Photoemission Spectroscopy on photoresist materials: A protocol for analysis of radiation sensitive materials
Authors:
Faegheh S. Sajjadian,
Laura Galleni,
Kevin M. Dorney,
Dhirendra P. Singh,
Fabian Holzmeier,
Michiel J. van Setten,
Stefan De Gendt,
Thierry Conard
Abstract:
Device architectures and dimensions are now at an unimaginable level not thought possible even 10 years ago. The continued downscaling, following the so-called Moore's law, has motivated the development and use of extreme ultraviolet (EUV) lithography scanners with specialized photoresists. Since the quality and precision of the transferred circuit pattern is determined by the EUV induced chemical…
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Device architectures and dimensions are now at an unimaginable level not thought possible even 10 years ago. The continued downscaling, following the so-called Moore's law, has motivated the development and use of extreme ultraviolet (EUV) lithography scanners with specialized photoresists. Since the quality and precision of the transferred circuit pattern is determined by the EUV induced chemical changes in the photoresist, having a deep understanding of these chemical changes is of pivotal importance. For this purpose, several spectroscopic and material characterization techniques have already been employed so far. Among them, photoemission can be essential as it not only allows direct probing of chemical bonds in a quantitative way but also provides useful information regarding the generation and distribution of primary and secondary electrons. However, since high energy photons are being employed for characterization of a photosensitive material, modification of the sample during the measurement is possible and this must be considered when investigating the chemical changes in the photoresist before and after exposure to EUV light.
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Submitted 30 May, 2024;
originally announced June 2024.
Microwave Properties of Ba-Substituted Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_3$ after Chemical-Mechanical Polishing
Authors:
Federica Luciano,
Lieve Teugels,
Sean McMitchell,
Giacomo Talmelli,
Anaïs Guerenneur,
Renzo Stheins,
Rudy Caluwaerts,
Thierry Conard,
Inge Vaesen,
Stefanie Sergeant,
Pol Van Dorpe,
Stefan De Gendt,
Matthijn Dekkers,
Johan Swerts,
Florin Ciubotaru,
Christoph Adelmann
Abstract:
We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP resid…
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We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP residuals. Measurements of the ferroelectric hysteresis after CMP indicated that the ferroelectric properties of BPZT were only weakly affected by CMP, while the piezoelectric d33 coefficient and the microwave permittivity were reduced slightly by 10%. This can be attributed to the formation of a thin dead layer at the BPZT surface. Moreover, the intrinsic dielectric permittivity at microwave frequencies between 1 and 25 GHz was not influenced by CMP, whereas the dead layer series capacitance decreased by 10%. The results indicate that the CMP process can be used to smoothen the BPZT surface without affecting the film properties strongly.
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Submitted 21 April, 2023;
originally announced April 2023.
