Showing 1–6 of 6 results for author: Dunand, S

Proton irradiation on Hydrogenated Amorphous Silicon flexible devices

Authors: M. Menichelli, S. Aziz, A. Bashiri, M. Bizzarri, C. Buti, L. Calcagnile, D. Calvo, M. Caprai, D. Caputo, A. P. Caricato, R. Catalano, M. Cazzanelli, R. Cirio, G. A. P. Cirrone, F. Cittadini, T. Croci, G. Cuttone, G. de Cesare, P. De Remigis, S. Dunand, M. Fabi, L. Frontini, C. Grimani, M. Guarrera, H. Hasnaoui , et al. (36 additional authors not shown)

Abstract: Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick char… ▽ More Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices. △ Less

Submitted 17 December, 2024; originally announced December 2024.

Comments: This paper was presented at the IEEE-RTSD2024 in Tampa (USA) with presentation number: R08-04

Characterization of hydrogenated amorphous silicon sensors on polyimide flexible substrate

Authors: M. Menichelli, L. Antognini, S. Aziz, A. Bashiri, M. Bizzarri, L. Calcagnile, M. Caprai, D. Caputo, A. P. Caricato, R. Catalano, D. Chilà, G. A. P. Cirrone, T. Croci, G. Cuttone, G. De Cesare, S. Dunand, M. Fabi, L. Frontini, C. Grimani, M. Ionica, K. Kanxheri, M. Large, V. Liberali, N. Lovecchio, M. Martino , et al. (28 additional authors not shown)

Abstract: Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiothe… ▽ More Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events) and neutron flux measurements. In this paper we have studied the dosimetric x-ray response of n-i-p diodes deposited on Polyimide. We measured the linearity of the photocurrent response to x-rays versus dose-rate from which we have extracted the dosimetric x-ray sensitivity at various bias voltages. In particular low bias voltage operation has been studied to assess the high energy efficiency of these kind of sensor. A measurement of stability of x-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown. △ Less

Submitted 30 September, 2023; originally announced October 2023.

A Hydrogenated amorphous silicon detector for Space Weather Applications

Authors: Catia Grimani, Michele Fabi, Federico Sabbatini, Mattia Villani, Lucio Calcagnile, Anna Paola Caricato, Roberto Catalano, Giuseppe Antonio Pablo Cirrone, Tommaso Croci, Giacomo Cuttone, Sylvain Dunand, Luca Frontini, Maria Ionica, Keida Kanxheri, Matthew Large, Valentino Liberali, Maurizio Martino, Giuseppe Maruccio, Giovanni Mazza, Mauro Menichelli, Anna Grazia Monteduro, Arianna Morozzi, Francesco Moscatelli, Stefania Pallotta, Daniele Passeri , et al. (13 additional authors not shown)

Abstract: The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent radiation hardness and finds application in harsh radiation environments for medical purposes, for particle beam characterization and in space weather science and… ▽ More The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent radiation hardness and finds application in harsh radiation environments for medical purposes, for particle beam characterization and in space weather science and applications. The critical flux detection threshold for solar X rays, soft gamma rays, electrons and protons is discussed in detail. △ Less

Submitted 1 September, 2023; v1 submitted 1 February, 2023; originally announced February 2023.

Comments: 32 pages, 13 figures, submitted to Experimental Astronomy

Development of thin hydrogenated amorphous silicon detectors on a flexible substrate

Authors: M. Menichelli, M. Bizzarri, L. Calcagnile, M. Caprai, A. P. Caricato, R. Catalano, G. A. P. Cirrone, T. Croci, G. Cuttone, S. Dunand, M. Fabi, L. Frontini, B. Gianfelici, C. Grimani, M. Ionica, K. Kanxheri, M. Large, V. Liberali, M. Martino, G. Maruccio, G. Mazza, A. G. Monteduro, A. Morozzi, F. Moscatelli, S. Pallotta , et al. (18 additional authors not shown)

Abstract: The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and space applications. Since a-Si:H is a material with superior radiation hardness, the benefit for the above-mentioned applications can be appreciated mostly in radi… ▽ More The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and space applications. Since a-Si:H is a material with superior radiation hardness, the benefit for the above-mentioned applications can be appreciated mostly in radiation harsh environments. Furthermore, the possibility to deposit this material on flexible substrates like Polyimide (PI), polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) facilitates the usage of these detectors in medical dosimetry, beam flux and beam profile measurements. Particularly interesting is its use when positioned directly on the flange of the vacuum-to-air separation interface in a beam line, as well as other applications where a thin self-standing radiation flux detector is envisaged. In this paper, the HASPIDE project will be described and some preliminary results on PI and glass substrates will be reported. △ Less

Submitted 30 November, 2022; originally announced November 2022.

Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D- detectors

Authors: M. Menichelli, M. Bizzarri, M. Boscardin, M. Caprai, A. P. Caricato, G. A. P. Cirrone, M. Crivellari, I. Cupparo, G. Cuttone, S. Dunand, L. Fanò, O. Hammad, M. Ionica, K. Kanxheri, M. Large, G. Maruccio, A. G. Monteduro, A. Morozzi, F. Moscatelli, A. Papi, D. Passeri, M. Petasecca, G. Petringa, G. Quarta, S. Rizzato , et al. (7 additional authors not shown)

Abstract: Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of intrinsic and doped PECVD of a mixture of Silane (SiH4) and molecular Hydrogen. In order to develop 3D detector geometries using a-Si:H, two op… ▽ More Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of intrinsic and doped PECVD of a mixture of Silane (SiH4) and molecular Hydrogen. In order to develop 3D detector geometries using a-Si:H, two options for the junction fabrication have been considered: ion implantation and charge selective contacts through atomic layer deposition. In order to test the functionality of the charge selective contact electrodes, planar detectors have been fabricated utilizing this technique. In this paper, we provide a general overview of the 3D fabrication project followed by the results of leakage current measurements and x-ray dosimetric tests performed on planar diodes containing charge selective contacts to investigate the feasibility of the charge selective contact methodology for integration with the proposed 3D detector architectures. △ Less

Submitted 3 February, 2022; v1 submitted 30 September, 2021; originally announced September 2021.

Comments: Submitted to JINST

Hydrogenated amorphous silicon detectors for particle detection, beam flux monitoring and dosimetry in high-dose radiation environment

Authors: Mauro Menichelli, Maurizio Boscardin, Michele Crivellari, Jeremy Davis, Silvan Dunand, Livio Fanò, Arianna Morozzi, Francesco Moscatelli, Maria Movileanu-Ionica, Daniele Passeri, Marco Petasecca, Mauro Piccini, Alessandro Rossi, Andrea Scorzoni, Leonello Servoli, Giovanni Verzellesi, Nicolas Wyrsch

Abstract: Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 micron. However MIP detection using planar structures has always been problematic due to the po… ▽ More Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 micron. However MIP detection using planar structures has always been problematic due to the poor S/N ratio related to the high leakage current at high depletion voltage and the low charge collection efficiency. The usage of 3D detector architecture can be beneficial for the possibility to reduce inter-electrode distance and increase the thickness of the detector for larger charge generation compared to planar structures. Such a detector can be used for future hadron colliders for its radiation resistance and also for X-ray imaging. Furthermore the possibility of a-Si:H deposition on flexible materials (like kapton) can be exploited to build flexible and thin beam flux measurement detectors and x-ray dosimeters. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Comments: 10 pages 5 figures, 1 table