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Auxiliary Field Quantum Monte Carlo for Dilute Neutrons on the Lattice
Authors:
Ryan Curry,
Jayani Dissanayake,
Stefano Gandolfi,
Alexandros Gezerlis
Abstract:
We employ constrained path Auxiliary Field Quantum Monte Carlo (AFQMC) in the pursuit of studying physical nuclear systems using a lattice formalism. Since AFQMC has been widely used in the study of condensed-matter systems such as the Hubbard model, we benchmark our method against published results for both one- and two-dimensional Hubbard model calculations. We then turn our attention to cold-at…
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We employ constrained path Auxiliary Field Quantum Monte Carlo (AFQMC) in the pursuit of studying physical nuclear systems using a lattice formalism. Since AFQMC has been widely used in the study of condensed-matter systems such as the Hubbard model, we benchmark our method against published results for both one- and two-dimensional Hubbard model calculations. We then turn our attention to cold-atomic and nuclear systems. We use an onsite contact interaction that can be tuned in order to reproduce the known scattering length and effective range of a given interaction. Developing this machinery allows us to extend our calculations to study nuclear systems within a lattice formalism. We perform initial calculations for a range of nuclear systems from two- to few-body neutron systems.
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Submitted 10 April, 2024; v1 submitted 2 October, 2023;
originally announced October 2023.
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Highly ${ }^{28} \mathrm{Si}$ Enriched Silicon by Localised Focused Ion Beam Implantation
Authors:
Ravi Acharya,
Maddison Coke,
Mason Adshead,
Kexue Li,
Barat Achinuq,
Rongsheng Cai,
A. Baset Gholizadeh,
Janet Jacobs,
Jessica L. Boland,
Sarah J. Haigh,
Katie L. Moore,
David N. Jamieson,
Richard J. Curry
Abstract:
Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope ${ }^{29} \mathrm{Si}$ which has a non-zero nuclear spin. This work presents a method for the depletion of ${ }^{29} \mathrm{Si}$ in localised volumes of natur…
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Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope ${ }^{29} \mathrm{Si}$ which has a non-zero nuclear spin. This work presents a method for the depletion of ${ }^{29} \mathrm{Si}$ in localised volumes of natural silicon wafers by irradiation using a 45 keV ${ }^{28} \mathrm{Si}$ focused ion beam with fluences above $1 \times 10^{19} \, \mathrm{ions} \, \mathrm{cm}^{-2}$. Nanoscale secondary ion mass spectrometry analysis of the irradiated volumes shows unprecedented quality enriched silicon that reaches a minimal residual ${ }^{29} \mathrm{Si}$ value of 2.3 $\pm$ 0.7 ppm and with residual C and O comparable to the background concentration in the unimplanted wafer. Transmission electron microscopy lattice images confirm the solid phase epitaxial re-crystallization of the as-implanted amorphous enriched volume extending over 200 nm in depth upon annealing. The ease of fabrication, requiring only commercially available natural silicon wafers and ion sources, opens the possibility for co-integration of qubits in localised highly enriched volumes with control circuitry in the surrounding natural silicon for large-scale devices.
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Submitted 23 August, 2023;
originally announced August 2023.
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Second-Order Perturbation Theory in Continuum Quantum Monte Carlo Calculations
Authors:
Ryan Curry,
Joel E. Lynn,
Kevin E. Schmidt,
Alexandros Gezerlis
Abstract:
We report on the first results for the second-order perturbation theory correction to the ground-state energy of a nuclear many-body system in a continuum quantum Monte Carlo calculation. Second-order (and higher) perturbative corrections are notoriously difficult to compute in most ab initio many-body methods, where the focus is usually on obtaining the ground-state energy. By mapping our calcula…
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We report on the first results for the second-order perturbation theory correction to the ground-state energy of a nuclear many-body system in a continuum quantum Monte Carlo calculation. Second-order (and higher) perturbative corrections are notoriously difficult to compute in most ab initio many-body methods, where the focus is usually on obtaining the ground-state energy. By mapping our calculation of the second-order energy correction to an evolution in imaginary time using the diffusion Monte Carlo method, we are able to calculate these nuclear corrections for the first time. After benchmarking our method in the few-body sector, we explore the effect of charge-independence-breaking terms in the nuclear Hamiltonian. We then employ that approach to investigate the many-body, perturbative, order-by-order convergence that is fundamental in modern theories of the nucleon-nucleon interaction derived from chiral effective field theory. We find cutoff-dependent perturbativeness between potentials at higher chiral order and also that the difference between leading order and next-to-leading order potentials is nonperturbative; both of these results have important implications for future nuclear many-body calculations. Our approach is quite general and promises to be of wide applicability.
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Submitted 8 November, 2023; v1 submitted 14 February, 2023;
originally announced February 2023.
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Compact spectrometer based on disordered multi-mode interferometer
Authors:
Ankit Poudel,
Pravin Bhattarai,
Rijan Maharjan,
Richard J Curry,
Iain F Crowe,
Ashim Dhakal
Abstract:
We demonstrate a compact (40 $μ$m $\times$ 260 $μ$m) spectrometer based on multimode interference aided by scattering of light from random SiO$_2$-filled hole arrays on a silicon-on-insulator platform. We characterize the performance of the spectrometer for wavelengths around 1310 nm, and report that the spectrometer can reconstruct a broadband $\sim$ 67 nm source, as well as Lorentzian probes of…
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We demonstrate a compact (40 $μ$m $\times$ 260 $μ$m) spectrometer based on multimode interference aided by scattering of light from random SiO$_2$-filled hole arrays on a silicon-on-insulator platform. We characterize the performance of the spectrometer for wavelengths around 1310 nm, and report that the spectrometer can reconstruct a broadband $\sim$ 67 nm source, as well as Lorentzian probes of $\sim$ 1 nm bandwidth. This compact nanometer level resolution spectrometer can be fabricated at a low cost for lab-on-a-chip sensing and imaging applications.
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Submitted 22 September, 2022;
originally announced September 2022.
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Power and spectral characterization of photonic integrated circuit based axicon like lens
Authors:
Rijan Maharjan,
Sanket Bohora,
Pravin Bhattarai,
Iain Crowe,
Richard J. Curry,
Richard Hogg,
David Childs,
Ashim Dhakal
Abstract:
We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration…
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We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration depth in the gratings from $\approx$5 $μ$m to $\approx$55 $μ$m. We characterize the device's performance by coupling 1300$\pm$50 nm swept source laser in to the chip from the axicon, and measuring the out-coupled light from a grating coupler. Further, we also present the implementation of balanced homodyne detection method for the spectral characterization of the device and show that the position of the output lobe of the axicon does not change significantly with wavelength.
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Submitted 12 August, 2020;
originally announced August 2020.
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Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass
Authors:
M. Hughes,
R. J. Curry,
H. Rutt,
D. Hewak
Abstract:
Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width half maximum (FWHM) of 500 nm, is observed peaking at 1500 nm when exciting at 514, 808 and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 us a…
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Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width half maximum (FWHM) of 500 nm, is observed peaking at 1500 nm when exciting at 514, 808 and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 us and 4 % respectively. From the available spectroscopic data we propose the vanadium ions valence to be 3+ and be in tetrahedral coordination The results indicate potential for development of a laser or optical amplifier based on V:GLS.
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Submitted 26 November, 2014;
originally announced November 2014.
