Proton and Neutron Induced SEU Cross Section Modeling and Simulation: A Unified Analytical Approach
Authors:
Gennady I. Zebrev,
Nikolay N. Samotaev,
Rustem G. Useinov,
Artur M. Galimov,
Vladimir V. Emeliyanov,
Artyom A. Sharapov,
Dmitri A. Kazyakin,
Alexander S. Rodin
Abstract:
A new physics-based compact model, which makes it possible to simulate in a unified way the neutron and proton of cosmic ray induced SEU cross sections, including effects from nuclear reaction products and from direct ionization by low-energy protons, has been proposed and vali-dated. The proposed approach is analytical and based on explicit analytical relationships and approximations with physics…
▽ More
A new physics-based compact model, which makes it possible to simulate in a unified way the neutron and proton of cosmic ray induced SEU cross sections, including effects from nuclear reaction products and from direct ionization by low-energy protons, has been proposed and vali-dated. The proposed approach is analytical and based on explicit analytical relationships and approximations with physics-based fitting parameters. GEANT4 or SRIM numerical calculations can be used as an aid to adjust or refine the phenomenological parameters or functions included in the model taking into account real geometrical configurations and chemical compositions of the devices. In particular, explicit energy dependencies of the soft error cross sections for protons and neutrons over a wide range of nucleon energies were obtained and validated. Main application areas of developed model include space physics, accelerator studies high energy physics and nuclear experiments.
△ Less
Submitted 20 February, 2024;
originally announced February 2024.
Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach
Authors:
G. I. Zebrev,
K. S. Zemtsov,
R. G. Useinov,
M. S. Gorbunov,
V. V. Emeliyanov,
A. I. Ozerov
Abstract:
We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets in the nanoscale (with feature sizes less than 100 nm) memories.
We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets in the nanoscale (with feature sizes less than 100 nm) memories.
△ Less
Submitted 17 April, 2015;
originally announced April 2015.