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Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
Authors:
Seunguk Song,
Dhiren K. Pradhan,
Zekun Hu,
Yinuo Zhang,
Rachael N. Keneipp,
Michael A. Susner,
Pijush Bhattacharya,
Marija Drndić,
Roy H. Olsson III,
Deep Jariwala
Abstract:
The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate…
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The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate a giant remnant polarization exceeding 250 $μ$C/cm$^2$ -- more than twice that of any known ferroelectric -- driven by an enhanced c/a ratio in the wurtzite structure. Our devices sustain remarkably high electric fields (~13 MV/cm) while maintaining reliable switching, achieving over 104 polarization reversal cycles at 12 K. Critically, this breakdown field strength approaches that of passive dielectric materials while maintaining ferroelectric functionality. The extraordinary polarization enhancement and high-field stability at cryogenic temperatures contrasts sharply with oxide ferroelectrics, establishing wurtzite ferroelectrics as a distinct class of polar materials with implications spanning fundamental physics to cryogenic non-volatile memory and quantum technologies.
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Submitted 25 March, 2025;
originally announced March 2025.
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High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Authors:
Seunguk Song,
Kwan-Ho Kim,
Rachael Keneipp,
Nicholas Trainor,
Chen Chen,
Jeffrey Zheng,
Joan M. Redwing,
Marija Drndić,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistan…
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Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistance between the metal electrodes and the channel. Here, we report a significant enhancement in performance of contact-engineered FeFETs with a 2D MoS2 channel and a ferroelectric Al0.68Sc0.32N (AlScN) gate dielectric. Replacing Ti with In contact electrodes results in a fivefold increase in on-state current (~120 uA/um at 1 V) and on-to-off ratio (~2*10^7) in the FeFETs. In addition, the high carrier concentration in the MoS2 channel during the on-state (> 10^14 cm^-2) facilitates the observation of a metal-to-insulator phase transition in monolayer MoS2 permitting observation of high field effect mobility (> 100 cm^2V^-1s^-1) at cryogenic temperatures. Our work and devices broaden the potential of FeFETs and provides a unique platform to implement high-carrier-density transport in a 2D channel.
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Submitted 4 June, 2024;
originally announced June 2024.
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Three-dimensional micro-electromagnet traps for neutral and charged particles
Authors:
M. Drndic,
C. S. Lee,
R. M. Westervelt
Abstract:
Three-dimensional (3D) micro-electromagnets were developed to control particle motion in magnetic field landscapes in vacuum near a chip. Multiple layers of micron-scale conductors separated by transparent insulators create particle containers with deep, symmetric and time-dependent potentials, suitable for integration in quantum circuits. Single and coupled multiple 3D traps, integrated 3D trap…
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Three-dimensional (3D) micro-electromagnets were developed to control particle motion in magnetic field landscapes in vacuum near a chip. Multiple layers of micron-scale conductors separated by transparent insulators create particle containers with deep, symmetric and time-dependent potentials, suitable for integration in quantum circuits. Single and coupled multiple 3D traps, integrated 3D traps with a mirror, 3D guides for neutral particles with spin, and traps for electrons in vacuum are described.
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Submitted 31 October, 2000;
originally announced October 2000.
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Properties of Microelectromagnet Mirrors as Reflectors of Cold Rb Atoms
Authors:
M. Drndic,
G. Zabow,
C. S. Lee,
J. H. Thywissen,
K. S. Johnson,
M. Prentiss,
R. M. Westervelt,
P. D. Featonby,
V. Savalli,
L. Cognet,
K. Helmerson,
N. Westbrook,
C. I. Westbrook,
W. D. Phillips,
A. Aspect
Abstract:
Cryogenically cooled microelectromagnet mirrors were used to reflect a cloud of free-falling laser-cooled 85Rb atoms at normal incidence. The mirrors consisted of microfabricated current-carrying Au wires in a periodic serpentine pattern on a sapphire substrate. The fluorescence from the atomic cloud was imaged after it had bounced off a mirror. The transverse width of the cloud reached a local…
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Cryogenically cooled microelectromagnet mirrors were used to reflect a cloud of free-falling laser-cooled 85Rb atoms at normal incidence. The mirrors consisted of microfabricated current-carrying Au wires in a periodic serpentine pattern on a sapphire substrate. The fluorescence from the atomic cloud was imaged after it had bounced off a mirror. The transverse width of the cloud reached a local minimum at an optimal current corresponding to minimum mirror roughness. A distinct increase in roughness was found for mirror configurations with even versus odd number of lines. These observations confirm theoretical predictions.
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Submitted 19 August, 1999;
originally announced August 1999.
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Guiding Neutral Atoms
Authors:
N. H. Dekker,
C. S. Lee,
V. Lorent,
J. H. Thywissen,
M. Drndic,
S. P. Smith,
R. M. Westervelt,
M. Prentiss
Abstract:
We demonstrate the guiding of neutral atoms by the magnetic fields due to microfabricated current-carrying wires on a chip. Atoms are guided along a magnetic field minimum parallel to and above the current-carrying wires. Two waveguide configurations are demonstrated: one using two wires with an external magnetic field, and a second using four wires without an external field. These waveguide geo…
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We demonstrate the guiding of neutral atoms by the magnetic fields due to microfabricated current-carrying wires on a chip. Atoms are guided along a magnetic field minimum parallel to and above the current-carrying wires. Two waveguide configurations are demonstrated: one using two wires with an external magnetic field, and a second using four wires without an external field. These waveguide geometries can be extended to integrated atom optics circuits, including beamsplitters.
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Submitted 16 August, 1999;
originally announced August 1999.
