Showing 1–8 of 8 results for author: Fathpour, S

Fully-Tensorial Elastic-Wave Mode-Solver in FEniCS for Stimulated Brillouin Scattering Modeling

Authors: Marcin Malinowski, Sasan Fathpour

Abstract: A framework for simulating the elastic-wave modes in waveguides, taking into account the full tensorial nature of the stiffness tensor, is presented and implemented in the open-source finite element solver, FEniCS. Various approximations of the elastic wave equation used in the stimulated Brillouin scattering literature are implemented and their validity and applicability are discussed. The elasti… ▽ More A framework for simulating the elastic-wave modes in waveguides, taking into account the full tensorial nature of the stiffness tensor, is presented and implemented in the open-source finite element solver, FEniCS. Various approximations of the elastic wave equation used in the stimulated Brillouin scattering literature are implemented and their validity and applicability are discussed. The elastic mode-solver is also coupled with an electromagnetic counterpart to study the influence of elastic anisotropies on Brillouin gain. △ Less

Submitted 27 April, 2019; v1 submitted 5 December, 2018; originally announced December 2018.

Topographically anisotropic photonics for broadband integrated polarization diversity

Authors: Jeff Chiles, Tracy Sjaardema, Ashutosh Rao, Sasan Fathpour

Abstract: Integrated polarimetric receivers have the potential to define a new generation of lightweight, high-performance instrumentation for remote sensing. To date, on-chip polarization-selective devices such as polarizing beam-splitters have yet to even approach the necessary performance, due to fundamental design limitations. Here, we propose, simulate and experimentally demonstrate a method for realiz… ▽ More Integrated polarimetric receivers have the potential to define a new generation of lightweight, high-performance instrumentation for remote sensing. To date, on-chip polarization-selective devices such as polarizing beam-splitters have yet to even approach the necessary performance, due to fundamental design limitations. Here, we propose, simulate and experimentally demonstrate a method for realizing spatially-mapped birefringence onto integrated photonic circuits, deemed topographically anisotropic photonics. With this robust and widely tolerant approach, devices can be constructed with strongly polarization-dependent modal properties and minimal wavelength dependence. An integrated polarizing beam-splitter (PBS) is realized with unprecedented performance: a record 0.52 octaves of fractional bandwidth (116 THz), maximum insertion loss of 1.4 +/- 0.8 dB, and a minimum extinction ratio of 16 +/- 3 dB, pushing it into the realm of wideband spectroscopy and imaging applications. Additionally, novel photonic structures such as polarization-selective beam-taps and polarization-selective microring resonators are demonstrated, enabling new on-chip polarimetric receiver architectures. △ Less

Submitted 19 February, 2017; originally announced February 2017.

Second-harmonic generation in single-mode integrated waveguides through mode-shape modulation

Authors: Jeff Chiles, Seyfollah Toroghi, Ashutosh Rao, Marcin Malinowski, Guillermo Fernando Camacho-González, Sasan Fathpour

Abstract: A simple and flexible technique for achieving quasi-phase-matching in integrated photonic waveguides without periodic poling is proposed and experimentally demonstrated, referred to as mode-shape-modulation (MSM). It employs a periodic variation of waveguide width to modulate the intensity of the pump wave, effectively suppressing out-of-phase light generation. This technique is applied to the cas… ▽ More A simple and flexible technique for achieving quasi-phase-matching in integrated photonic waveguides without periodic poling is proposed and experimentally demonstrated, referred to as mode-shape-modulation (MSM). It employs a periodic variation of waveguide width to modulate the intensity of the pump wave, effectively suppressing out-of-phase light generation. This technique is applied to the case of second-harmonic generation in thin-film lithium niobate ridge waveguides. MSM waveguides are fabricated and characterized with pulsed-pumping in the near-infrared, showing harmonic generation at a signal wavelength of 784 nm. △ Less

Submitted 6 October, 2016; originally announced October 2016.

