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Gigahertz free-space electro-optic modulators based on Mie resonances
Authors:
Ileana-Cristina Benea-Chelmus,
Sydney Mason,
Maryna L. Meretska,
Delwin L. Elder,
Dmitry Kazakov,
Amirhassan Shams-Ansari,
Larry R. Dalton,
Federico Capasso
Abstract:
Electro-optic modulators from non-linear $χ^{(2)}$ materials are essential for sensing, metrology and telecommunications because they link the optical domain with the microwave domain. At present, most geometries are suited for fiber applications. In contrast, architectures that modulate directly free-space light at gigahertz (GHz) speeds have remained very challenging, despite their dire need for…
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Electro-optic modulators from non-linear $χ^{(2)}$ materials are essential for sensing, metrology and telecommunications because they link the optical domain with the microwave domain. At present, most geometries are suited for fiber applications. In contrast, architectures that modulate directly free-space light at gigahertz (GHz) speeds have remained very challenging, despite their dire need for active free-space optics, in diffractive computing or for optoelectronic feedback to free-space emitters. They are typically bulky or suffer from much reduced interaction lengths. Here, we employ an ultrathin array of sub-wavelength Mie resonators that support quasi bound states in the continuum (BIC) as a key mechanism to demonstrate electro-optic modulation of free-space light with high efficiency at GHz speeds. Our geometry relies on hybrid silicon-organic nanostructures that feature low loss ($Q = $ 550 at $λ_{res} = 1594$ nm) while being integrated with GHz-compatible coplanar waveguides. We maximize the electro-optic effect by using high-performance electro-optic molecules (whose electro-optic tensor we engineer in-device to exploit $r_{33} = 100$ pm/V) and by nanoscale optimization of the optical modes. We demonstrate both DC tuning and high speed modulation up to 5~GHz ($f_{EO,-3 dB} =3$ GHz) and shift the resonant frequency of the quasi-BIC by $Δλ_{res}=$11 nm, surpassing its linewidth. We contrast the properties of quasi-BIC modulators by studying also guided mode resonances that we tune by $Δλ_{res}=$20 nm. Our approach showcases the potential for ultrathin GHz-speed free-space electro-optic modulators.
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Submitted 7 August, 2021;
originally announced August 2021.
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Hybrid Electro-Optic Modulator Combining Silicon Photonic Slot Waveguides with High-k Radio-Frequency Slotlines
Authors:
Sandeep Ummethala,
Juned N. Kemal,
Ahmed S. Alam,
Matthias Lauermann,
Yasar Kutuvantavida,
Sree H. Nandam,
Lothar Hahn,
Delwin L. Elder,
Larry R. Dalton,
Thomas Zwick,
Sebastian Randel,
Wolfgang Freude,
Christian Koos
Abstract:
Electro-optic (EO) modulators rely on interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced by using dielectric slot-waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usua…
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Electro-optic (EO) modulators rely on interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced by using dielectric slot-waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usually applied through conductive regions in the direct vicinity of the optical waveguide. To avoid excessive optical loss, the conductivity of these regions is maintained at a moderate level, thus leading to inherent RC-limitations of the modulation bandwidth. In this paper, we show that these limitations can be overcome by extending the slot-waveguide concept to the modulating radio-frequency (RF) signal. Our device combines an RF slotline that relies on BaTiO3 as a high-k dielectric material with a conventional silicon photonic slot waveguide and a highly efficient organic EO cladding material. In a proof-of-concept experiment, we demonstrate a 1 mm-long Mach-Zehnder modulator that offers a 3 dB-bandwidth of 76 GHz and a 6 dB-bandwidth of 110 GHz along with a small π-voltage of 1.3 V (UπL = 1.3 V mm). To the best of our knowledge, this represents the largest EO bandwidth so far achieved with a silicon photonic modulator based on dielectric waveguides. We further demonstrate the viability of the device in a data transmission experiment using four-state pulse-amplitude modulation (PAM4) at line rates up to 200 Gbit/s. Our first-generation devices leave vast room for further improvement and may open an attractive route towards highly efficient silicon photonic modulators that combine sub-1 mm device lengths with sub-1 V drive voltages and modulation bandwidths of more than 100 GHz.
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Submitted 20 October, 2020;
originally announced November 2020.
