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Isolator-Free Laser Operation Enabled by Chip-Scale Reflections in Zero-Process-Change SOI
Authors:
Omid Esmaeeli,
Lukas Chrostowski,
Sudip Shekhar
Abstract:
The isolation-free operation of photonic integrated circuits enables dense integration, reducing packaging costs and complexity. Most isolator replacements require a change in the silicon-on-insulator (SOI) foundry process and suffer from large insertion loss. Most solutions did not integrate the laser, leaving the verification incomplete, and measurements with modulated reflections have also been…
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The isolation-free operation of photonic integrated circuits enables dense integration, reducing packaging costs and complexity. Most isolator replacements require a change in the silicon-on-insulator (SOI) foundry process and suffer from large insertion loss. Most solutions did not integrate the laser, leaving the verification incomplete, and measurements with modulated reflections have also been missing. In this work, we present, for the first time, a zero-process-change silicon photonic (SiP) circuit that, when paired with an integrated distributed-feedback laser (DFB), enhances the DFB's immunity to continuous-wave and modulated parasitic reflections from multiple reflectors. The circuit generates intentional, controlled self-injection to stabilize laser dynamics and maintain operation. The SiP circuit is complemented by an electro-optic feedback loop that dynamically adjusts the self-injection to preserve laser stability. The proposed circuit introduces an insertion loss of 1.5 dB and enables the DFB laser to tolerate back reflections as large as -7 dB and -12 dB from on-chip and off-chip reflectors, respectively. The DFB is hybrid integrated with the SiP chip using a photonic wire bond (PWB). The isolator-free operation of the integrated laser in a high-speed optical link has been demonstrated, highlighting its potential for data communication applications.
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Submitted 8 April, 2025;
originally announced April 2025.
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GHz-rate optical phase shift in light matter interaction-engineered, silicon-ferroelectric nematic liquid crystals
Authors:
Iman Taghavi,
Omid Esmaeeli,
Sheri Jahan Chowdhury,
Kashif Awan,
Mustafa Hammood,
Matthew Mitchell,
Donald Witt,
Cory Pecinovsky,
Jason Sickler,
Jeff Young,
Nicolas A. F. Jaeger,
Sudip Shekhar,
Lukas Chrostowski
Abstract:
Organic electro-optic materials have demonstrated promising performance in developing electro-optic phase shifters. Their integration with other silicon photonic processes, nanofabrication complexities, and durability remains to be developed. While the required poling step in electro-optic polymers limits their potential and utilization on a large scale, devices made of paraelectric nematic liquid…
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Organic electro-optic materials have demonstrated promising performance in developing electro-optic phase shifters. Their integration with other silicon photonic processes, nanofabrication complexities, and durability remains to be developed. While the required poling step in electro-optic polymers limits their potential and utilization on a large scale, devices made of paraelectric nematic liquid crystals suffer from slow bandwidth. In ferroelectric nematic liquid crystals, we report an additional GHz-fast phase shift that ultimately allows for significant second-order nonlinear optical coefficients related to the Pockels effect. It avoids poling issues and can pave the way for hybrid silicon-organic systems with CMOS-foundry compatibility. We report DC and AC modulation efficiencies of $\approx$~0.25 V$\cdot$mm (from liquid crystal orientation) and $\approx$~25.7 V$\cdot$mm (from Pockels effect), respectively, an on-chip insertion loss of $\approx$~2.6 dB, and an electro-optic bandwidth of $f_\text{-6dB}$>4.18 GHz, employing improved light-matter interaction in a waveguide architecture that calls for only one lithography step.
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Submitted 8 February, 2025; v1 submitted 13 May, 2024;
originally announced May 2024.
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120 GOPS Photonic Tensor Core in Thin-film Lithium Niobate for Inference and in-situ Training
Authors:
Zhongjin Lin,
Bhavin J. Shastri,
Shangxuan Yu,
Jingxiang Song,
Yuntao Zhu,
Arman Safarnejadian,
Wangning Cai,
Yanmei Lin,
Wei Ke,
Mustafa Hammood,
Tianye Wang,
Mengyue Xu,
Zibo Zheng,
Mohammed Al-Qadasi,
Omid Esmaeeli,
Mohamed Rahim,
Grzegorz Pakulski,
Jens Schmid,
Pedro Barrios,
Weihong Jiang,
Hugh Morison,
Matthew Mitchell,
Xun Guan,
Nicolas A. F. Jaeger,
Leslie A. n Rusch
, et al. (5 additional authors not shown)
Abstract:
Photonics offers a transformative approach to artificial intelligence (AI) and neuromorphic computing by enabling low-latency, high-speed, and energy-efficient computations. However, conventional photonic tensor cores face significant challenges in constructing large-scale photonic neuromorphic networks. Here, we propose a fully integrated photonic tensor core, consisting of only two thin-film lit…
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Photonics offers a transformative approach to artificial intelligence (AI) and neuromorphic computing by enabling low-latency, high-speed, and energy-efficient computations. However, conventional photonic tensor cores face significant challenges in constructing large-scale photonic neuromorphic networks. Here, we propose a fully integrated photonic tensor core, consisting of only two thin-film lithium niobate (TFLN) modulators, a III-V laser, and a charge-integration photoreceiver. Despite its simple architecture, it is capable of implementing an entire layer of a neural network with a computational speed of 120 GOPS, while also allowing flexible adjustment of the number of inputs (fan-in) and outputs (fan-out). Our tensor core supports rapid in-situ training with a weight update speed of 60 GHz. Furthermore, it successfully classifies (supervised learning) and clusters (unsupervised learning) 112 * 112-pixel images through in-situ training. To enable in-situ training for clustering AI tasks, we offer a solution for performing multiplications between two negative numbers.
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Submitted 8 October, 2024; v1 submitted 28 November, 2023;
originally announced November 2023.
