Showing 1–9 of 9 results for author: Damilano, B

Vector beam generation from standing hollow GaN nanowire lasers on sapphire substrate

Authors: Masato Takiguchi, Sylvain Sergent, Benjamin Damilano, Stephane Vezian, Sebastien Chenot, Nicole Yazigi, Peter Heidt, Tai Tsuchizawa, Taiki Yoda, Hisashi Sumikura, Akihiko Shinya, Masaya Notomi

Abstract: We fabricated GaN based hollow nanowires standing upright on a sapphire substrate by the sublimation method and found that they exhibit laser oscillation at room temperature. These very long, hollow, nano-sized structures cannot be fabricated by other means. Furthermore, we determined the condition under which the fundamental mode is azimuthally polarized by investigating the dispersion of the hol… ▽ More We fabricated GaN based hollow nanowires standing upright on a sapphire substrate by the sublimation method and found that they exhibit laser oscillation at room temperature. These very long, hollow, nano-sized structures cannot be fabricated by other means. Furthermore, we determined the condition under which the fundamental mode is azimuthally polarized by investigating the dispersion of the hollow structure. Examination of the measured emission properties indicates that the hollow nanowire operates as a topological, vector-beam, light source. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Revealing topological phase in Pancharatnam-Berry metasurfaces using mesoscopic electrodynamics

Authors: Zhanjie Gao, Sandeep Golla, Rajath Sawant, Vladimir Osipov, Gauthier Briere, Stephane Vezian, Benjamin Damilano, Patrice Genevet, Konstantin E. Dorfman

Abstract: Relying on the local orientation of nanostructures, Pancharatnam-Berry metasurfaces are currently enabling a new generation of polarization-sensitive optical devices. A systematical mesoscopic description of topological metasurfaces is developed, providing a deeper understanding of the physical mechanisms leading to the polarization-dependent breaking of translational symmetry in contrast with pro… ▽ More Relying on the local orientation of nanostructures, Pancharatnam-Berry metasurfaces are currently enabling a new generation of polarization-sensitive optical devices. A systematical mesoscopic description of topological metasurfaces is developed, providing a deeper understanding of the physical mechanisms leading to the polarization-dependent breaking of translational symmetry in contrast with propagation phase effects. These theoretical results, along with interferometric experiments, contribute to the development of a solid theoretical framework for arbitrary polarization-dependent metasurfaces. △ Less

Submitted 26 February, 2021; originally announced February 2021.

Probing nanoscale thermal transport with cathodoluminescence thermometry

Authors: Kelly W. Mauser, Magdalena Solà-Garcia, Matthias Liebtrau, Benjamin Damilano, Pierre-Marie Coulon, Stéphane Vézian, Philip Shields, Sophie Meuret, Albert Polman

Abstract: Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of probes, ultra-thin sample requirements, or extensive f… ▽ More Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of probes, ultra-thin sample requirements, or extensive fabrication. Here, we overcome these limitations by extracting temperature from measurements of bandgap cathodoluminescence in GaN nanowires with spatial resolution limited by the electron cascade, and use this to determine thermal conductivities in the range of 19-68 W/m*K in three new ways. The electron beam acts simultaneously as a temperature probe and as a controlled delta-function-like heat source to measure thermal conductivities using steady-state methods, and we introduce a frequency-domain method using pulsed electron beam excitation. The different thermal conductivity measurements we explore agree within error where comparable. Our results provide novel methods of measuring thermal properties that allow for rapid, in-situ, high-resolution measurements of integrated circuits and semiconductor nanodevices, and open the door for electron-beam based nanoscale phonon transport studies. △ Less

Submitted 29 December, 2020; originally announced December 2020.

Analysis of low-threshold optically pumped III-nitride microdisk lasers

Authors: Farsane Tabataba-Vakili, Christelle Brimont, Blandine Alloing, Benjamin Damilano, Laetitia Doyennette, Thierry Guillet, Moustafa El Kurdi, Sébastien Chenot, Virginie Brändli, Eric Frayssinet, Jean-Yves Duboz, Fabrice Semond, Bruno Gayral, Philippe Boucaud

Abstract: Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate… ▽ More Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed. △ Less

Submitted 10 September, 2020; originally announced September 2020.

