosphere partially revert these effects resulting in 4% increment in threshold current, 11% reduction in external efficiency and 13 nm blue shift with the as cleaved result. The current-voltage behavior after milling and annealing shows a very small increase in leakage current indicating that optical damage is the main effect of the milling process.
△ Less
Submitted 6 April, 2009;
originally announced April 2009.
-
Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures
Authors:
D. S. L Figueira,
D. Mustafa,
L. R. Tessler,
N. C. Frateschi
Abstract:
Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be d…
▽ More
Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.
△ Less
Submitted 9 June, 2008;
originally announced June 2008.
-
Rare-earth Doped Amorphous Silicon Microdisk and Microstadium Resonators with Emission at 1550nm
Authors:
D. S. L. Figueira,
N. C. Frateschi
Abstract:
Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550 nm for samples with erbium concentrations as high as 1.02x10^20 atoms/cm3. Near field scanning optical microscopy shows evidences of the simultaneous presence…
▽ More
Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550 nm for samples with erbium concentrations as high as 1.02x10^20 atoms/cm3. Near field scanning optical microscopy shows evidences of the simultaneous presence of bow-tie and diamond scars. These modes indicate the high quality of the resonators and the potentiality for achieving amorphous silicon microcavity lasers.
△ Less
Submitted 9 November, 2007;
originally announced November 2007.
