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Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets
Authors:
Sergi Cuesta,
Lou Denaix,
Florian Castioni,
Le Si Dang,
Eva Monroy
Abstract:
We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallograp…
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We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallographic planes of the AlGaN structure, allows the fabrication of flat and parallel facets without a degradation of the multilayered ensemble. The optical performance of the lasers display a major improved when using the two-step process for the definition of the cavity, in comparison to cavities fabricated by mechanical cleaving, with the lasing threshold under optical pumping being reduced to almost half.
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Submitted 30 March, 2022;
originally announced March 2022.
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Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission
Authors:
Sergi Cuesta,
Lou Denaix,
Le Si Dang,
Eva Monroy
Abstract:
In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss the effect of carrier localization and carrier diffusion on the optical performance. The implementation of graded index separate confinement heterostructures results in an improved carrier collection at the multi-quantum…
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In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss the effect of carrier localization and carrier diffusion on the optical performance. The implementation of graded index separate confinement heterostructures results in an improved carrier collection at the multi-quantum well, which facilitates population inversion and reduces the lasing threshold. However, this improvement is not correlated with the internal quantum efficiency of the spontaneous emission. We show that carrier localization at alloy inhomogeneities results in an enhancement of the radiative efficiency but does not reduce the laser threshold, more sensitive to the carrier injection efficiency.
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Submitted 22 September, 2021;
originally announced September 2021.
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AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers
Authors:
Sergi Cuesta,
Yoann Curé,
Fabrice Donatini,
Lou Denaix,
Edith Bellet-Amalric,
Catherine Bougerol,
Vincent Grenier,
Quang-Minh Thai,
Gilles Nogues,
Stephen T. Purcell,
Le Si Dang,
Eva Monroy
Abstract:
We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collec…
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We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collection is significantly improved using an asymmetric graded-index separate confinement heterostructure (GRINSCH). The graded layers avoid potential barriers induced by polarization differences in the heterostructure and serve as strain transition buffers which reduce the mosaicity of the active region and the linewidth of spontaneous emission.
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Submitted 16 March, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots
Authors:
D. O. Kundys,
P. Murzyn,
J. P. R. Wells,
A. I. Tartakovskii,
M. S. Skolnick,
Le Si Dang,
E. V. Lutsenko,
N. P. Tarasuk,
O. G. Lyublinskaya,
A. A. Toropov,
S. V. Ivanov
Abstract:
We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 4…
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We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.
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Submitted 17 January, 2014;
originally announced January 2014.
