Showing 1–2 of 2 results for author: Drosdetsky, M G

Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits

Authors: Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov, Maxim G. Drosdetsky

Abstract: Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness parameters, dose-rate and annealing effects, and dependence on electric modes under irradiation. It was shown that proposed approach can be applied for description of dose dependent static leakage currents in complex FPGA cir… ▽ More Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness parameters, dose-rate and annealing effects, and dependence on electric modes under irradiation. It was shown that proposed approach can be applied for description of dose dependent static leakage currents in complex FPGA circuits. △ Less

Submitted 15 October, 2017; v1 submitted 24 April, 2017; originally announced April 2017.

Comments: 6 pages, 10 figures

Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators

Authors: Gennady I. Zebrev, Maxim G. Drosdetsky

Abstract: This paper is devoted mainly to mathematical aspects of modeling and simulation of tunnel relaxation of nonequilibrium charged oxide traps located at/near the interface insulator - conductive channel, for instance in irradiated MOS devices. The generic form of the tunnel annealing response function was derived from the rate equation for the charged defect buildup and annealing as a linear superpos… ▽ More This paper is devoted mainly to mathematical aspects of modeling and simulation of tunnel relaxation of nonequilibrium charged oxide traps located at/near the interface insulator - conductive channel, for instance in irradiated MOS devices. The generic form of the tunnel annealing response function was derived from the rate equation for the charged defect buildup and annealing as a linear superposition of the responses of different defects with different time constants. Using this linear response function, a number of important practical problems are analyzed and discussed. Combined tunnel and thermal or RICN annealing, power-like temporal relaxation after a single ion strike into the gate oxide, are described in context of general approach. △ Less

Submitted 17 April, 2015; originally announced April 2015.

Comments: 8 pages, 4 figures, a journal submission