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Measurement and Calibration Approaches for Full Two-Port Scattering Parameters at mK Temperatures
Authors:
Luca Oberto,
Ehsan Shokrolahzade,
Emanuele Enrico,
Luca Fasolo,
Andrea Celotto,
Bernardo Galvano,
Alessandro Alocco,
Paolo Terzi,
Faisal A. Mubarak,
Marco Spirito
Abstract:
This paper describes the developed set-up and the characterization approaches to realize full two-port, calibrated scattering parameters measurements at cryogenic temperatures, providing a complete uncertainty budget. The system developed at the Istituto Nazionale di Ricerca Metrologica (INRiM, Italy), exploits the Short-Open-Load-Reciprocal technique, to realize error corrected cryogenic measurem…
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This paper describes the developed set-up and the characterization approaches to realize full two-port, calibrated scattering parameters measurements at cryogenic temperatures, providing a complete uncertainty budget. The system developed at the Istituto Nazionale di Ricerca Metrologica (INRiM, Italy), exploits the Short-Open-Load-Reciprocal technique, to realize error corrected cryogenic measurements with single cooling cycle. The system operates at temperatures down to the mK range, in the band 4-12 GHz in coaxial line. Calibration standards are referred to traceable room temperature measurements, while a numerical approach is used to evaluate the artifact response shift from room temperature values, and derive key information to enable full measurement uncertainty budget. Moreover, relevant measurement uncertainty contributions are evaluated according to internationally agreed procedures, and a comprehensive uncertainty budget is presented. Test measurements on a 20 dB attenuator are shown as an example. An attenuation value of 20.70 +/- 0.08 dB (95% confidence interval) was obtained at 6 GHz.
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Submitted 26 May, 2025;
originally announced May 2025.
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Development of KI-TWPAs for the DARTWARS project
Authors:
Felix Ahrens,
Elena Ferri,
Guerino Avallone,
Carlo Barone,
Matteo Borghesi,
Luca Callegaro,
Giovanni Carapella,
Anna Paola Caricato,
Iacopo Carusotto,
Alessandro Cian,
Alessandro D'Elia,
Daniele Di Gioacchino,
Emanuele Enrico,
Paolo Falferi,
Luca Fasolo,
Marco Faverzani,
Giovanni Filatrella,
Claudio Gatti,
Andrea Giachero,
Damiano Giubertoni,
Veronica Granata,
Claudio Guarcello,
Danilo Labranca,
Angelo Leo,
Carlo Ligi
, et al. (18 additional authors not shown)
Abstract:
Noise at the quantum limit over a broad bandwidth is a fundamental requirement for future cryogenic experiments for neutrino mass measurements, dark matter searches and Cosmic Microwave Background (CMB) measurements as well as for fast high-fidelity read-out of superconducting qubits. In the last years, Josephson Parametric Amplifiers (JPA) have demonstrated noise levels close to the quantum limit…
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Noise at the quantum limit over a broad bandwidth is a fundamental requirement for future cryogenic experiments for neutrino mass measurements, dark matter searches and Cosmic Microwave Background (CMB) measurements as well as for fast high-fidelity read-out of superconducting qubits. In the last years, Josephson Parametric Amplifiers (JPA) have demonstrated noise levels close to the quantum limit, but due to their narrow bandwidth, only few detectors or qubits per line can be read out in parallel. An alternative and innovative solution is based on superconducting parametric amplification exploiting the travelling-wave concept. Within the DARTWARS (Detector Array Readout with Travelling Wave AmplifieRS) project, we develop Kinetic Inductance Travelling-Wave Parametric Amplifiers (KI-TWPAs) for low temperature detectors and qubit read-out. KI-TWPAs are typically operated in a threewave mixing (3WM) mode and are characterised by a high gain, a high saturation power, a large amplification bandwidth and nearly quantum limited noise performance. The goal of the DARTWARS project is to optimise the KI-TWPA design, explore new materials, and investigate alternative fabrication processes in order to enhance the overall performance of the amplifier. In this contribution we present the advancements made by the DARTWARS collaboration to produce a working prototype of a KI-TWPA, from the fabrication to the characterisation.
