-
Nonequilibrium magnonic thermal transport engineering
Authors:
Takamasa Hirai,
Toshiaki Morita,
Subrata Biswas,
Jun Uzuhashi,
Takashi Yagi,
Yuichiro Yamashita,
Varun Kushwaha Kumar,
Fuya Makino,
Rajkumar Modak,
Yuya Sakuraba,
Tadakatsu Ohkubo,
Rulei Guo,
Bin Xu,
Junichiro Shiomi,
Daichi Chiba,
Ken-ichi Uchida
Abstract:
Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport properties including electrical conductivity and thermoelectric conversion coefficients have material-specific values, it is known that thermal conductivity can be modulated artificially via phonon engineering techniques. Here,…
▽ More
Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport properties including electrical conductivity and thermoelectric conversion coefficients have material-specific values, it is known that thermal conductivity can be modulated artificially via phonon engineering techniques. Here, we demonstrate another way of artificially modulating the heat conduction in solids: magnonic thermal transport engineering. The time-domain thermoreflectance measurements using ferromagnetic metal/insulator junction systems reveal that the thermal conductivity of the ferromagnetic metals and interfacial thermal conductance vary significantly depending on the spatial distribution of nonequilibrium spin currents. Systematic measurements of the thermal transport properties with changing the boundary conditions for spin currents show that the observed thermal transport modulation stems from magnon origin. This observation unveils that magnons significantly contribute to the heat conduction even in ferromagnetic metals at room temperature, upsetting the conventional wisdom that the thermal conductivity mediated by magnons is very small in metals except at low temperatures. The magnonic thermal transport engineering offers a new principle and method for active thermal management.
△ Less
Submitted 6 March, 2024;
originally announced March 2024.
-
Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers
Authors:
Kosuke Takiguchi,
Le Duc Anh,
Takahiro Chiba,
Tomohiro Koyama,
Daichi Chiba,
Masaaki Tanaka
Abstract:
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials…
▽ More
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR) (~80% at 14 T). This PMR is two orders of magnitude larger than the MR observed in NM/FM bilayers reported to date, and its magnitude can be controlled by a gate voltage. These results are explained by the penetration of the InAs two-dimensional-electron wavefunction into (Ga,Fe)Sb. The ability to strongly modulate the NM channel current by both electrical and magnetic gating represents a new concept of magnetic-gating spin transistors.
△ Less
Submitted 27 December, 2018;
originally announced December 2018.
-
Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor
Authors:
Toshiki Kanaki,
Hiroki Yamasaki,
Tomohiro Koyama,
Daichi Chiba,
Shinobu Ohya,
Masaaki Tanaka
Abstract:
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current IDS modulation by a gate-source voltage VGS with a modulation ratio up to 130%, which is the largest value that has…
▽ More
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current IDS modulation by a gate-source voltage VGS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large IDS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that IDS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by VGS. This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.
△ Less
Submitted 5 January, 2018;
originally announced January 2018.
