Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films
Authors:
Yangyang Si,
Ningbo Fan,
Yongqi Dong,
Zhen Ye,
Shiqing Deng,
Yijie Li,
Chao Zhou,
Qibin Zeng,
Lu You,
Yimei Zhu,
Zhenlin Luo,
Sujit Das,
Laurent Bellaiche,
Bin Xu,
Huajun Liu,
Zuhuang Chen
Abstract:
Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in thin-film form, the antiferroelectric behavior is often obscured by competing ferroic orders, resulting in slanted hysteresis loops with undesired remnant polarization, subsequently posing challenges in obtaining ideal…
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Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in thin-film form, the antiferroelectric behavior is often obscured by competing ferroic orders, resulting in slanted hysteresis loops with undesired remnant polarization, subsequently posing challenges in obtaining ideal antiferroelectricity and understanding their intrinsic electrical behavior. Here, atomistic models for controllable antiferroelectric-ferroelectric phase transition pathways are unveiled along specific crystallographic directions. Guided by the anisotropic phase transition and orientation design, we achieved ideal antiferroelectricity with square double hysteresis loop, large saturated polarization (~60 μC/cm2), near-zero remnant polarization, fast response time (~75 ns), and near-fatigue-free performance (~10^10 cycles) in (111)P-oriented PbZrO3 epitaxial thin films. Moreover, a bipolar and frequency-independent digital electrostrain (~0.83%) were demonstrated in this architype antiferroelectric system. In-situ X-ray diffraction studies further reveal that the large digital electrostrain results from intrinsic field-induced antiferroelectric-ferroelectric structural transition. This work demonstrates the anisotropic phase transition mechanism and ideal antiferroelectricity with large digital electrostrain in antiferroelectric thin films, offering a new avenue for applications of antiferroelectricity in nanoelectromechanical systems.
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Submitted 15 April, 2025;
originally announced April 2025.
Inferring incubation period distribution of COVID-19 based on SEAIR Model
Authors:
Shiyang Lai,
Tianqi Zhao,
Ningyuan Fan
Abstract:
To reduce the biases of traditional survey-based methods, this paper proposes an epidemic model-based approach to inference the incubation period distribution of COVID-19 utilizing the publicly reported confirmed case number. We construct an epidemic model, namely SEAIR, and take advantage of the dynamic transmission process depicted by SEAIR to estimate the onset probability in each day of expose…
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To reduce the biases of traditional survey-based methods, this paper proposes an epidemic model-based approach to inference the incubation period distribution of COVID-19 utilizing the publicly reported confirmed case number. We construct an epidemic model, namely SEAIR, and take advantage of the dynamic transmission process depicted by SEAIR to estimate the onset probability in each day of exposed individuals in eight impacted countries. Based on these estimations, the general incubation probability distribution of COVID-19 has been revealed. The proposed method can avoid several biases of traditional survey-based methods. However, due to the mathematical-model-based nature of this method, the inference results are somewhat sensitive to the setting of parameters. Therefore, this method should be practiced reasonably on the basis of a certain understanding of the studied epidemic.
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Submitted 21 July, 2020;
originally announced July 2020.