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Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 GBd PAM4 Signaling With Sub-1 dB Phase-Shifter Loss
Authors:
Clemens Kieninger,
Christoph Füllner,
Heiner Zwickel,
Yasar Kutuvantavida,
Juned N. Kemal,
Carsten Eschenbaum,
Delwin L. Elder,
Larry R. Dalton,
Wolfgang Freude,
Sebastian Randel,
Christian Koos
Abstract:
We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $μ$m-long phase shifters feature a $π$-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as $aU_πL = 1.0\space\rm{VdB}$. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keyin…
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We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $μ$m-long phase shifters feature a $π$-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as $aU_πL = 1.0\space\rm{VdB}$. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keying (OOK) and four-level pulse-amplitude modulation (PAM4) signals at symbol rates of 100 GBd, resulting in line rates of up to 200 Gbit/s. Bit error ratios are below the threshold for hard-decision forward error correction (HD-FEC) with 7 % coding overhead, leading to net data rates of 187 Gbit/s. This is the highest PAM4 data rate ever achieved for a sub-1 mm silicon photonic MZM.
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Submitted 19 February, 2020;
originally announced February 2020.
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500 GHz plasmonic Mach-Zehnder modulator enabling sub-THz microwave photonics
Authors:
Maurizio Burla,
Claudia Hoessbacher,
Wolfgang Heni,
Christian Haffner,
Yuriy Fedoryshyn,
Dominik Werner,
Tatsuhiko Watanabe,
Hermann Massler,
Delwin Elder,
Larry Dalton,
Juerg Leuthold
Abstract:
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we exper…
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Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we experimentally demonstrate that plasmonic modulators do not trade off any performance parameter, featuring - at the same time - a short length of 10s of micrometers, record-high flat frequency response beyond 500 GHz, high power handling and high linearity, and we use them to create a sub-THz radio-over-fiber analog optical link. These devices have the potential to become a new tool in the general field of microwave photonics, making the sub-THz range accessible to e.g. 5G wireless communications, antenna remoting, IoT, sensing, and more.
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Submitted 31 December, 2018;
originally announced January 2019.
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Ultra-High Electro-Optic Activity Demonstrated in a Silicon-Organic Hybrid (SOH) Modulator
Authors:
Clemens Kieninger,
Yasar Kutuvantavida,
Delwin L. Elder,
Stefan Wolf,
Heiner Zwickel,
Matthias Blaicher,
Juned N. Kemal,
Matthias Lauermann,
Sebastian Randel,
Wolfgang Freude,
Larry R. Dalton,
Christian Koos
Abstract:
Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JR…
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Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV, leading to a voltage-length product of UπL = 320 Vμm - the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying (OOK) signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have major impact in the field of optical communications, but will also open new avenues towards ultra-fast photonic-electronic signal processing.
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Submitted 23 April, 2018; v1 submitted 19 September, 2017;
originally announced September 2017.
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Sub-Volt Silicon-Organic Electrooptic Modulator
Authors:
Ran Ding,
Tom Baehr-Jones,
Woo-Joong Kim,
Alexander Spott,
Jean-Marc Fedeli,
Su Huang,
Jingdong Luo,
Alex K. -Y. Jen,
Larry Dalton,
Michael Hochberg
Abstract:
Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2V CMOS electronics ; however, drive voltages in silicon-based MZIs cur…
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Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2V CMOS electronics ; however, drive voltages in silicon-based MZIs currently exceed 6.5V . Here we show an MZI modulator based on an electrooptic polymer-clad silicon slot waveguide, with a halfwave voltage of only 0.69V, and a bandwidth of 500 MHz. We also show that there are also paths to significantly improve both the bandwidth and drive voltage . Our silicon-organic modulator has an intrinsic power consumption less than 0.66 pJ/bit, nearly an order of magnitude improvement over the previous lowest energy silicon MZI .
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Submitted 13 September, 2010;
originally announced September 2010.
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Terahertz All-Optical Modulation in a Silicon-Polymer Hybrid System
Authors:
Michael Hochberg,
Tom Baehr-Jones,
Guangxi Wang,
Michael Shearn,
Katherine Harvard,
Jingdong Liu,
Baoquan Chen,
Zhengwei Shi,
Rhys Lawson,
Phil Sullivan,
Alex K. Y. Jen,
Larry Dalton,
Axel Scherer
Abstract:
Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer integrated waveguide device, based on the all-optical Kerr effect - the same ultrafast e…
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Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer integrated waveguide device, based on the all-optical Kerr effect - the same ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the ultrafast mechanism of this modulation functions at the optical frequency through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained in this device. By integrating optical polymers through evanescent coupling to high-mode-confinement silicon waveguides, we greatly increase the effective nonlinearity of the waveguide for cross-phase modulation. The combination of high mode confinement, multiple integrated optical components, and high nonlinearities produces all-optical ultrafast devices operating at continuous-wave power levels compatible with telecommunication systems. Although far from commercial radio frequency optical modulator standards in terms of extinction, these devices are a first step in development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.
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Submitted 28 June, 2006;
originally announced June 2006.
