Breaking 1.7V open circuit voltage in large area transparent perovskite solar cells using bulk and interfaces passivation
Authors:
Fabio Matteocci,
Diego Di Girolamo,
Guillame Vidon,
Jessica Barichello,
Francesco Di Giacomo,
Farshad Jafarzadeh,
Barbara Paci,
Amanda Generosi,
Minjin Kim,
Luigi Angelo Castriotta,
Mathieu Frégnaux,
Jean-François Guillemoles,
Philip Schulz,
Daniel Ory,
Stefania Cacovich,
Aldo Di Carlo
Abstract:
Efficient semi-transparent solar cells can trigger the adoption of building integrated photovoltaics. Halide perovskites are particularly suitable in this respect owing to their tunable bandgap. Main drawbacks in the development of transparent perovskite solar cells are the high Voc deficit and the difficulties in depositing thin films over large area substrates, given the low solubility of bromid…
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Efficient semi-transparent solar cells can trigger the adoption of building integrated photovoltaics. Halide perovskites are particularly suitable in this respect owing to their tunable bandgap. Main drawbacks in the development of transparent perovskite solar cells are the high Voc deficit and the difficulties in depositing thin films over large area substrates, given the low solubility of bromide and chloride precursors. In this work, we develop a 2D and passivation strategies for the high band-gap Br perovskite able to reduce charge recombination and consequently improving the open-circuit voltage. We demonstrate 1cm 2 perovskite solar cells with Voc up to 1.73 V (1.83 eV QFLS) and a PCE of 8.2%. The AVT exceeds 70% by means of a bifacial light management and a record light utilization efficiency of 5.72 is achieved, setting a new standard for transparent photovoltaics. Moreover, we show the high ceiling of our technology towards IoT application due to a bifaciality factor of 87% along with 17% PCE under indoor lighting. Finally, the up-scaling has been demonstrated fabricating 20cm 2 -active area modules with PCE of 7.3% and Voc per cell up to 1.65V.
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Submitted 31 January, 2024;
originally announced January 2024.
MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%
Authors:
Leyla Najafi,
Babak Taheri,
Beatriz Martin-Garcia,
Sebastiano Bellani,
Diego Di Girolamo,
Antonio Agresti,
Reinier Oropesa-Nunez,
Sara Pescetelli,
Luigi Vesce,
Emanuele Calabro,
Mirko Prato,
Antonio E. Del Rio Castillo,
Aldo Di Carlo,
Francesco Bonaccorso
Abstract:
Interface engineering of organic-inorganic halide perovskite solar cells (PSCs) plays a pivotal role in achieving high power conversion efficiency (PCE). Graphene and related two-dimensional materials (GRMs) are promising candidates to tune on demand the interface properties of PSCs. In this work, we fully exploit the potential of GRMs by controlling the optoelectronic properties of hybrids betwee…
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Interface engineering of organic-inorganic halide perovskite solar cells (PSCs) plays a pivotal role in achieving high power conversion efficiency (PCE). Graphene and related two-dimensional materials (GRMs) are promising candidates to tune on demand the interface properties of PSCs. In this work, we fully exploit the potential of GRMs by controlling the optoelectronic properties of hybrids between molybdenum disulfide (MoS2) and reduced graphene oxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) in mesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (MAPbI3)-based PSC. We show that zero-dimensional MoS2 quantum dots (MoS2 QDs), derived by liquid phase exfoliated MoS2 flakes, provide both hole-extraction and electron-blocking properties. In fact, on the one hand, intrinsic n-type doping-induced intra-band gap states effectively extract the holes through an electron injection mechanism. On the other hand, quantum confinement effects increase the optical band gap of MoS2 (from 1.4 eV for the flakes to > 3.2 for QDs), raising the minimum energy of its conduction band (from -4.3 eV for the flakes to -2.2 eV for QDs) above the one of conduction band of MAPbI3 (between -3.7 and -4 eV) and hindering electron collection. The van der Waals hybridization of MoS2 QDs with functionalized reduced graphene oxide (f-RGO), obtained by chemical silanization-induced linkage between RGO and (3-mercaptopropyl)trimethoxysilane, is effective to homogenize the deposition of HTLs or ABLs onto the perovskite film, since the two-dimensional (2D) nature of RGO effectively plug the pinholes of the MoS2 QDs films. Our graphene interface engineering (GIE) strategy based on van der Waals MoS2 QD/graphene hybrids enable MAPbI3-based PSCs to achieve PCE up to 20.12% (average PCE of 18.8%).
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Submitted 21 March, 2019;
originally announced March 2019.