Journal ref: Appl. Phys. Lett. 117, 121103 (2020)

Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Authors: Farsane Tabataba-Vakili, Blandine Alloing, Benjamin Damilano, Hassen Souissi, Christelle Brimont, Laetitia Doyennette, Thierry Guillet, Xavier Checoury, Moustafa El Kurdi, Sébastien Chenot, Eric Frayssinet, Jean-Yves Duboz, Fabrice Semond, Bruno Gayral, Philippe Boucaud

Abstract: Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm un… ▽ More Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm under pulsed excitation, achieving low threshold energies of $0.14 ~\text{mJ/cm}^2$ per pulse (threshold peak powers of $35 ~\text{kW/cm}^2$). A large peak to background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength. △ Less

Submitted 28 July, 2020; v1 submitted 24 June, 2020; originally announced June 2020.

Journal ref: Opt. Lett. 45, 4276-4279 (2020)

Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Authors: Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont, Thierry Guillet, Stéphanie Rennesson, Benjamin Damilano, Eric Frayssinet, Jean-Yves Duboz, Xavier Checoury, Sébastien Sauvage, Moustafa El Kurdi, Fabrice Semond, Bruno Gayral, Philippe Boucaud

Abstract: On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase… ▽ More On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors. △ Less

Submitted 2 December, 2019; v1 submitted 21 October, 2019; originally announced October 2019.

Comments: 10 pages, 6 figures, supplementary: 6 pages, 8 figures

Journal ref: Sci Rep 9, 18095 (2019)

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Authors: Farsane Tabataba-Vakili, Stéphanie Rennesson, Benjamin Damilano, Eric Frayssinet, Jean-Yves Duboz, Fabrice Semond, Iannis Roland, Bruno Paulillo, Raffaele Colombelli, Moustafa El Kurdi, Xavier Checoury, Sébastien Sauvage, Laetitia Doyennette, Christelle Brimont, Thierry Guillet, Bruno Gayral, Philippe Boucaud

Abstract: Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a c… ▽ More Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm$^2$ output power density at 20 mA from such microrings with diameters of 30 to 50 $μ$m. The first steps towards achieving an integrated photonic circuit are demonstrated. △ Less

Submitted 5 April, 2019; originally announced April 2019.

Journal ref: Opt. Express 27, 11800-11808 (2019)

Blue Microlasers Integrated on a Photonic Platform on Silicon

Authors: Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont, Thierry Guillet, Stéphanie Rennesson, Eric Frayssinet, Benjamin Damilano, Jean-Yves Duboz, Fabrice Semond, Iannis Roland, Moustafa El Kurdi, Xavier Checoury, Sébastien Sauvage, Bruno Gayral, Philippe Boucaud

Abstract: The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grati… ▽ More The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grating couplers. A small gap size of less than 100 nm between the disk and the waveguide is required in the blue spectral range for optimal evanescent coupling. To avoid reabsorption of the microdisk emission in the waveguide, the quantum wells are etched away from the waveguide. Under continuous-wave excitation, loaded quality factors greater than 2000 are observed for the whispering gallery modes for devices with small gaps and large waveguide bending angles. Under pulsed excitation conditions, lasing is evidenced for 3 $μ$m diameter microdisks integrated in a full photonic circuit. We thus present a first demonstration of a III-nitride microlaser coupled to a nanophotonic circuit. △ Less

Submitted 5 April, 2019; originally announced April 2019.

Journal ref: ACS Photonics 2018, 5, 3643-3648

Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics

Authors: F. Chiaruttini, T. Guillet, C. Brimont, B. Jouault, P. Lefebvre, S. Chenot, Y. Cordier, B. Damilano, M. Vladimirova

Abstract: Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the… ▽ More Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature. △ Less

Submitted 8 February, 2019; originally announced February 2019.

Comments: 20 pages, 4 figures