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Low-Loss and Low-Power Silicon Ring Based WDM 32$\times$100 GHz Filter Enabled by a Novel Bend Design
Authors:
Qingzhong Deng,
Ahmed H. El-Saeed,
Alaa Elshazly,
Guy Lepage,
Chiara Marchese,
Pieter Neutens,
Hakim Kobbi,
Rafal Magdziak,
Jeroen De Coster,
Javad Rahimi Vaskasi,
Minkyu Kim,
Yeyu Tong,
Neha Singh,
Marko Ersek Filipcic,
Pol Van Dorpe,
Kristof Croes,
Maumita Chakrabarti,
Dimitrios Velenis,
Peter De Heyn,
Peter Verheyen,
Philippe Absil,
Filippo Ferraro,
Yoojin Ban,
Joris Van Campenhout
Abstract:
Ring resonators are crucial in silicon photonics for various applications, but conventional designs face performance trade-offs. Here a third-order polynomial interconnected circular (TOPIC) bend is proposed to revolutionize the ring designs fundamentally. The TOPIC bend has a unique feature of continuous curvature and curvature derivative, which is theoretically derived to be essential for wavegu…
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Ring resonators are crucial in silicon photonics for various applications, but conventional designs face performance trade-offs. Here a third-order polynomial interconnected circular (TOPIC) bend is proposed to revolutionize the ring designs fundamentally. The TOPIC bend has a unique feature of continuous curvature and curvature derivative, which is theoretically derived to be essential for waveguide loss optimization. With the TOPIC bend, the silicon ring resonators demonstrated here have achieved three records to the best of our knowledge: the smallest radius (0.7 $\mathrm{μm}$) for silicon rings resonating with single guided mode, the lowest thermal tuning power (5.85 mW/$π$) for silicon rings with FSR $\geq$3.2 THz, and the first silicon ring-based WDM 32$\times$100 GHz filter. The filter has doubled the channel amount compared to the state of the art, and meanwhile achieved low insertion loss (1.91 $\pm$ 0.28 dB) and low tuning power (283 GHz/mW). Moreover, the TOPIC bend is not limited to ring applications, it can also be used to create bends with an arbitrary angle, with the advantages of ultra-compact radius and heater integration, which are expected to replace all circular bends in integrated photonics, greatly reducing system size and power consumption.
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Submitted 22 November, 2024;
originally announced November 2024.
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Selecting Alternative Metals for Advanced Interconnects
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Benoit Van Troeye,
Alicja Leśniewska,
Olalla Varela Pedreira,
Herman Oprins,
Gilles Delie,
Claudia Fleischmann,
Lizzie Boakes,
Cédric Rolin,
Lars-Åke Ragnarsson,
Kristof Croes,
Seongho Park,
Johan Swerts,
Geoffrey Pourtois,
Zsolt Tőkei,
Christoph Adelmann
Abstract:
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions…
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Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions approach the 10 nm scale, the limitations of conventional Cu dual-damascene metallization are becoming increasingly difficult to overcome, spurring over a decade of focused research into alternative metallization schemes. The selection of alternative metals is a highly complex process, requiring consideration of multiple criteria, including resistivity at reduced dimensions, reliability, thermal performance, process technology readiness, and sustainability. This tutorial introduces the fundamental criteria for benchmarking and selecting alternative metals and reviews the current state of the art in this field. It covers materials nearing adoption in high-volume manufacturing, materials currently under active research, and potential future directions for fundamental study. While early alternatives to Cu metallization have recently been introduced in commercial CMOS devices, the search for the optimal interconnect metal remains ongoing.
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Submitted 1 October, 2024; v1 submitted 13 June, 2024;
originally announced June 2024.
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32x100 GHz WDM filter based on ultra-compact silicon rings with a high thermal tuning efficiency of 5.85 mW/pi
Authors:
Qingzhong Deng,
Ahmed H. El-Saeed,
Alaa Elshazly,
Guy Lepage,
Chiara Marchese,
Hakim Kobbi,
Rafal Magdziak,
Jeroen De Coster,
Neha Singh,
Marko Ersek Filipcic,
Kristof Croes,
Dimitrios Velenis,
Maumita Chakrabarti,
Peter De Heyn,
Peter Verheyen,
Philippe Absil,
Filippo Ferraro,
Yoojin Ban,
Joris Van Campenhout
Abstract:
To the best of our knowledge, this paper has achieved the lowest thermal tuning power (5.85 mW/pi) for silicon rings with FSR>=3.2 THz, and the first silicon ring-based WDM-32x100 GHz filter.
To the best of our knowledge, this paper has achieved the lowest thermal tuning power (5.85 mW/pi) for silicon rings with FSR>=3.2 THz, and the first silicon ring-based WDM-32x100 GHz filter.
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Submitted 7 November, 2023;
originally announced November 2023.
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SOT-MRAM 300mm integration for low power and ultrafast embedded memories
Authors:
K. Garello,
F. Yasin,
S. Couet,
L. Souriau,
J. Swerts,
S. Rao,
S. Van Beek,
W. Kim,
E. Liu,
S. Kundu,
D. Tsvetanova,
N. Jossart,
K. Croes,
E. Grimaldi,
M. Baumgartner,
D. Crotti,
A. Furnémont,
P. Gambardella,
G. S. Kar
Abstract:
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.
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Submitted 22 October, 2018;
originally announced October 2018.
