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Engineering NV Centers via Hydrogen-Driven Defect Chemistry in CVD Diamonds for Quantum Applications: NVHx Dissociations into NV, Origin of 468nm Center, and Cause of Brown Coloration
Authors:
Mubashir Mansoor,
Kamil Czelej,
Sally Eaton-Magaña,
Mehya Mansoor,
Rümeysa Salci,
Maryam Mansoor,
Taryn Linzmeyer,
Yahya Sorkhe,
Kyaw S. Moe,
Ömer Özyildirim,
Kouki Kitajima,
Mehmet Ali Sarsil,
Taylan Erol,
Gökay Hamamci,
Onur Ergen,
Adnan Kurt,
Arya Andre Akhavan,
Zuhal Er,
Sergei Rubanov,
Nikolai M. Kazuchits,
Aisha Gokce,
Nick Davies,
Servet Timur,
Steven Prawer,
Alexander Zaitsev
, et al. (1 additional authors not shown)
Abstract:
Achieving high NV center conversion efficiency remains a key challenge in advancing diamond-based quantum technologies. The generally accepted mechanism for NV formation is that irradiation-induced vacancies become mobile during annealing and are trapped by substitutional nitrogen. However, the suggested mechanism does not consider the presence and role of hydrogen in the diamond and its influence…
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Achieving high NV center conversion efficiency remains a key challenge in advancing diamond-based quantum technologies. The generally accepted mechanism for NV formation is that irradiation-induced vacancies become mobile during annealing and are trapped by substitutional nitrogen. However, the suggested mechanism does not consider the presence and role of hydrogen in the diamond and its influence on the NV formation pathway. This is despite ab-initio calculations, which strongly suggest the formation of hydrogen-passivated NV centers during CVD diamond growth. Recent experimental observations showing a strong spatial correlation between NV centers, brown coloration, and the 468 nm luminescence center in as-grown CVD diamonds prompted us to investigate the atomistic origin of these phenomena in the presence of NxVHy-type complex defects. We used hybrid density functional theory DFT calculations and spectroscopic analysis of CVD diamonds grown with varying nitrogen content to investigate defect equilibria during growth. We identified the 468 nm center as the NVH- defect, a hydrogen-passivated NV center, and assigned the characteristic UV-VIS absorption bands at 270 360 and 520 nm to NxVHy complexes. Our findings reveal that hydrogen plays a central role in stabilizing these defects during growth. We further showed that NVHx complex defects dissociate into NV centers and interstitial hydrogen during post-growth irradiation and annealing, complementing vacancy trapping by substitutional nitrogen. These results provide a unified picture of the defect chemistry underlying brown coloration, 468 nm center, and NV formation in CVD diamonds, offering new insights for optimizing diamond synthesis and processing for quantum applications by taking advantage of hydrogens role and dissociation of NVHx complexes.
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Submitted 30 June, 2025;
originally announced July 2025.
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Can stress-induced changes in phonon frequencies of ZrSiO4 make it a potential IR spectroscopy-based pressure sensor?
Authors:
Mubashir Mansoor,
Mehya Mansoor,
Maryam Mansoor,
Zuhal Er,
Kamil Czelej,
Mustafa Urgen
Abstract:
Functional materials that can serve as high-pressure transducers are limited, making such sensor material sought after. It has been reported that hydrostatic pressures highly influence Raman shifts of ZrSiO4. Therefore, zirconium silicate has been suggested as a Raman spectroscopic pressure sensor. However, mass applications of a Raman-based sensor technology poses a wide range of challenges. We d…
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Functional materials that can serve as high-pressure transducers are limited, making such sensor material sought after. It has been reported that hydrostatic pressures highly influence Raman shifts of ZrSiO4. Therefore, zirconium silicate has been suggested as a Raman spectroscopic pressure sensor. However, mass applications of a Raman-based sensor technology poses a wide range of challenges. We demonstrate that ZrSiO4 also exhibits pressure-dependent infrared (IR) spectra. Furthermore, the IR peaks of ZrSiO4 are sensitive to shear stresses and non-hydrostatic pressures, making this material a unique sensor for determining a variety of mechanical stresses through IR spectroscopy.
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Submitted 30 January, 2022;
originally announced January 2022.
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Ab-initio calculation of point defect equilibria during heat treatment: Nitrogen, hydrogen, and silicon doped diamond
Authors:
Mubashir Mansoor,
Mehya Mansoor,
Maryam Mansoor,
Ammar Aksoy,
Sinem Nergiz Seyhan,
Betul Yildirim,
Ahmet Tahiri,
Nuri Solak,
Kursat Kazmanli,
Zuhal Er,
Kamil Czelej,
Mustafa Urgen
Abstract:
Point defects are responsible for a wide range of optoelectronic properties in materials, making it crucial to engineer their concentrations for novel materials design. However, considering the plethora of defects in co-doped semiconducting and dielectric materials and the dependence of defect formation energies on heat treatment parameters, process design based on an experimental trial and error…
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Point defects are responsible for a wide range of optoelectronic properties in materials, making it crucial to engineer their concentrations for novel materials design. However, considering the plethora of defects in co-doped semiconducting and dielectric materials and the dependence of defect formation energies on heat treatment parameters, process design based on an experimental trial and error approach is not an efficient strategy. This makes it necessary to explore computational pathways for predicting defect equilibria during heat treatments. The accumulated experimental knowledge on defect transformations in diamond is unparalleled. Therefore, diamond is an excellent material for benchmarking computational approaches. By considering nitrogen, hydrogen, and silicon doped diamond as a model system, we have investigated the pressure dependence of defect formation energies and calculated the defect equilibria during heat treatment of diamond through ab-initio calculations. We have plotted monolithic-Kröger-Vink diagrams for various defects, representing defect concentrations based on process parameters, such as temperature and partial pressure of gases used during heat treatments of diamond. The method demonstrated predicts the majority of experimental data, such as nitrogen aggregation path leading towards the formation of the B center, annealing of the B, H3, N3, and NVHx centers at ultra high temperatures, the thermal stability of the SiV center, and temperature dependence of NV concentration. We demonstrate the possibility of designing heat treatments for a wide range of semiconducting and dielectric materials by using a relatively inexpensive yet robust first principles approach, significantly accelerating defect engineering and high-throughput novel materials design.
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Submitted 22 November, 2021;
originally announced November 2021.
