Showing 1–4 of 4 results for author: Enz, C

Generalized Boltzmann relations in semiconductors including band tails

Authors: Arnout Beckers, Dominique Beckers, Farzan Jazaeri, Bertrand Parvais, Christian Enz

Abstract: Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence bands. In this article, we present a generalization of the Boltzmann relations accounting for exponential band tails. To this end, the required… ▽ More Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence bands. In this article, we present a generalization of the Boltzmann relations accounting for exponential band tails. To this end, the required Fermi-Dirac integral is first recast as a Gauss hypergeometric function, followed by a suitable transformation of that special function, and a zeroth-order series expansion using the hypergeometric series. This results in simple relations for the electron and hole densities that each involve two exponentials. One exponential depends on the temperature and the other one on the band-tail parameter. The proposed relations tend to the Boltzmann relations if the band-tail parameters tend to zero. This work comes timely for the modeling of classical semiconductor devices at cryogenic temperatures for large-scale quantum computing. △ Less

Submitted 24 September, 2023; originally announced September 2023.

Journal ref: J. Appl. Phys. 129, 045701 (2021)

Cryogenic MOSFET Threshold Voltage Model

Authors: Arnout Beckers, Farzan Jazaeri, Christian Enz

Abstract: This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for a… ▽ More This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for an accurate estimation of the current. The model is validated with our experimental results from nMOSFETs of a 28-nm CMOS process. The developed model is a key element for a cryo-CMOS compact model and can serve as a guide to optimize processes for high-performance cryo-computing and ultra-low-power quantum computing. △ Less

Submitted 22 April, 2019; originally announced April 2019.

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Authors: Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz

Abstract: In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model… ▽ More In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model can accurately predict the impact of the temperature reduction on the transfer characteristics, back-gate sensitivity, and transconductance efficiency. The presented results aim at extending industry-standard compact models to cryogenic temperatures for the design of cryo- CMOS circuits implemented in a 28 nm FDSOI technology. △ Less

Submitted 16 August, 2018; originally announced August 2018.

Comments: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Journal ref: IEEE EUROSOI-ULIS (2018) 1-4

Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

Authors: Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Christian C. Enz, Adrian M. ionescu

Abstract: Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative Capacitance (NC) in ferroelectric materials is proposed in order to address this physical limitation of CMOS technology. A polarization destabilization in ferr… ▽ More Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative Capacitance (NC) in ferroelectric materials is proposed in order to address this physical limitation of CMOS technology. A polarization destabilization in ferroelectrics causes an effective negative permittivity, resulting in a differential voltage amplification and a reduced subthreshold swing when integrated into the gate stack of a transistor. Recent demonstrations of negative capacitance concerned mainly n-type MOSFETs and their subthreshold slope. An effective technology booster should be capable of improving the performance of both n- and p-type transistors. In this work, we report a significant enhancement in both digital (subthreshold swing, on-current over off-current ratio, and overdrive) and analog (transconductance and current efficiency factor) FoM of commercial 28nm CMOS process by exploiting a PZT capacitor as the negative capacitance booster. Accordingly, a sub-thermal swing down to 10 mV/decade together with an enhanced current efficiency factor up to 10$^5$ V$^{-1}$ is obtained in both n- and p-type MOSFETs at room temperature. The overdrive voltage is enhanced up to 0.45 V, leading to a supply voltage reduction of 50\%. △ Less

Submitted 27 April, 2018; v1 submitted 25 April, 2018; originally announced April 2018.