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SnO/$β$-Ga2O3 vertical $pn$ heterojunction diodes
Authors:
Melanie Budde,
Daniel Splith,
Piero Mazzolini,
Abbes Tahraoui,
Johannes Feldl,
Manfred Ramsteiner,
Holger von Wenckstern,
Marius Grundmann,
Oliver Bierwagen
Abstract:
Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $β$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without…
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Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $β$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without in-plane expitaxial relation to the substrate. After subsequent contact processing and mesa etching (which drastically reduced the reverse current spreading in the SnO layer and associated high leakage) electrical characterization by current-voltage and capacitance-voltage measurement was performed. The results reveal a type-I band alignment and junction transport by thermionic emission in forward bias. A rectification of $2\times10^{8}$ at $\pm1$V, an ideality factor of 1.16, differential specific on-resistance of 3.9m$Ω\thinspace$cm$^{2}$, and built-in voltage of 0.96V were determined. The $pn$-junction isolation prevented parallel conduction in the highly-conductive Ga$_{2}$O$_{3}$ substrate (sheet resistance $R_{S}\approx3\thinspaceΩ$) during van-der-Pauw Hall measurements of the SnO layer on top ($R_{S}\approx150$k$Ω$, $p\approx2.5\times10^{18}$cm$^{-3}$, Hall mobility $\approx1$cm$^{2}$/Vs). The measured maximum reverse breakdown voltage of the diodes was 66V, corresponding to a peak breakdown field 2.2MV/cm in the Ga$_{2}$O$_{3}$-depletion region. Higher breakdown voltages that are required in high-voltage devices could be achieved by reducing the donor concentration in the $β$-Ga$_{2}$O$_{3}$ to increase the depletion width as well as improving the contact geometry to reduce field crowding.
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Submitted 1 October, 2020;
originally announced October 2020.
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Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
Authors:
Melanie Budde,
Carsten Tschammer,
Philipp Franz,
Johannes Feldl,
Manfred Ramsteiner,
Rüdiger Goldhahn,
Martin Feneberg,
Nicolae Barsan,
Alexandru Oprea,
Oliver Bierwagen
Abstract:
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by X-ray diffraction measurements for all used growth conditions and substrates except MgO(111). A detailed growth series on MgO(100) was prepared using substrate te…
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NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by X-ray diffraction measurements for all used growth conditions and substrates except MgO(111). A detailed growth series on MgO(100) was prepared using substrate temperatures ranging from 20 °C to 900 °C to investigate the influence on the layer characteristics. Energy-dispersive X-ray spectroscopy indicated close-to-stoichiometric layers with an oxygen content of ~47 at. % and ~50 at. % grown under low and high O-flux, respectively. All NiO layers had a root-mean-square surface roughness below 1 nm, measured by atomic force microscopy, except for rougher layers grown at 900 °C or using molecular oxygen. Growth at 900 °C led to a significant diffusion of Mg from the substrate into the film. The relative intensity of the quasi-forbidden one-phonon Raman peak is introduced as a gauge of the crystal quality, indicating the highest layer quality for growth at low oxygen flux and high growth temperature, likely due to the resulting high adatom diffusion length during growth. The optical and electrical properties were investigated by spectroscopic ellipsometry and resistance measurements, respectively. All NiO layers were transparent with an optical bandgap around 3.6 eV and semi-insulating at room temperature. However, changes upon exposure to reducing or oxidizing gases of the resistance of a representative layer at elevated temperature were able to confirm p-type conductivity, highlighting their suitability as a model system for research on oxide-based gas sensing.
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Submitted 6 January, 2020;
originally announced January 2020.
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Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
Authors:
Melanie Budde,
Thilo Remmele,
Carsten Tschammer,
Johannes Feldl,
Philipp Franz,
Jonas Lähnemann,
Zongzhe Cheng,
Michael Hanke,
Manfred Ramsteiner,
Martin Albrecht,
Oliver Bierwagen
Abstract:
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two rotational domains, with epitaxial relation $\normalsize{}\mathrm{\mathrm{\mathrm{NiO}(1\bar{\mathrm{1}}0)}\:||\:\mathrm{\mathrm{GaN}(11.0)}}$ and…
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The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two rotational domains, with epitaxial relation $\normalsize{}\mathrm{\mathrm{\mathrm{NiO}(1\bar{\mathrm{1}}0)}\:||\:\mathrm{\mathrm{GaN}(11.0)}}$ and $\mathrm{\mathrm{\mathrm{NiO}\mathrm{(10\bar{\mathrm{1}})}\:||\:\mathrm{GaN(11.0)}}}$, was observed by X-ray diffraction (XRD) and confirmed by in-situ reflection high-energy electron diffraction as well as transmission electron microscopy (TEM) and electron backscatter diffraction. With respect to the high lattice mismatch of 8.1 % and a measured low residual tensile layer strain, growth by lattice matching epitaxy or domain matching epitaxy is discussed. The morphology measured by atomic force microscopy showed a grainy surface, probably arising from the growth by the columnar rotational domains visible in TEM micrographs. The domain sizes measured by AFM and TEM increase with the growth temperature, indicating an increasing surface diffusion length. Growth at 850 $^{\circ}$C, however, involved local decomposition of the GaN substrate that lead to an interfacial $\mathrmβ$-Ga$\mathrm{_{2}}$O$\mathrm{_{3}}$($\bar{\mathrm{2}}$01) layer and a high NiO surface roughness. Raman mesurements of the quasi-forbidden one-phonon peak indicate increasing layer quality (decreasing defect density) with increasing growth temperature. The results above suggest optimum growth temperatures around 700 $^{\circ}$C for high layer and interface quality.
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Submitted 7 January, 2020; v1 submitted 17 October, 2019;
originally announced October 2019.
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Time- and angle-resolved photoemission spectroscopy of solids in the extreme ultraviolet at 500 kHz repetition rate
Authors:
M. Puppin,
Y. Deng,
C. W. Nicholson,
J. Feldl,
N. B. M. Schroeter,
H. Vita,
P. S. Kirchmann,
C. Monney,
L. Rettig,
M. Wolf,
R. Ernstorfer
Abstract:
Time- and angle-resolved photoelectron spectroscopy (trARPES) employing a 500 kHz extreme-ultravioled (XUV) light source operating at 21.7 eV probe photon energy is reported. Based on a high-power ytterbium laser, optical parametric chirped pulse amplification (OPCPA), and ultraviolet-driven high-harmonic generation, the light source produces an isolated high-harmonic with 110 meV bandwidth and a…
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Time- and angle-resolved photoelectron spectroscopy (trARPES) employing a 500 kHz extreme-ultravioled (XUV) light source operating at 21.7 eV probe photon energy is reported. Based on a high-power ytterbium laser, optical parametric chirped pulse amplification (OPCPA), and ultraviolet-driven high-harmonic generation, the light source produces an isolated high-harmonic with 110 meV bandwidth and a flux of more than $10^{11}$ photons/second on the sample. Combined with a state-of-the-art ARPES chamber, this table-top experiment allows high-repetition rate pump-probe experiments of electron dynamics in occupied and normally unoccupied (excited) states in the entire Brillouin zone and with a temporal system response function below 40 fs.
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Submitted 13 February, 2019; v1 submitted 16 November, 2018;
originally announced November 2018.