Second-harmonic generation in periodically-poled thin film lithium niobate wafer-bonded on silicon

Authors: Ashutosh Rao, Marcin Malinowski, Amirmahdi Honardoost, Javed Rouf Talukder, Rayam Rabiei, Peter Delfyett, Sasan Fathpour

Abstract: Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~ 2 μm2. The compactness of the waveguides results in efficient second-order nonlinear… ▽ More Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~ 2 μm2. The compactness of the waveguides results in efficient second-order nonlinear devices. A nonlinear conversion of 8% is obtained with a pulsed input in 4 mm long waveguides. The choice of silicon substrate makes the platform potentially compatible with silicon photonics, and therefore may pave the path towards on-chip nonlinear and quantum-optic applications. △ Less

Submitted 28 September, 2016; originally announced September 2016.

Demonstration of ultra-broadband single-mode and single-polarization operation in T-Guides

Authors: Jeff Chiles, Sasan Fathpour

Abstract: Silica-based anchored-membrane waveguides (T-Guides) are fabricated and characterized from the visible to infrared with streak imaging. It is numerically shown that the T-Guides can have wideband single-mode and single-polarization (SMSP) properties over a span of 2.6 octaves. Experimentally, a polarization-dependent loss difference of up to 90 dB/cm is measured between orthogonal polarizations, a… ▽ More Silica-based anchored-membrane waveguides (T-Guides) are fabricated and characterized from the visible to infrared with streak imaging. It is numerically shown that the T-Guides can have wideband single-mode and single-polarization (SMSP) properties over a span of 2.6 octaves. Experimentally, a polarization-dependent loss difference of up to 90 dB/cm is measured between orthogonal polarizations, and a record SMSP window of >1.27 octaves is observed, limited only by the available measurement equipment. These measurements make a strong case for T-Guides for SMSP photonics, particularly on high-index materials such as our previous demonstration on silicon. △ Less

Submitted 29 June, 2016; originally announced June 2016.

Single-mode and single-polarization photonics with anchored-membrane waveguides

Authors: Jeff Chiles, Sasan Fathpour

Abstract: An integrated photonic platform with anchored-membrane structures, the T-Guide, is proposed and numerically investigated. These compact air-clad structures have high index contrast and are much more stable than prior membrane-type structures. Their semi-infinite geometry enables single-mode and single-polarization (SMSP) operation over unprecedented bandwidths. Modal simulations quantify this beha… ▽ More An integrated photonic platform with anchored-membrane structures, the T-Guide, is proposed and numerically investigated. These compact air-clad structures have high index contrast and are much more stable than prior membrane-type structures. Their semi-infinite geometry enables single-mode and single-polarization (SMSP) operation over unprecedented bandwidths. Modal simulations quantify this behavior, showing that an SMSP window of 2.75 octaves (1.2 - 8.1 μm) is feasible for silicon T-Guides, spanning almost the entire transparency range of silicon. Dispersion engineering for T-Guides yields broad regions of anomalous group velocity dispersion, rendering them a promising platform for nonlinear applications, such as wideband frequency conversion. △ Less

Submitted 20 June, 2016; originally announced June 2016.

Extreme value statistics and the Pareto distribution in silicon photonics

Authors: David Borlaug, Sasan Fathpour, Bahram Jalali

Abstract: L-shape probability distributions are extremely non-Gaussian distributions that have been surprisingly successful in describing the frequency of occurrence of extreme events, ranging from stock market crashes and natural disasters, the structure of biological systems, fractals, and optical rogue waves. In this paper, we show that fluctuations in stimulated Raman scattering in silicon, as well as… ▽ More L-shape probability distributions are extremely non-Gaussian distributions that have been surprisingly successful in describing the frequency of occurrence of extreme events, ranging from stock market crashes and natural disasters, the structure of biological systems, fractals, and optical rogue waves. In this paper, we show that fluctuations in stimulated Raman scattering in silicon, as well as in coherent anti-Stokes Raman scattering, can follow extreme value statistics and provide mathematical insight into the origin of this behavior. As an example of the experimental observations, we find that 16% of the Stokes pulses account for 84% of the pump energy transfer, an uncanny resemblance to the empirical Pareto principle or the 80/20 rule that describes important observation in socioeconomics. △ Less

Submitted 15 September, 2008; originally announced September 2008.

Comments: To be published in the New Journal of Physics

Energy Scavenging in Silicon Raman Amplifiers

Authors: S. Fathpour, K. K. Tsia, B. Jalali

Abstract: Continuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain, and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices. Continuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain, and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices. △ Less

Submitted 23 May, 2006; v1 submitted 16 May, 2006; originally announced May 2006.

Comments: 13 pages