-
Variability in Resistive Memories
Authors:
Juan B. Roldán,
Enrique Miranda,
David Maldonado,
Alexey N. Mikhaylov,
Nikolay V. Agudov,
Alexander A. Dubkov,
Maria N. Koryazhkina,
Mireia B. González,
Marco A. Villena,
Samuel Poblador,
Mercedes Saludes-Tapia,
Rodrigo Picos,
Francisco Jiménez-Molinos,
Stavros G. Stavrinides,
Emili Salvador,
Francisco J. Alonso,
Francesca Campabadal,
Bernardo Spagnolo,
Mario Lanza,
Leon O. Chua
Abstract:
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial production. However, the most important hurdle to p…
▽ More
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial production. However, the most important hurdle to progress in their development is the so-called cycle-to-cycle variability, which is inherently rooted in the resistive switching mechanism behind the operational principle of these devices. In order to achieve the whole picture, variability must be assessed from different viewpoints going from the experimental characterization to the adequation of modeling and simulation techniques. Herein, special emphasis is put on the modeling part because the accurate representation of the phenomenon is critical for circuit designers. In this respect, a number of approaches are used to the date: stochastic, behavioral, mesoscopic..., each of them covering particular aspects of the electron and ion transport mechanisms occurring within the switching material. These subjects are dealt with in this review, with the aim of presenting the most recent advancements in the treatment of variability in resistive memories.
△ Less
Submitted 19 November, 2024;
originally announced November 2024.
-
Spintronic memristors for computing
Authors:
Qiming Shao,
Zhongrui Wang,
Yan Zhou,
Shunsuke Fukami,
Damien Querlioz,
Leon O. Chua
Abstract:
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware system…
▽ More
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware systems to handle data-centric tasks. Spintronic nanodevices are promising choices as they are high-speed, low-power, highly scalable, robust, and capable of constructing dynamic complex systems. In this Review, we survey spintronic devices from a memristor point of view. We introduce spintronic memristors based on magnetic tunnel junctions, nanomagnet ensemble, domain walls, topological spin textures, and spin waves, which represent dramatically different state spaces. They can exhibit steady, oscillatory, stochastic, and chaotic trajectories in their state spaces, which have been exploited for in-memory logic, neuromorphic computing, stochastic and chaos computing. Finally, we discuss challenges and trends in realizing large-scale spintronic memristive systems for practical applications.
△ Less
Submitted 14 March, 2025; v1 submitted 6 December, 2021;
originally announced December 2021.
-
All-Optically Controlled Memristor
Authors:
Lingxiang Hu,
Jing Yang,
Jingrui Wang,
Peihong Cheng,
Leon O. Chua,
Fei Zhuge
Abstract:
Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is generally a two-terminal electronic element with conductance that varies nonlinearly with external electric stimuli and can be remembered when the electric power i…
▽ More
Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is generally a two-terminal electronic element with conductance that varies nonlinearly with external electric stimuli and can be remembered when the electric power is turned off. As an alternative, light can be used to tune the memconductance and endow a memristor with a combination of the advantages of both photonics and electronics. Both increases and decreases in optically induced memconductance have been realized in different memristors; however, the reversible tuning of memconductance with light in the same device remains a considerable challenge that severely restricts the development of optoelectronic memristors. Here we describe an all-optically controlled (AOC) analog memristor with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. Our memristor is based on the relatively mature semiconductor material InGaZnO (IGZO) and a memconductance tuning mechanism of light-induced electron trapping and detrapping. We demonstrate that spike-timing-dependent plasticity (STDP) learning can be realized in our device, indicating its potential applications in AOC spiking neural networks (SNNs) for highly efficient optoelectronic neuromorphic computing.
△ Less
Submitted 17 April, 2020;
originally announced April 2020.
