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CMOS image sensor with micro-nano holes to improve NIR optical efficiency: micro-holes on top surface vs on bottom
Authors:
E. Ponizovskaya Devine,
Ahasan Ahamad,
Ahmed Mayet,
Amita Rawat,
Aly F Elrefaie,
Toshishige Yamada,
Shih-Yuan Wang,
M Saif Islam
Abstract:
We study the nano- and micro-structures that increase the optical efficiency of the CMOS image pixels in visible and infrared. We consider the difference between the micro-holes at the pixels' bottom and the top and the holes that are composed of smaller holes. Those solutions can facilitate the fabrication. We study the crosstalk and the optical efficiency dependence on the angle of incident of l…
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We study the nano- and micro-structures that increase the optical efficiency of the CMOS image pixels in visible and infrared. We consider the difference between the micro-holes at the pixels' bottom and the top and the holes that are composed of smaller holes. Those solutions can facilitate the fabrication. We study the crosstalk and the optical efficiency dependence on the angle of incident of light and numerical aperture for the pixels in a camera setup.
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Submitted 3 May, 2023;
originally announced May 2023.
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Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm
Authors:
Ekaterina Ponizovskaya-Devine,
Ahmed S. Mayet,
Amita Rawat,
Ahasan Ahamed,
Shih-Yuan Wang,
Aly F. Elrefaie,
Toshishige Yamada,
M. Saif Islam
Abstract:
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical efficiency and extend the range to the 1.7 microns wavelength. We demonstrate an optimization for the width and depth of the nano-holes for maximal absorption in t…
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We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical efficiency and extend the range to the 1.7 microns wavelength. We demonstrate an optimization for the width and depth of the nano-holes for maximal absorption in the near infrared. We show a reduction in cross-talk by employing thin Si oxide deep trench isolation in between the pixels. Finally, we show a 26-50 percent reduction in the device capacitance with the introduction of a hole. Such CMOS-compatible Ge-on_Si sensor will enable high-density, ultra-fast and efficient near-infrared imaging.
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Submitted 11 September, 2022;
originally announced September 2022.
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Optimization of CMOS image sensors with single photon-trapping hole per pixel for enhanced sensitivity in near-infrared
Authors:
E. Ponizovskaya Devine,
Ahasan Ahamed,
Ahmed S. Mayet,
Soroush Ghandiparsi,
Cesar Bartolo-Perez,
Lisa McPhillips,
Aly F. Elrefaie,
Toshishige Yamada,
Shih-Yuan Wang,
M Saif Islam
Abstract:
The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in near-infrared wavelengths. A hole with optimal dimensions enhanced optical absorption by 60% for a 3 $μ$m thick Si photodiode, which is 4 orders better than that for…
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The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in near-infrared wavelengths. A hole with optimal dimensions enhanced optical absorption by 60% for a 3 $μ$m thick Si photodiode, which is 4 orders better than that for comparable flat photodiodes. We have shown that there is an optimal size and depth of the hole that exhibits maximal absorption in blue, green, red, and infrared. Crosstalk was successfully reduced by employing thin trenches between pixels of 1.12 $μ{m^2}$ in size.
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Submitted 1 October, 2021;
originally announced October 2021.
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Maximizing absorption in photon trapping ultra-fast silicon photodetectors
Authors:
Cesar Bartolo-Perez,
Wayesh Qarony,
Soroush Ghandiparsi,
Ahmed S. Mayet,
Ahasan Ahamed,
Hilal Cansizoglu,
Yang Gao,
Ekaterina Ponizovskaya Devine,
Toshishige Yamada,
Aly F Elrefaie,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trapping structu…
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Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trapping structures address this trade-off by enhancing the light-matter interactions, but maximizing their performance remains a challenge due to a multitude of factors influencing their design and fabrication. In this paper, strategies to improve the photon trapping effect while enhancing the speed of operation are investigated. By optimizing the design of photon trapping structures and experimentally integrated them in high-speed photodetectors, a simultaneous broadband absorption efficiency enhancement up to 1000% and a capacitance reduction of more than 50% has been achieved. Such work also allows to present empirical equations to correlate the quantum efficiency of photodetectors with the physical properties of the photon-trapping structures, material characteristics, and limitations of the fabrication technologies. The results obtained, open routes towards designing cost-effective CMOS integrated.
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Submitted 22 December, 2020;
originally announced December 2020.
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Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared
Authors:
E. Ponizovskaya Devine,
Wayesh Qarony,
Ahasan Ahamed,
Ahmed S Mayet,
Soroush Ghandiparsi,
Cesar Bartolo-Perez,
Aly F Elrefaie,
Toshishige Yamada,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancement allows 70% absorption in a 3 microns thick Si. It is 4x better than for the flat pixel. We compared different shapes and sizes of single holes an…
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Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancement allows 70% absorption in a 3 microns thick Si. It is 4x better than for the flat pixel. We compared different shapes and sizes of single holes and holes arrays. We have shown that a certain size and shape in single holes pronounce better optical efficiency enhancement. The crosstalk was successfully reduced with trenches between pixels. We optimized the trenches to achieve minimal pixel separation for 1.12 microns pixel.
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Submitted 20 November, 2020;
originally announced November 2020.
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Enhanced quantum efficiency and reduction of reflection for MSM photodetectors with nano-structured surface
Authors:
Ekaterina Ponizovskaya Devine,
Yang Gao,
Cesar Perez,
Toshishige Yamada,
Aly F. Elrefaie,
M. Saif Islam,
Shih-Yuan Wang
Abstract:
The photon trapping nano-structures help to enhance quantum efficiency and reduce reflection for MSM photodetector that allows fast Si photodetectors at wavelength 800-950nm. The nanostructure consist of micro holes reduces reflection and bends normally incident light into the lateral modes in the absorbing layer.
The photon trapping nano-structures help to enhance quantum efficiency and reduce reflection for MSM photodetector that allows fast Si photodetectors at wavelength 800-950nm. The nanostructure consist of micro holes reduces reflection and bends normally incident light into the lateral modes in the absorbing layer.
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Submitted 10 October, 2018; v1 submitted 29 August, 2018;
originally announced October 2018.
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Optimization of light trapping micro-hole structure for high-speed high-efficiency silicon photodiodes
Authors:
Ekaterina Ponizovskaya Devine,
Hilal Cansizoglu,
Yang Gao,
S. Ghandiparsi,
Ahmet Kaya,
Hasina H. Mamtaz,
Ahmed S. Mayet,
Toshishige Yamada,
Aly F. Elrefaie,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum efficiency in a wide wavelength range.
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum efficiency in a wide wavelength range.
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Submitted 29 August, 2018;
originally announced October 2018.