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Submitted 19 February, 2024;
originally announced February 2024.
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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
Authors:
Filippo Giubileo,
Laura Iemmo,
Maurizio Passacantando,
Francesca Urban,
Giuseppe Luongo,
Lingfeng Sun,
Giampiero Amato,
Emanuele Enrico,
Antonio Di Bartolomeo
Abstract:
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapp…
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Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of about 20 V/um with a field enhancement factor of about 500 at anode-cathode distance of 1.5um, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.
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Submitted 3 August, 2018;
originally announced August 2018.
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Development and characterization of a diamond-insulated graphitic multi electrode array realized with ion beam lithography
Authors:
F. Picollo,
A. Battiato,
E. Carbone,
L. Croin,
E. Enrico,
J. Forneris,
S. Gosso,
P. Olivero,
A. Pasquarelli,
V. Carabelli
Abstract:
The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (…
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The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (resistivity Ohm cm) by exploiting the metastable nature of this allotropic form of carbon. A 16 channels MEA (Multi Electrode Array) suitable for cell culture growing has been fabricated by means of ion implantation. A focused 1.2 MeV He+ beam was scanned on a IIa single-crystal diamond sample (4.5x4.5x0.5 mm3) to cause highly damaged sub-superficial structures that were defined with micrometric spatial resolution. After implantation, the sample was annealed. This process provides the conversion of the sub-superficial highly damaged regions to a graphitic phase embedded in a highly insulating diamond matrix. Thanks to a three-dimensional masking technique, the endpoints of the sub-superficial channels emerge in contact with the sample surface, therefore being available as sensing electrodes. Cyclic voltammetry and amperometry measurements of solutions with increasing concentrations of adrenaline were performed to characterize the biosensor sensitivity. The reported results demonstrate that this new type of biosensor is suitable for in vitro detection of catecholamine release.
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Submitted 25 August, 2016;
originally announced August 2016.
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Electrical control of deep NV centers in diamond by means of sub-superficial graphitic micro-electrodes
Authors:
J. Forneris,
S. Ditalia Tchernij,
A. Tengattini,
E. Enrico,
V. Grilj,
N. Skukan,
G. Amato,
L. Boarino,
M. Jakšić,
P. Olivero
Abstract:
The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-ele…
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The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-electrodes with spacing of 9 μm were created in single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam. The high breakdown field of diamond was exploited to electrically control the variation in the relative population of the negative (NV-) and neutral (NV0) charge states of sub-superficial NV centers located in the inter- electrode gap regions, without incurring into current discharges. Photoluminescence spectra acquired from the biased electrodes exhibited an electrically induced increase up to 40% in the NV- population at the expense of the NV0 charge state. The variation in the relative charge state populations showed a linear dependence from the injected current at applied biases smaller than 250 V, and was interpreted as the result of electron trapping at NV sites, consistently with the Space Charge Limited Current interpretation of the abrupt current increase observed at 300 V bias voltage. In correspondence of such trap-filling-induced transition to a high-current regime, a strong electroluminescent emission from the NV0 centers was observed. In the high-current-injection regime, a decrease in the NV- population was observed, in contrast with the results obtained at lower bias voltages. These results disclose new possibilities in the electrical control of the charge state of NV centers located in the diamond bulk, which are characterized by longer spin coherence times.
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Submitted 19 July, 2016;
originally announced July 2016.
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Realization of a diamond based high density multi electrode array by means of deep ion beam lithography
Authors:
Federico Picollo,
Alfio Battiato,
Ettore Bernardi,
Luca Boarino,
Emanuele Enrico,
Jacopo Forneris,
Daniele Gatto Monticone,
Paolo Olivero
Abstract:
In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an…
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In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 um) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 um diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals.
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Submitted 6 December, 2014;
originally announced December 2014.
